Effect of Pulsed Laser Annealing on Optical Properties of Selenium-Hyperdoped Silicon

ABSTRACTRaman measurements of temperature reported earlier have been repeated using a doubled Nd: YAG pulse for excitation and an electronically delayed dye laser pulse. These results, together with a variety of experimental tests of the Raman method, confirm the validity of the small temperature rise during pulsed laser annealing. Transmission measurements spanning the visible and near IR show that there exists a thin (∼ 70 nm) layer at the surface in which the induced absorption coefficient is ∼ 7 × 105 cm−1.

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Structural and optical properties of Si hyperdoped with Te by ion implantation and pulsed laser annealing

Vacuum ◽

10.1016/j.vacuum.2020.109434 ◽

2020 ◽

Vol 178 ◽

pp. 109434 ◽

Cited By ~ 1

Author(s):

Fadei F. Komarov ◽

Nikita S. Nechaev ◽

Gennadii D. Ivlev ◽

Liudmila A. Vlasukova ◽

Irina N. Parkhomenko ◽

...

Keyword(s):

Optical Properties ◽

Ion Implantation ◽

Laser Annealing ◽

Pulsed Laser ◽

Structural And Optical Properties ◽

Pulsed Laser Annealing

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Effect of High Repetition Pulsed Laser Annealing on Optical Properties of Phosphorus Ion-Implanted ZnO Nanorods

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.699.383 ◽

2013 ◽

Vol 699 ◽

pp. 383-386

Author(s):

Tetsuya Shimogaki ◽

Taihei Ofuji ◽

Norihiro Tetsuyama ◽

Kota Okazaki ◽

Mitsuhiro Higashihata ◽

...

Keyword(s):

Optical Properties ◽

Ion Implantation ◽

Repetition Rate ◽

Laser Annealing ◽

Zno Nanorods ◽

Pulsed Laser ◽

High Repetition ◽

Pulsed Laser Annealing ◽

Krf Excimer Laser ◽

Ion Implanted

We report on the effect of high repetition pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus ion-implanted ZnO nanorods. The recovery levels of phosphorus ion-implanted ZnO nanorods have been measured by photoluminescence spectra and cathode luminescence (CL) images. After ion implantation on the surface of ZnO nanorods, CL was disappeared over 400 nm below the surface due to the damage caused by ion implantation. When the annealing was performed at a low repetition, CL was recovered only shallow area below the surface. The depth of the annealed area was increased with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded to anneal the whole damaged area over 400 nm in depth and to observe CL. Thus, the effectiveness of high repetition pulsed laser annealing on phosphorus ion-implanted ZnO nanorods was demonstrated.

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Influence of pulsed laser annealing on the optical properties of ZnO nanorods

physica status solidi (a) ◽

10.1002/pssa.201228065 ◽

2012 ◽

Vol 209 (8) ◽

pp. 1461-1466 ◽

Cited By ~ 8

Author(s):

T. N. Lin ◽

C. P. Huang ◽

G. W. Shu ◽

J. L. Shen ◽

C. S. Hsiao ◽

...

Keyword(s):

Optical Properties ◽

Laser Annealing ◽

Zno Nanorods ◽

Pulsed Laser ◽

Pulsed Laser Annealing

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A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon

MRS Proceedings ◽

10.1557/proc-13-35 ◽

1983 ◽

Vol 13 ◽

Cited By ~ 5

Author(s):

G. E. Jellison ◽

D. H. Lowndes ◽

R. F. Wood

Keyword(s):

Optical Properties ◽

Pulse Width ◽

Laser Annealing ◽

Pulsed Laser ◽

Detailed Examination ◽

Temperature Gradients ◽

Probe Laser ◽

Time Resolved ◽

Pulsed Laser Annealing ◽

Anti Stokes

ABSTRACTRaman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

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In Situ Monitoring of Pulsed Laser Annealing of Eu-Doped Oxide Thin Films

Materials ◽

10.3390/ma14247576 ◽

2021 ◽

Vol 14 (24) ◽

pp. 7576

Author(s):

Michal Novotný ◽

Jan Remsa ◽

Šárka Havlová ◽

Joris More-Chevalier ◽

Stefan Andrei Irimiciuc ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Laser Annealing ◽

Pulsed Laser ◽

In Situ Monitoring ◽

Oxide Thin Films ◽

Force Microscopy ◽

Pulsed Laser Annealing ◽

Doped Oxide

Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed.

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