scholarly journals Current‐voltage model of a graphene nanoribbon p‐n junction and Schottky junction diode

2021 ◽  
Author(s):  
Samira Shamsir ◽  
Laila Parvin Poly ◽  
Rajat Chakraborty ◽  
Samia Subrina
Keyword(s):  
Graphene Nanoribbon ◽  
Schottky Junction ◽  
Current Voltage ◽  
Junction Diode

scholarly journals Electron Spectrum and Tunneling Current of the Toroidal and Helical Graphene Nanoribbon-Quantum Dots Contact

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Mikhail B. Belonenko ◽  
Nikolay G. Lebedev ◽  
Alexander V. Zhukov ◽  
Natalia N. Yanyushkina
Keyword(s):  
Quantum Dots ◽  
Dirac Equation ◽  
Density Of States ◽  
Electron Spectrum ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Curved Space ◽  
Long Wave ◽  
Current Voltage ◽  
Current Voltage Characteristics

We study the electron spectrum and the density of states of long-wave electrons in the curved graphene nanoribbon based on the Dirac equation in a curved space-time. The current-voltage characteristics for the contact of nanoribbon-quantum dot have been revealed. We also analyze the dependence of the specimen properties on its geometry.

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

2014 ◽  
Vol 13 (01) ◽  
pp. 1450003 ◽  
Author(s):  
ALEXEY V. KLYUEV ◽  
EVGENY I. SHMELEV ◽  
ARKADY V. YAKIMOV
Keyword(s):  
Experimental Data ◽  
Schottky Diode ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Voltage Characteristic ◽  
Schottky Junction ◽  
Current Voltage Characteristic ◽  
Impurity Atoms ◽  
Current Voltage

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.

scholarly journals Analysis of Simulated Output Characteristics of Gas Sensor Based on Graphene Nanoribbon

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
A. Mahmoudi ◽  
M. Troudi ◽  
Y. Bergaoui ◽  
P. Bondavalli ◽  
N. Sghaier
Keyword(s):  
Gas Sensor ◽  
Gas Sensing ◽  
Channel Length ◽  
Graphene Nanoribbon ◽  
Sensor Model ◽  
Current Voltage ◽  
Output Characteristics ◽  
The Right ◽  
New Generation ◽  
The Given

This work presents simulated output characteristics of gas sensor transistors based on graphene nanoribbon (GNRFET). The device studied in this work is a new generation of gas sensing devices, which are easy to use, ultracompact, ultrasensitive, and highly selective. We will explain how the exposure to the gas changes the conductivity of graphene nanoribbon. The equations of the GNRFET gas sensor model include the Poisson equation in the weak nonlocality approximation with proposed sensing parameters. As we have developed this model as a platform for a gas detection sensor, we will analyze the current-voltage characteristics after exposure of the GNRFET nanosensor device to NH3gas. A sensitivity of nearly 2.7% was indicated in our sensor device after exposure of 1 ppm of NH3. The given results make GNRFET the right candidate for use in gas sensing/measuring appliances. Thus, we will investigate the effect of the channel length on the ON- and OFF-current.

scholarly journals The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Meisam Rahmani ◽  
Razali Ismail ◽  
Mohammad Taghi Ahmadi ◽  
Mohammad Javad Kiani ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Schottky Barrier Diode ◽  
Current Voltage Characteristic ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

ULTRA-HIGH SENSITIVITY VANADIUM–VANADIUM SESQUIOXIDE–VANADIUM (V–V2O3–V) SYMMETRIC TUNNEL JUNCTION DIODE

2019 ◽  
Vol 26 (08) ◽  
pp. 1950041
Author(s):  
MOHAMED ABDEL-RAHMAN
Keyword(s):  
Tunnel Junction ◽  
High Sensitivity ◽  
Dynamic Resistance ◽  
Applied Bias ◽  
Current Voltage ◽  
Vanadium Sesquioxide ◽  
Theoretical Predictions ◽  
Novel Material ◽  
Junction Diode ◽  
Mim Diode

In this paper, a symmetrical MIM tunnel junction diode with a novel material combination, vanadium–vanadium sequioxide–vanadium (V–V2O3–V) is fabricated and electrically characterized. Analysis of the measured current-voltage ([Formula: see text]–[Formula: see text] characteristics of the fabricated MIM diode revealed an ultra-high diode sensitivity of [Formula: see text]9.24[Formula: see text][Formula: see text] at an applied bias of [Formula: see text]0.104[Formula: see text]V. Based on the measured [Formula: see text]–[Formula: see text] characteristics, theoretical predictions were performed showing that the diode’s dynamic resistance can be tuned for matching to coupled antennas, in rectenna structures, whilst maintaining high levels of sensitivities using practically realizable V2O3 insulator thicknesses.

The switching behaviors induced by torsion angle in a diblock co-oligomer molecule with tailoring graphene nanoribbon electrodes

2018 ◽  
Vol 32 (04) ◽  
pp. 1850036 ◽  
Author(s):  
Aiyun Yang ◽  
Caijuan Xia ◽  
Boqun Zhang ◽  
Jun Wang ◽  
Yaoheng Su ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Torsion Angle ◽  
Density Functional ◽  
Graphene Nanoribbon ◽  
Molecular Device ◽  
Functional Theory ◽  
Electronic Transport Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics

By applying first-principles method based on density functional theory combined with nonequilibrium Green’s function, we investigate the effect of torsion angle on the electronic transport properties in dipyrimidinyl–diphenyl co-oligomer molecular device with tailoring graphene nanoribbon electrodes. The results show that the torsion angle plays an important role on the electronic transport properties of the molecular device. When the torsion angle rotates from 0[Formula: see text] to 90[Formula: see text], the molecular devices exhibit very different current–voltage characteristics which can realize the on and off states of the molecular switch.

scholarly journals Current-voltage characteristics of a graphene-nanoribbon field-effect transistor

2008 ◽  
Vol 103 (9) ◽  
pp. 094510 ◽  
Author(s):  
V. Ryzhii ◽  
M. Ryzhii ◽  
A. Satou ◽  
T. Otsuji
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor

scholarly journals Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping

Nano Letters ◽  
2007 ◽  
Vol 7 (6) ◽  
pp. 1469-1473 ◽  
Author(s):  
Qimin Yan ◽  
Bing Huang ◽  
Jie Yu ◽  
Fawei Zheng ◽  
Ji Zang ◽  
...  
Keyword(s):  
Graphene Nanoribbon ◽  
Current Voltage ◽  
Current Voltage Characteristics
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