scholarly journals Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89

2021 ◽  
Vol 2086 (1) ◽  
pp. 012057
Author(s):  
D A Knyaginin ◽  
E A Kulchenkov ◽  
S B Rybalka ◽  
A A Demidov
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Input Output ◽  
Power Transistor ◽  
Spice Model ◽  
Type Transistor

Abstract In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.

1200V 20A SiC BJTs operating at 250°C

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000091-000097
Author(s):  
Anders Lindgren ◽  
Martin Domeij ◽  
Tomas Hjort
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Qualitative Agreement ◽  
Series Resistance ◽  
Switching Behavior ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Spice Model ◽  
High Temperature Operation ◽  
Made In

Silicon carbide (SiC) bipolar junction transistors (BJTs) are normally-off devices which can block high voltages at high temperature operation. The SiC BJTs can be switched very fast with low losses [2] compared to BJT's made in silicon (Si), and can be operated at temperatures up to and above 250 °C. Vertical 1200V 20A rated high temperature capable NPN SiC BJTs were fabricated and packaged in a high-temperature capable metal package of the type TO-258. The transistors were characterized both statically and in terms of switching. A SPICE model was developed for the transistors, including the parasitic capacitances of the internal pn-junctions, as well as temperature dependence of the current gain and the collector series resistance. Switching measurements were performed showing VCE voltage rise- and fall-times in the range of 20–30 ns. The switching behavior is in qualitative agreement with SPICE simulations.

1200 V 6 A High Temperature SiC BJTs

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000160-000166 ◽  
Author(s):  
Anders Lindgren ◽  
Martin Domeij
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Qualitative Agreement ◽  
Series Resistance ◽  
Switching Behavior ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Spice Model ◽  
High Temperature Operation ◽  
Made In

Silicon carbide (SiC) bipolar junction transistors (BJTs) are normally-off devices which can block high voltages at high temperature operation. The SiC BJTs can be switched very fast with low losses [2] compared to BJT's made in silicon (Si), and can be operated at temperatures up to and above 250 °C. Vertical 1200V 6A rated NPN SiC BJTs were fabricated and packaged in a high-temperature capable metal package of the type TO-258. The transistors were characterized both statically and in terms of switching. A SPICE model was developed for the transistors, including the parasitic capacitances of the internal pn-junctions, as well as temperature dependence of the current gain and the collector series resistance. Switching measurements were performed showing VCE voltage rise- and fall-times in the range of 20 ns. The switching behavior is in qualitative agreement with SPICE simulations.

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 1025-1028 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Drop ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Forward Voltage ◽  
Collector Voltage ◽  
Forward Voltage Drop ◽  
Chip Size ◽  
Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

The Influence of Dopant Type on Polysilicon Grain Growth and Solid Phase Epitaxial Regrowth

1997 ◽  
Vol 3 (S2) ◽  
pp. 477-478
Author(s):  
M.G. Shlepr ◽  
G.A. Schrantz ◽  
A.L. Rivoli ◽  
G. Bajor
Keyword(s):  
Grain Growth ◽  
Solid Phase ◽  
Convergent Beam Electron Diffraction ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Process Technology ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Polysilicon Emitters ◽  
Convergent Beam

A recent process technology to manufacture bipolar junction transistors utilizes polysilicon emitters. Polysilicon is deposited, appropriately doped to form both NPN and PNP transistors, and exposed to temperatures that result in grain growth. Since polysilicon is in contact with Si( 100) at the emitter, base, and collector (Fig. 1), solid phase epitaxial regrowth might also occur. Production runs with this structure occasionally produce transistors with low current gain. High and low gain NPN and PNP transistors were characterized by transmission electron microscopy.Vertical sections through NPN/PNP transistor arrays were made by the wedge technique, low-angle ion milled to electron-transparency, and viewed at 200 KV. The grain size of the polysilicon on oxide was recorded and estimated. The extent of epitaxial regrowth was quantified for each of the Si (100) contact areas. Convergent Beam Electron Diffraction (CBED) was used to confirm the orientation of the presumed regrown polysilicon.

Physical processes of current gain in InAs bipolar junction transistors

2004 ◽  
Vol 20 (3-4) ◽  
pp. 511-514 ◽  
Author(s):  
X. Wu ◽  
K.L. Averett ◽  
S. Maimon ◽  
M.W. Koch ◽  
G.W. Wicks
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Physical Processes

Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process

2012 ◽  
Vol 717-720 ◽  
pp. 1117-1122 ◽  
Author(s):  
Hiroki Miyake ◽  
Tsunenobu Kimoto ◽  
Jun Suda
Keyword(s):  
Room Temperature ◽  
Surface Passivation ◽  
Deep Level ◽  
Reduction Process ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Previous Record ◽  
Maximum Current ◽  
Level Reduction

We demonstrate 4H-SiC bipolar junction transistors (BJTs) with an enhanced current gain over 250. High current gain was achieved by utilizing optimized device geometry as well as optimized surface passivation, continuous epitaxial growth of the emitter-base junction, combined with an intentional deep-level-reduction process based on thermal oxidation to improve the lifetime in p-SiC base. We achieved a maximum current gain (β) of 257 at room temperature and 127 at 250°C for 4H-SiC BJTs fabricated on the (0001)Si-face. The gain of 257 is twice as large as the previous record gain. We also demonstrate BJTs on the (000-1)C-face that showed the highest β of 439 among the SiC BJTs ever reported.

GAIN DEGRADATION AND ENHANCED LOW-DOSE-RATE SENSITIVITY IN BIPOLAR JUNCTION TRANSISTORS

2004 ◽  
Vol 14 (02) ◽  
pp. 503-517 ◽  
Author(s):  
R. D. SCHRIMPF
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Surface Recombination ◽  
Rate Sensitivity ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Base Current ◽  
Low Dose Rate ◽  
Two Factors ◽  
Recombination Current

The current gain of irradiated bipolar junction transistors decreases due to increased recombination current in the emitter-base depletion region and the neutral base. This recombination current depends on the interaction of two factors: (1) decreased minority-carrier lifetime at the Si / SiO 2 interface or in the bulk Si and (2) changes in surface potential caused by charge in the oxide. In npn transistors, these two factors both result in increased base current, while in pnp devices, positive charge in the oxide moderates the increase in base current due to surface recombination. In some technologies, the amount of degradation that occurs at a given total dose increases as the dose rate decreases. This enhanced low-dose-rate sensitivity results from space-charge effects produced by slowly transporting holes and protons in the oxide that covers the emitterbase junction.

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