Effect of Stresses in Molybdenum Back Contact Film on Properties of CIGSS Absorber Layer

2005 ◽  
Vol 865 ◽  
Author(s):  
Ankur A. Kadam ◽  
Anant H. Jahagirdar ◽  
Neelkanth G. Dhere
Keyword(s):  
Magnetron Sputtering ◽  
Contact Layer ◽  
Absorber Layer ◽  
Back Contact ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Torr Pressure ◽  
Lower Sheet Resistance ◽  
Deposition Conditions

AbstractAnalysis of CuIn1-x Gax Se2-y Sy (CIGSS) absorber and molybdenum back contact layer was carried out to understand the changes in the microstructure of CIGSS layer as a function of the deposition conditions and the nature of stress in the underlying Mo film. All the depositions were carried out on 10 cm x 10 cm glass substrates. Compressive and tensile stressed molybdenum films were prepared with combinations of deposition parameters; power and pressure. CIGSS absorber layer was prepared by depositing metallic precursors using DC magnetron sputtering followed by selenization and sulfurization. Molybdenum layer deposited at 300 W and 3 x 10 Torr pressure produced compressive stress with compact, well adherent and lower sheet resistance as compared to the tensile stressed film deposited at 200 W and 5 x 10 Torr. The crystallinity of the CIGSS film was found not to depend on the stress in the underlying molybdenum film. However, the adhesion at the Mo/CIGSS as well as gallium profile at the Mo/CIGSS interface were affected by the stress.

Nanohardness of DC Magnetron Sputtered W – C Coatings as a Function of Composition and Residual Stresses

2015 ◽  
Vol 662 ◽  
pp. 107-110 ◽  
Author(s):  
Michal Novák ◽  
František Lofaj ◽  
Petra Hviščová ◽  
Rudolf Podoba ◽  
Marián Haršáni ◽  
...  
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Magnetron Sputtering ◽  
Linear Increase ◽  
Indentation Modulus ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Compressive Stresses ◽  
Deposition Parameters

The effects of residual stresses in thin W-C based coatings were investigated with the aim to find their influence on nanohardness and indentation modulus. Ten samples of W-C based coatings were deposited on microslide glass substrates using DC magnetron sputtering at the identical deposition parameters. Their thickness was in the range from 500 to 600 nm. The residual stresses in the coatings varied from 1.5 GPa up to 4.4 GPa. Increase of residual stress caused linear increase of HITfrom 16 to 19.5 GPa. This increase was only the result of the compressive stresses. EITof the studied coatings was not sensitive to residual stresses and corresponded to 185 GPa ± 15 GPa.

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 572-575 ◽  
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang ◽  
Ai Ping Zhou
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Xrd Patterns ◽  
Deposited Films

Ti-Ga co-doped ZnO thin films (TGZO) have been successfully prepared on glass substrates by DC magnetron sputtering at room temperature. The X-ray diffraction (XRD) patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The distance between target and substrate was varied from 41 to 75 mm. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 75 to 46 mm. However, as the distance decreases further, the electrical resistivity increases. It is obtained that the lowest resistivity is 2.0610-4cm when the distance between target and substrate is 46 mm. In the visible region, the TGZO films show a high average transmittance of above 90 %.

Mechanical Properties of CrN Films Deposited by Magnetron Sputtering Method

Tribology ◽  
2006 ◽  
Author(s):  
A. H. Jayatissa ◽  
D. Wagner ◽  
S. Sorin ◽  
N. X. Randall
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Properties ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Mechanical Coating ◽  
Deposition Conditions

The mechanical properties of CrN films coated by radio frequency (rf) magnetron sputtering method were investigated. CrN films were coated on stainless steel, silicon wafer and glass substrates using sputtering of a Cr target in nitrogen ambient. The films were coated by varying the deposition temperature, nitrogen partial pressure and rf power density. The films coated were characterized by nanoindentation method, microhardness, optical, and corrosion tests. In order to use CrN as mechanical coating material, the surface roughness, hardness and adhesion properties have to be determined. The film properties were measured using atomic force microscopy and nanoindentation method and analyzed as a function of deposition conditions. It was found that these properties can be varied by changing the deposition conditions.

scholarly journals Tuning The Crystallographic Structure And Morphology Of Nanocrystalline CaB6 Films Deposited By DC Magnetron Sputtering

