fluorescent quenching
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Heliyon ◽  
2021 ◽  
Vol 7 (4) ◽  
pp. e06858
Author(s):  
Jie Zhang ◽  
Changgen Shi ◽  
Lei Zhang ◽  
Yan Zhang ◽  
Qing Lu ◽  
...  


2020 ◽  
Vol 260 ◽  
pp. 114627
Author(s):  
Huanhuan Liu ◽  
Ang Xu ◽  
Zhijun Feng ◽  
Deng Long ◽  
Xinyi Chen ◽  
...  


2020 ◽  
Vol 11 (3) ◽  
Author(s):  
R. Li ◽  
J.C. Yu ◽  
Z.-T. Jiang ◽  
R.-H. Zhou ◽  
H.-Y. Liu


Author(s):  
Yan-Qin Huang ◽  
Xia Zhang ◽  
Jin-Hua Xue ◽  
Ling Liu ◽  
Si-Han Chen ◽  
...  


Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 738 ◽  
Author(s):  
Yue Yang ◽  
Tong Zou ◽  
Zhezhe Wang ◽  
Xinxin Xing ◽  
Sijia Peng ◽  
...  

The fluorescence intensity of N, S co-doped graphene quantum dots (N, S-GQDs) can be quenched by Fe3+ and Hg2+. Density functional theory (DFT) simulation and experimental studies indicate that the fluorescence quenching mechanisms for Fe3+ and Hg2+ detection are mainly attributed to the inner filter effect (IFE) and dynamic quenching process, respectively. The electronegativity difference between C and doped atoms (N, S) in favor to introduce negative charge sites on the surface of N, S-GQDs leads to charge redistribution. Those negative charge sites facilitate the adsorption of cations on the N, S-GQDs’ surface. Atomic population analysis results show that some charge transfer from Fe3+ and Hg2+ to N, S-GQDs, which relate to the fluorescent quenching of N, S-GQDs. In addition, negative adsorption energy indicates the adsorption of Hg2+ and Fe2+ is energetically favorable, which also contributes to the adsorption of quencher ions. Blue fluorescent N, S-GQDs were synthesized by a facile one-pot hydrothermal treatment. Fluorescent lifetime and UV-vis measurements further validate the fluorescent quenching mechanism is related to the electron transfer dynamic quenching and IFE quenching. The as-synthesized N, S-GQDs were applied as a fluorescent probe for Fe3+ and Hg2+ detection. Results indicate that N, S-GQDs have good sensitivity and selectivity on Fe3+ and Hg2+ with a detection limit as low as 2.88 and 0.27 nM, respectively.



2019 ◽  
Vol 281 ◽  
pp. 91-96 ◽  
Author(s):  
Chun Wang ◽  
Keyu Xing ◽  
Ganggang Zhang ◽  
Meifang Yuan ◽  
Shaolan Xu ◽  
...  


2019 ◽  
Vol 411 (10) ◽  
pp. 2169-2175 ◽  
Author(s):  
Yuan Chen ◽  
Qiangqiang Fu ◽  
Jun Xie ◽  
Hong Wang ◽  
Yong Tang


2019 ◽  
Vol 2 (2) ◽  
pp. 790-798 ◽  
Author(s):  
Siyong Gu ◽  
Chien-Te Hsieh ◽  
Yi-Yin Tsai ◽  
Yasser Ashraf Gandomi ◽  
Sinchul Yeom ◽  
...  


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