Слои кремния, гиперпересыщенные теллуром, для фотодиодов видимого и инфракрасного диапазонов

Silicon layers doped with tellurium up to concentration (3–5)·1020 cm-3 have been formed by ion implantation with subsequent pulsed laser annealing. It was shown that 70–90% of the introduced impurity is in the substitution position in the silicon lattice. Si layers Tellurium- hyperdoped silicon layers exhibit significant absorption (35–65%) both in the visible and near IR (1100–2500 nm) spectral ranges, and the absorption increases with increasing wavelength. The current-voltage and capacitance-voltage characteristics, as well as the photosensitivity of photodetectors based on Te-doped silicon layers have been presented and discussed. The residual structural defects in implanted Si layers have been considered by deep-level transient spectroscopy.

First principles simulations of microscopic mechanisms responsible of the drastic reduction of electrical deactivation defects in Se hyperdoped silicon

By first principles simulations we systematically investigate Se hyperdoped silicon by computing, for different types of Se complexes, the formation energy as a function of dopant concentration. We identify the...