2015 ◽  
Vol 60 (2) ◽  
pp. 897-901 ◽  
Author(s):  
L. Zhang ◽  
G. Zhao ◽  
H. Liu ◽  
G. Min ◽  
H. Yu
Keyword(s):  
Grain Size ◽  
Magnetron Sputtering ◽  
Energy Dispersive Spectrometer ◽  
Argon Pressure ◽  
Raman Shift ◽  
Crystallographic Structure ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Crystallite Sizes

Abstract Through changing the argon pressure, CaB6 films with different crystallographic orientation and morphology on glass substrates were prepared by direct current (DC) magnetron sputtering method. The film textures, crystallite sizes, composition and morphology were investigated by a spectrum of characterizing techniques in terms of X-ray diffraction (XRD), field emission scanning electron microscopy with energy dispersive spectrometer (FESEM-EDS), atomic force microscopy (AFM), Raman shift spectroscopy. The influence of argon pressure on microstructure was studied. The average grain size increased with the argon pressure increasing from 0.8 Pa to 1.5 Pa. Meanwhile, the dominant crystal face changed from (110) to (100). Then the grain size decreased when the argon pressure increased to 2.0 Pa. The surface morphology evolved from typical cauliflower-like nanocrystalline clusters to faceted rectangular pyramids. It was found that considerable amount of argon atoms were trapped in the films. The formation process of CaB6 films was also analyzed in this paper.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Joining of TiAl Using a Thin Multilayer

2006 ◽  
Vol 514-516 ◽  
pp. 1323-1327 ◽  
Author(s):  
Liliana I. Duarte ◽  
Ana Sofia Ramos ◽  
Manuel F. Vieira ◽  
Filomena Viana ◽  
M. Teresa Vieira
Keyword(s):  
Chemical Composition ◽  
Magnetron Sputtering ◽  
Automotive Industry ◽  
Joint Strength ◽  
Small Deformation ◽  
Cost Effective ◽  
Bonded Joints ◽  
Bilayer Thickness ◽  
Dc Magnetron Sputtering ◽  
Deposition Conditions

As TiAl based alloys begin to approach maturity, the development of successful and cost effective joining methods will be required. The growing industrial interest in these materials, particularly in aerospace and automotive industry, led to an interesting challenge - how to joint parts and components in order to produce integrated and resistant structures. Diffusion bonding of materials produces components with thinner interfaces than other joining techniques do. The absence of abrupt microstructure discontinuity and the small deformation induced maximize joint strength. This work focuses on the joining of TiAl using a thin multilayer obtained by alternating nanometric layers of titanium and aluminium. The Ti/Al layers were deposited onto the γ-TiAl samples by DC magnetron sputtering. The interfaces of these diffusion bonded joints depend on processing and deposition conditions. In this work we describe the influence of bilayer thickness (period) and on microstructure and chemical composition of the joining interfaces.

scholarly journals Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Sin-Liang Ou ◽  
Feng-Min Lai ◽  
Lun-Wei Yuan ◽  
Da-Long Cheng ◽  
Kuo-Sheng Kao
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Visible Region ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Deposition Parameters ◽  
Sample Position ◽  
Doped Zno

The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value ofR/ris introduced. Here,ris the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position ofR/ris fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA) at 600°C with N2atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.

The Effect of Dy-Additive on Phase Transformation and Magnetic Properties of Fe-Pt Alloy Films

2014 ◽  
Vol 513-517 ◽  
pp. 48-50
Author(s):  
Gang Cheng ◽  
Yi Zhe Sun ◽  
Kuang Pan ◽  
Lin Li ◽  
Lei Ma ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Phase Transformation ◽  
Magnetron Sputtering ◽  
Time Increase ◽  
Dc Magnetron Sputtering ◽  
Alloy Films ◽  
Glass Substrates ◽  
Remanence Ratio ◽  
Pt Alloy ◽  
Annealing Time Increase

A series of Fe-Pt based alloy films were deposited on glass substrates by DC magnetron sputtering. It is found that the Fe3Pt and FePt3 phases appear in Dy-addition films at first and then a composition reaction Fe3Pt + FePt3 FePt occurs at 500°C as annealing time increase. It suggested that Dy element can restrain the fct phase forming but help to form Fe3Pt and FePt3 phases. Coercivity and remanence ratio of DyxFe50-xPt50 alloy films annealed at 500°C for 200 h achieve the maximum 11kOe and 0.89 as x =1.5, respectively.

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