write endurance
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Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1111
Author(s):  
Jun Hyeong Choi ◽  
Kyung Min Kim ◽  
Jong Wook Kwak

Recently, high-performance embedded systems have adopted phase change memory (PCM) as their main memory because PCMs have attractive advantages, such as non-volatility, byte-addressability, high density, and low power consumption. However, PCMs have disadvantages, such as limited write endurance in each cell and high write latency compared to DRAMs. Therefore, researchers have investigated methods for enhancing the limitations of PCMs. In this paper, we propose a page replacement policy called tendency-aware CLOCK (TA-CLOCK) for the hybrid main memory of embedded systems. To improve the limited write endurance of PCMs, TA-CLOCK classifies the page access tendency of the victim page through access pattern analysis and determines the migration location of the victim page. Through the classification of the page access tendency, TA-CLOCK reduces unnecessary page migrations from DRAMs to PCMs. Unnecessary migrations cause an increase in write operations in PCMs and the energy consumption of the hybrid main memory in embedded systems. Thus, our proposed policy improves the limited write endurance of PCMs and enhances the access latency of the hybrid main memory of embedded systems by classifying the page access tendency. We compared the TA-CLOCK with existing page replacement policies to evaluate its performance. In our experiments, TA-CLOCK reduced the number of write operations in PCMs by 71.5% on average, and it enhanced the energy delay product by 38.3% on average compared with other page replacement policies.


2021 ◽  
pp. 1-1
Author(s):  
Ava Jiang Tan ◽  
Yu-Hung Liao ◽  
Li-Chen Wang ◽  
Nirmaan Shanker ◽  
Jong-Ho Bae ◽  
...  

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035236 ◽  
Author(s):  
Yohei Shiokawa ◽  
Eiji Komura ◽  
Yugo Ishitani ◽  
Atsushi Tsumita ◽  
Keita Suda ◽  
...  

2016 ◽  
Vol 25 (11) ◽  
pp. 1650139 ◽  
Author(s):  
Sparsh Mittal ◽  
Jeffrey S. Vetter

Researchers have explored both volatile memories (e.g., SRAM and embedded DRAM) and nonvolatile memories (NVMs, such as resistive RAM) for design of on-chip caches. However, both volatile and nonvolatile memories present unique reliability challenges. NVMs are immune to radiation-induced soft errors, however, due to their limited write endurance, they are vulnerable to hard errors under nonuniform write distribution. By contrast, SRAM has high write endurance but is susceptible to soft errors due to cosmic radiation. SRAM–NVM hybrid caches and the management techniques for them aim to bring the best of SRAM and NVM together, however, the reliability implications of them have not been well understood. In this paper, we show that there are inherent tradeoffs in improving resilience to hard and soft errors in hybrid caches such that mitigating one may result in aggravating another. We confirm this by experiments with two recent hybrid cache management techniques. We also re-examine cache design trends in modern processors from reliability perspective. This paper provides valuable insights to system developers for making reliability-aware design decisions.


2013 ◽  
Vol 102 (5) ◽  
pp. 052404 ◽  
Author(s):  
S. Amara-Dababi ◽  
H. Béa ◽  
R. C. Sousa ◽  
C. Baraduc ◽  
B. Dieny

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