Structural, morphological and electrical properties of graphene oxides obtained by Hummers, Tour and modified methods: a comparative study

The aim of this paper is the comparison of structural, morphological and electrical properties of thermally extended graphite synthesized by chemical oxidation of graphite with sulfur of nitric acids at all other same conditions. Thermal treatments of graphite intercalation compounds were performed at a temperature of 600°C on the air for 10 min but additional annealing in temperature range of 100-600oC for 1 hour was done. The obtained materials were characterized by XRD, Raman spectroscopy and impedance spectroscopy. The evolution of structural ordering of thermally extended graphite samples at increasing of annealing temperature was traced. It was determined that the additional annealing allows to control the electrical conductivity and structural disordering degree of extended graphite samples that is useful for preparation of efficient current collectors for electrochemical capacitors.

Structural and electrophysical properties of thermally expanded graphite prepared by chemical methods: comparative analysis

The aim of this paper is the comparison of structural, morphological and electrical properties of thermally extended graphite synthesized by chemical oxidation of graphite with sulfur of nitric acids at all other same conditions. Thermal treatments of graphite intercalation compounds were performed at a temperature of 600°C on the air for 10 min but additional annealing in temperature range of 100-600oC for 1 hour was done. The obtained materials were characterized by XRD, Raman spectroscopy and impedance spectroscopy. The evolution of structural ordering of thermally extended graphite samples at increasing of annealing temperature was traced. It was determined that the additional annealing allows to control the electrical conductivity and structural disordering degree of extended graphite samples that is useful for preparation of efficient current collectors for electrochemical capacitors.

XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method

For the purpose of increasing the conductivity of β-Ga2O3 films, Sn doping in the β-Ga2O3 films has been explored using co-sputtering. Growth of β-Ga2O3 was confirmed by the XRD pattern for the undoped sample. However, it is shown that the Ga2O3 phase is transformed from the β to the γ phase by Sn doping, because of the increase of the phase transition temperature from the γ to the β phase. To improve the crystalline quality, additional annealing at 900°C for 60 min is performed to the Sn doped film. The XRD peaks corresponding with β-Ga2O3 could be confirmed after the additional annealing.

Hardness of Nanocrystalline TiO2 Thin Films

In this work results of hardness investigations of nanocrystalline TiO2 thin films are presented. Thin films were prepared by low pressure hot target reactive sputtering (LPHTRS) and high energy reactive magnetron sputtering (HERMS). In both processes a metallic Ti target was sputtered under low pressure of oxygen working gas. After deposition by LPHTRS TiO2 thin films with anatase structure were obtained and after additional post-process annealing at 1070 K, these films recrystallized into the rutile structure. Annealing also resulted in an increase of average crystallite size from 33 nm (for anatase) to 74 nm (for rutile). The HERMS process is a modification of the LPHTRS process with the addition of an increased amplitude of unipolar voltage pulses, powering the magnetron. This effectively increases the total energy of the depositing particles at the substrate and allows dense, nanocrystalline (8.7 nm crystallites in size) TiO2 thin film with the rutile structure to be formed directly. The hardness of the films was determined by nanoindentation. The results showed that the nanocrystalline TiO2-rutile thin film as-deposited using HERMS had high hardness (14.3 GPa), while the TiO2-anatase films as-deposited by LPHTRS, were 4-times lower (3.5 GPa). For LPHTRS films recrystallized by additional annealing, the change in thin film structure from anatase to rutile resulted in an increase of film hardness from 3.5 GPa to only 7.9 GPa. The HERMS process can therefore produce the TiO2 rutile structure directly, with hardness that is 2 times greater than rutile films produced by LPHTRS with additional annealing step.

CHARACTERIZATION OF THE GRAINS IN 2014 ALUMINIUM ALLOY AFTER EQUAL CHANNEL ANGULAR EXTRUSION (ECAE) PROCESS

In 2014 alloy deformed by Equal Channel Angular Extrusion process (ECAE) the changes in the size and shape of structural constituents were examined. The samples subjected after deformation to additional annealing at 300°C/10min were characterized by larger grains of nearly-equiaxial shapes. The microstructure after deformation was composed of a large number of the mutually crossing bands and microbands. The intersection of microbands resulted in formation of rectangular and rhombohedral grains. It was noted that the average grain size after ε = 4.6 (4 passes) was 0.2 μm.