scholarly journals Characterization of Graphenic Carbon Produced by Pulsed Laser Ablation of Sacrificial Carbon Tapes

2021 ◽  
Vol 11 (24) ◽  
pp. 11972
Author(s):  
Igor V. Ershov ◽  
Anatoly A. Lavrentyev ◽  
Natalia V. Prutsakova ◽  
Olga M. Holodova ◽  
Irina V. Mardasova ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Pulsed Laser ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dielectric Substrates ◽  
Neutral Gas ◽  
Reduced Graphene ◽  
Nonvolatile Memory Devices ◽  
Deposited Films

This paper reports on the pulsed laser deposition of nanocarbon films on metal and dielectric substrates, using high-purity sacrificial carbon tape as a carbon source on a neutral gas background. The films were characterized by X-ray diffraction (XRD), photoelectron (XPS) and Raman spectroscopy. The XRD and Raman structural analyses revealed that the synthesized films have a graphenic nanocrystalline turbostratic structure, with sp2 clusters about 15–18 nm in size, depending on the laser fluence. A significant decrease in the oxygen and hydrogen contents in the films, in comparison with the target material, was established using XPS, as well as a significant decrease in the sp3 carbon content. The deposited films were found to be similar to reduced graphene oxide (rGO) in composition, with a surprisingly low number of defects in the sp2-matrix. The method proposed in the work may have good prospects of application in the production of energy storage and nonvolatile memory devices.

Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

2011 ◽  
Vol 485 ◽  
pp. 133-136 ◽  
Author(s):  
Ryoichi Saotome ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Jeffrey S. Cross ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Electrochemical Impedance ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Partial Pressures ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Deposited Films

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

2000 ◽  
Vol 658 ◽  
Author(s):  
Trong-Duc Doan ◽  
Cobey Abramowski ◽  
Paul A. Salvador
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

Characterization of CdCrTe Layers Obtained by Pulsed Laser Deposition

2013 ◽  
Vol 203-204 ◽  
pp. 193-197
Author(s):  
Piotr Sagan ◽  
Volodymyr Popovych ◽  
Mariusz Bester ◽  
Marian Kuzma
Keyword(s):  
Solid Solution ◽  
Electron Diffraction ◽  
Lattice Constant ◽  
Pulse Length ◽  
Pulsed Laser ◽  
Thin Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

In this paper we have obtained CdCrTe thin layers by PLD method using the YAG:Nd3+ laser with pulse length 250μs. Synthesized CdCrTe solid solution with 50% at. of Cr has been taken as a target. The layers were deposited on KCl substrate. The target and films were analyzed using X-ray diffraction, TEM microscope and THEED electron diffraction. The morphology of the layers are homogenous. However, we have detected several crystallographic phases: cubic CdTe, hexagonal Cr and hexagonal Te. From the measurements of lattice constant of the layer, their composition was determined to be x=0,14

scholarly journals Ориентационные соотношения при структурном превращении моноклинной и кубической фаз в сульфиде серебра

2019 ◽  
Vol 53 (7) ◽  
pp. 958
Author(s):  
С.И. Садовников ◽  
А.А. Ремпель
Keyword(s):  
High Temperature ◽  
Nonvolatile Memory ◽  
Silver Sulfide ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Nonvolatile Memory Devices ◽  
Metal Sublattice ◽  
Resistive Switches ◽  
Potential Basis

Based on the experimental data on high-temperature X-ray diffraction and high resolution transmission electron microscopy of silver sulfide, the orientation relationships between the low-temperature monoclinic semiconductor acantite alfa-Ag2S and the high-temperature body-centered argentite beta-Ag2S are determined. It is found that, in contrast to acanthite, the possible distances between silver atoms in a cubic argentite are too small for the positions of the metal sublattice to be occupied by Ag atoms with a probability of 1. It is shown that the acanthite (010) and (001) atomic planes are parallel to the planes ( 1-10) and (221) of argentite, respectively. The orientational relationships found between acanthite and argentite are important for understanding the physical action of the Ag2S/Ag heteronanostructure, considered as a potential basis for creating resistive switches and nonvolatile memory devices.

DEPOSITION OF TiAlV THIN FILMS BY PULSED LASER AND DC MAGNETRON SPUTTERING: STRUCTURAL, COMPOSITIONAL AND ELECTROCHEMICAL CORROSION STUDY

2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Corrosion Test ◽  
Pulsed Laser ◽  
Electrochemical Corrosion ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.

Characterization of Pulsed Laser Deposited Zinc Oxide

1992 ◽  
Vol 276 ◽  
Author(s):  
N. J. Ianno ◽  
L. McConville ◽  
N. Shaikh
Keyword(s):  
Zinc Oxide ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Piezoelectric Response ◽  
Zno Films ◽  
Zinc Oxide Films ◽  
Substrate Temperatures ◽  
532 Nm ◽  
Deposited Films

ABSTRACTThe pulsed laser deposition of zinc oxide films (ZnO) has been studied as a function of laser wavelength, and substrate temperature. The deposited films were characterized by x-ray diffractometry, Auger electron spectroscopy, and scanning electron microscopy. Highly textured (002) ZnO films have been deposited at substrate temperatures of 300 C with laser wavelengths of 532 nm and 248 nm. However, the energy fluence of 248 nm radiation controls the degree of texturing, allowing highly textured films to be deposited at room temperature.Smart structures based on embedded, textured ZnO coated fibers, and wires exhibit excellent piezoelectric response to external stress.

Characterization of BaTiO3 Thin Films Deposited by Pulsed-Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
Christopher Scarfone ◽  
M. Grant Norton ◽  
C. Barry Carter ◽  
Jian Li ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Film Surface ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Very High

AbstractThin films of barium titanate (BaTiOs) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic as evidenced by both x-ray diffraction and ion-channeling techniques. The film surface appeared smooth and contained a low density of particulates. This latter feature is believed to be due to the formation of target pellets having a very high density.

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