Correlation function and electronic spectral line broadening in relativistic plasmas

The electrons dynamics and the time autocorrelation function Cee(t) for the total electric microfield of the electrons on positive charge impurity embedded in a plasma are considered when the relativistic dynamic of the electrons is taken into account. We have, at first, built the effective potential governing the electrons dynamics. This potential obeys a nonlinear integral equation that we have solved numerically. Regarding the electron broadening of the line in plasma, we have found that when the plasma parameters change, the amplitude of the collision operator changes in the same way as the time integral of Cee(t). The electron-impurity interaction is taken at first time as screened Deutsh interaction and at the second time as Kelbg interaction. Comparisons of all interesting quantities are made with respect to the previous interactions as well as between classical and relativistic dynamics of electrons.

CONDUCTIVITY OF GAPPED GRAPHENE WITHIN RANDOM PHASE APPROXIMATION

The gapped graphene is technologically more important as electronic devices made up of conventional semiconductors are based on the presence of a gap between the valence and conduction bands. In this paper, we report our analytical and numerical calculation of conductivity of gapped graphene on SiO 2 substrate and its variation with the governing parameters of carrier density, band gap, long range charge impurity scatterers, short range neutral defect scatterers, impurity distance from the graphene interface and potential strength of short range scattering centers. We find that the conductivity for unscreened potential decreases with increasing band gap but when screening is incorporated the trend is not only reversed but there is a sharp enhancement in its magnitude also. The sub linear behavior seen in conductivity in the case of gapless graphene at high carrier concentration due to enhanced scattering from the short range neutral defects is also observed for gapped graphene, and it is further observed that increasing the potential strength of the defect scatterers brings in the same behavior at relatively smaller carrier densities.

BOUND STATES IN GRAPHENE

We present a quantum analysis of the massless excitations in graphene with a charge impurity. When the effective charge exceeds a certain critical value, the spectrum is quantised and unbounded from below. The corresponding eigenstates are square-integrable at infinity and have a rapidly oscillatory behaviour in the short distance, which can be interpreted as a fall to the centre. Using a cutoff regularisation, we show that the effective Coulomb interaction strength is driven to its critical value under the renormalisation group flow. In the subcritical region, we find bound states with imaginary values of the energy for certain range of the system parameters. The physical significance of these bound states with imaginary eigenvalues is discussed.

Simulations of Charge Gain and Collection Efficiency from Diamond Amplifiers

A promising new concept of a diamond amplified photocathode for generation of high-current, high-brightness, and low thermal emittance electron beams was recently proposed and is currently under active development. To better understand the different effects involved, we have been developing models, within the VORPAL computational framework, to simulate secondary electron generation and charge transport in diamond. The implemented models include inelastic scattering of electrons and holes for generation of electron-hole pairs, elastic, phonon, and charge impurity scattering. We will discuss these models and present results from 3D VORPAL simulations on charge gain and collection efficiency as a function of primary electron energy and applied electric field. The implemented modeling capabilities already allow us to investigate specific effects and compare simulation results with experimental data.