Ultrawide Band Gap Oxide Nanodots (Eg > 4.8 eV) for a High-Performance Deep Ultraviolet Photovoltaic Detector

2020 ◽  
Vol 12 (5) ◽  
pp. 6030-6036 ◽  
Author(s):  
Hao Kan ◽  
Wei Zheng ◽  
Chen Fu ◽  
Richeng Lin ◽  
Jingting Luo ◽  
...  
Keyword(s):  
Band Gap ◽  
High Performance ◽  
Deep Ultraviolet ◽  
Photovoltaic Detector

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

LiGeBO4: a nonlinear optical material with a balance between deep-ultraviolet cut-off edge and large SHG response induced by hand-in-hand tetrahedra

2019 ◽  
Vol 6 (4) ◽  
pp. 914-919 ◽  
Author(s):  
Qiong Liu ◽  
Cong Hu ◽  
Xin Su ◽  
Maierhaba Abudoureheman ◽  
Shilie Pan ◽  
...  
Keyword(s):  
Band Gap ◽  
Nonlinear Optical ◽  
Optical Material ◽  
Nonlinear Optical Material ◽  
Deep Ultraviolet

LiGeBO4 is found to be a material that can balance a large band gap (>6.2 eV) and strong SHG coefficient (2 × KDP), which is rarely seen in tetrahedral-based crystals.

Layer-dependent photocatalysts of GaN/SiC-based multilayer van der Waals heterojunctions for Hydrogen Evolution

2021 ◽  
Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Hydrogen Evolution ◽  
High Performance ◽  
Van Der Waals ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Van Der Waals Heterostructures ◽  
Composite Photocatalysts

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...

scholarly journals Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator

2019 ◽  
Vol 8 (12S2) ◽  
pp. 61-66
Keyword(s):  
Band Gap ◽  
Mole Fraction ◽  
High Performance ◽  
Device Simulation ◽  
Channel Length ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Simulation Results ◽  
High Performance Application ◽  
Device Modelling

This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.

High-performance deep-ultraviolet optics for free-electron lasers

2002 ◽  
Vol 41 (16) ◽  
pp. 3236 ◽  
Author(s):  
Alexandre Gatto ◽  
Roland Thielsch ◽  
Joerg Heber ◽  
Norbert Kaiser ◽  
Detlev Ristau ◽  
...  
Keyword(s):  
Free Electron ◽  
High Performance ◽  
Free Electron Lasers ◽  
Deep Ultraviolet

High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on a Si substrate

Nanoscale ◽  
2018 ◽  
Vol 10 (32) ◽  
pp. 15285-15293 ◽  
Author(s):  
Chao Xie ◽  
Longhui Zeng ◽  
Zhixiang Zhang ◽  
Yuen-Hong Tsang ◽  
Linbao Luo ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Si Substrate ◽  
Deep Ultraviolet

The broadband heterojunction photodetectors, exhibiting superior photoresponse performances ranged from deep ultraviolet to near-infrared, were made by growing a multilayered PtSe2 film directly onto Si.

Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes

2018 ◽  
Vol 5 (18) ◽  
pp. 1800662 ◽  
Author(s):  
Qiucheng Li ◽  
Qingqing Wu ◽  
Jing Gao ◽  
Tongbo Wei ◽  
Jingyu Sun ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ultraviolet Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hexagonal Boron Nitride ◽  
Light Emitting ◽  
Direct Growth ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Graphene-Ta2O5 Heterostructure Enabled High Performance, Deep-Ultraviolet to Mid-Infrared Photodetection

Nanoscale ◽  
2021 ◽  
Author(s):  
Vinh Ho ◽  
Yifei Wang ◽  
Michael Cooney ◽  
Nguyen Q Vinh
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Infrared Region ◽  
Temperature Sensitive ◽  
Mid Infrared ◽  
Significant Challenge ◽  
Deep Ultraviolet ◽  
Infrared Photodetection

Ultrafast, high sensitive, low cost photodetectors operating at room temperature sensitive from the deep-ultraviolet to mid-infrared region remain a significant challenge in optoelectronics. Achievements in traditional semiconductors using cryogenic operation...

scholarly journals Tunable relativistic quasiparticle electronic and excitonic behavior of the FAPb(I1−xBrx)3 alloy

2020 ◽  
Vol 22 (21) ◽  
pp. 11943-11955 ◽  
Author(s):  
Zeeshan Muhammad ◽  
Peitao Liu ◽  
Rashid Ahmad ◽  
Saeid Jalali Asadabadi ◽  
Cesare Franchini ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
High Performance ◽  
Material Design ◽  
Tandem Solar Cells ◽  
Excitonic Properties

The quasiparticle and excitonic properties of mixed FAPb(I1−xBrx)3 0 ≤ x ≤ 1 alloys are studied. We show that Br-doping provides an efficient and controllable way to tune the band gap and optical properties, beneficial for material design of high performance tandem solar cells.

MBE growth of wide band gap wurtzite MgZnO quasi-alloys with MgO/ZnO superlattices for deep ultraviolet optical functions

2005 ◽  
Vol 278 (1-4) ◽  
pp. 264-267 ◽  
Author(s):  
Shizuo Fujita ◽  
Hiroshi Tanaka ◽  
Shigeo Fujita
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Mbe Growth ◽  
Optical Functions ◽  
Deep Ultraviolet
Sign in / Sign up

Export Citation Format

Share Document