scholarly journals Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

2022 ◽  
Author(s):  
siddik yarman
Keyword(s):  
Numerical Procedure ◽  
Rf Power ◽  
Power Performance ◽  
Power Transistor ◽  
Gain Bandwidth ◽  
Active Device ◽  
Power Added Efficiency ◽  
Real Frequency ◽  
The Given ◽  
Load Pull

selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.

scholarly journals Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

2022 ◽  
Author(s):  
siddik yarman
Keyword(s):  
Numerical Procedure ◽  
Rf Power ◽  
Power Performance ◽  
Power Transistor ◽  
Gain Bandwidth ◽  
Active Device ◽  
Power Added Efficiency ◽  
Real Frequency ◽  
The Given ◽  
Load Pull

selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.

RF Power Performance Evaluation of Surface Channel Diamond MESFET

2009 ◽  
Vol 1203 ◽  
Author(s):  
Maria Cristina Rossi ◽  
Paolo Calvani ◽  
Gennaro Conte ◽  
Vittorio Camarchia ◽  
Federica Cappelluti ◽  
...  
Keyword(s):  
Output Power ◽  
Threshold Voltage ◽  
Polycrystalline Diamond ◽  
Drain Current ◽  
Rf Power ◽  
Power Performance ◽  
Power Devices ◽  
Large Signal ◽  
Device Structure ◽  
Power Added Efficiency

AbstractLarge-signal radiofrequency performances of surface channel diamond MESFET fabricated on hydrogenated polycrystalline diamond are investigated. The adopted device structure is a typical coplanar two-finger gate layout, characterized in DC by an accumulation-like behavior with threshold voltage Vt ∼ 0-0.5 V and maximum DC drain current of 120 mA/mm. The best radiofrequency performances (in terms of fT and fmax) were obtained close to the threshold voltage. Realized devices are analyzed in standard class A operation, at an operating frequency of 2 GHz. The MESFET devices show a linear power gain of 8 dB and approximately 0.2 Wmm RF output power with 22% power added efficiency. An output power density of about 0.8 W/mm can be then extrapolated at 1 GHz, showing the potential of surface channel MESFET technology on polycrystalline diamond for microwave power devices.

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 147-155 ◽  
Author(s):  
P.C. Chao ◽  
Kanin Chu ◽  
Jose Diaz ◽  
Carlton Creamer ◽  
Scott Sweetland ◽  
...  
Keyword(s):  
Low Temperature ◽  
Continuous Wave ◽  
Electrical Performance ◽  
Limiting Factor ◽  
Rf Power ◽  
Power Performance ◽  
Electronic Warfare ◽  
Power Added Efficiency ◽  
New Device ◽  
Diamond Substrate

ABSTRACTA new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. Thermal measurements showed that the GaN-on-diamond devices maintained equivalent or lower junction temperatures than their GaN-on-SiC counterparts while delivering more than three-times higher RF power within the same active area. Such results demonstrate that the GaN device transfer process is capable of preserving intrinsic transistor electrical performance while taking advantage of the excellent thermal properties of diamond substrates. Preliminary step-stress and room-temperature, steady-state life testing shows that the low-temperature bonded GaN-on-diamond device has no inherently reliability limiting factor. GaN-on-diamond is ideally suited to wideband electronic warfare (EW) power amplifiers as they are the most thermally challenging due to continuous wave (CW) operation and the reduced power-added efficiency obtained with ultra-wide bandwidth circuit implementations.

scholarly journals Two matrix methods for solution of nonlinear and linear Lane-Emden type equations with mixed condition by operational matrix

2015 ◽  
Vol 4 (3) ◽  
pp. 420 ◽  
Author(s):  
Behrooz Basirat ◽  
Mohammad Amin Shahdadi
Keyword(s):  
Bernstein Polynomials ◽  
Operational Matrix ◽  
Numerical Procedure ◽  
Operational Matrices ◽  
Algebraic Equations ◽  
Mixed Condition ◽  
Matrix Methods ◽  
Numerical Examples ◽  
Linear Algebraic Equations ◽  
The Given

<p>The aim of this article is to present an efficient numerical procedure for solving Lane-Emden type equations. We present two practical matrix method for solving Lane-Emden type equations with mixed conditions by Bernstein polynomials operational matrices (BPOMs) on interval [<em>a; b</em>]. This methods transforms Lane-Emden type equations and the given conditions into matrix equation which corresponds to a system of linear algebraic equations. We also give some numerical examples to demonstrate the efficiency and validity of the operational matrices for solving Lane-Emden type equations (LEEs).</p>

RF power performance evaluation of surface channel diamond MESFETs

2011 ◽  
Vol 55 (1) ◽  
pp. 19-24 ◽  
Author(s):  
V. Camarchia ◽  
F. Cappelluti ◽  
G. Ghione ◽  
M.C. Rossi ◽  
P. Calvani ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Rf Power ◽  
Power Performance

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Rf Power ◽  
Power Performance ◽  
Future Directions ◽  
Recent Developments ◽  
Gan Hemts ◽  
State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

AlN/GaN MISHEMTs on Si with in-situ SiN as gate dielectric for power amplifiers in mobile SoCs

2021 ◽  
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Wenrui Hu ◽  
Yu Gao ◽  
Hui Teng Tan ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Gate Dielectric ◽  
Rf Power Amplifiers ◽  
Maximum Output ◽  
High Electron ◽  
Rf Power ◽  
Power Added Efficiency ◽  
5 Ghz ◽  
Mobile Soc

Abstract AlN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in-situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a mobile SoC-compatible supply voltage of Vd = 3.5 V/5 V, the 90-nm gate-length AlN/GaN MISHEMTs showed a maximum power-added efficiency (PAE) of 62%/58%, a maximum output power density (Poutmax) of 0.44 W/mm/0.84 W/mm and a linear gain of 20 dB/19 dB at the frequency of 5 GHz. These results suggest that the in-situ-SiN/AlN/GaN-on-Si MISHEMTs are promising for RF power amplifiers in 5G mobile SoC applications.

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Circuit World ◽  
2020 ◽  
Vol 46 (4) ◽  
pp. 243-248
Author(s):  
Min Liu ◽  
Panpan Xu ◽  
Jincan Zhang ◽  
Bo Liu ◽  
Liwen Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Common Source ◽  
Power Performance ◽  
Matching Network ◽  
Content Type ◽  
Power Added Efficiency ◽  
Saturated Output Power

Purpose Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications. Design/methodology/approach A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks. Findings By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz. Originality/value The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

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