(Invited) ALD of Phase Change and Threshold Switching Materials for Next-Generation Nonvolatile Memory Devices

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

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Room-temperature bias acceleration test for data retention screening on SONOS nonvolatile memory devices

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422539 ◽

2007 ◽

Author(s):

Jeong-Mo Hwang ◽

Todd Wallinger ◽

Holden Hackbarth

Keyword(s):

Nonvolatile Memory ◽

Room Temperature ◽

Memory Devices ◽

Data Retention ◽

Temperature Bias ◽

Nonvolatile Memory Devices ◽

Acceleration Test

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Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films

Applied Physics Letters ◽

10.1063/1.2771064 ◽

2007 ◽

Vol 91 (7) ◽

pp. 073511 ◽

Cited By ~ 42

Author(s):

Liang Chen ◽

Yidong Xia ◽

Xuefei Liang ◽

Kuibo Yin ◽

Jiang Yin ◽

...

Keyword(s):

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices

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Nonvolatile Memory Devices With Magnetic Nanowires Controlled by Spin-Transfer and Spin-Orbit Torques

2018 IEEE International Magnetics Conference (INTERMAG) ◽

10.1109/intmag.2018.8508845 ◽

2018 ◽

Author(s):

S. Fukami ◽

H. Ohno

Keyword(s):

Nonvolatile Memory ◽

Spin Transfer ◽

Memory Devices ◽

Magnetic Nanowires ◽

Spin Orbit ◽

Nonvolatile Memory Devices

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Electric Fatigue in Metal/Ferroelectric Polymer/SiO2/p-Si Capacitors

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.706-708.103 ◽

2013 ◽

Vol 706-708 ◽

pp. 103-107

Author(s):

Jing Hang Hu ◽

Xue Jian Yan ◽

Guo Dong Zhu

Keyword(s):

Nonvolatile Memory ◽

Memory Devices ◽

Electrical Stability ◽

Ferroelectric Polymer ◽

Nonvolatile Memory Devices ◽

Electric Fatigue ◽

Fatigue Endurance

In recent years ferroelectric polymer-based nonvolatile memory devices have attracted much attention due to their flexibility, transparency and ease of production. However, their electrical stability is seldom studied. In this letter we report the observation of electric fatigue in metal/ferroelectric polymer/SiO2/p-Si capacitor memories, which is compared with the electric fatigue obtained from metal/ferroelectric polymer/p-Si capacitors. Our experiments indicate that the existence of SiO2 layer has greatly improved the fatigue endurance in metal/ferroelectric polymer/SiO2/p-Si capacitors. We also discuss the possible mechanism causing this improved fatigue endurance.

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