How to distinguish between opposite faces of ana-plane sapphire wafer

A method to distinguish between two symmetrically equivalent opposite (11{\overline 2}0) and ({\overline 1}{\overline 1}20) faces of ana-plane sapphire wafer is described. It is shown that use of conventional X-ray diffraction analysis makes it possible to determine the `sign' of the sapphireaface in contrast to the `sign' of thec,morrfaces. Correct determination of thea-plane wafer orientation is important for further growth and processing of heteroepitaxial structures.

Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

The texture of epitaxial ferroelectric BaTiO3 films on buffered silicon is controlled by selection of the wafer orientation and buffer layers.

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

Reliability of gate oxide for trench-gate MOSFET was improved by deposited oxide film with uniform thickness and high-temperature annealing after trench etching. Optimum wafer orientation and trench direction for the trench gate was investigated, and the gate oxide on (11-20) plane of carbon face exhibited the longest lifetime. Influences by the roughness of sidewall and the radius of trench corner are discussed.