Enhancing entanglement of two-qubit states from amplitude damping channel using single-qubit unitary operation and local filtering operation

We propose a scheme to enhance entanglement from amplitude damping or correlated amplitude damping decoherence. We show that entanglement sudden death time can be prolonged by the initial single-qubit operation combined with local filtering operation. For the amplitude damping channel case, we give the optimal single-qubit operation for arbitrary pure state [Formula: see text]. For the correlated amplitude damping channel case, we find that single-qubit operation on the initial state can not only enhance the final entanglement but also avoid entanglement sudden death. Compared to the previous schemes, the optimal operations and local filtering operations used in our scheme are independent with the decay parameters of the environment.

Tripartite quantum operation sharing with six-qubit highly entangled state

A three-party scheme for sharing an arbitrary single-qubit operation on a distant target qubit is proposed by first utilizing a six-qubit genuinely entangled state presented by [Borras et al., J. Phys. A 40, 13407 (2007)]. The security of the scheme is simply analyzed and ensured. The essential role which the state in the given qubit distribution plays in the QOS task is revealed. The important features including the sharing determinacy and the sharer symmetry are identified. Moreover, the experimental implementation feasibility of the scheme is discussed and confirmed.

Four-party quantum operation sharing with composite quantum channel in Bell and Yeo–Chua product state

A four-party single-qubit operation sharing scheme is put forward by utilizing the Bell and Yeo–Chua product state in an entanglement structure as the composite quantum channel. Four features of the scheme are discussed and confirmed, including its determinacy, symmetry, and security as well as the scheme experimental feasibility. Moreover, some concrete comparisons between our present scheme and a previous scheme [H. Xing et al., Quantum Inf. Process. 13 (2014) 1553] are made from the aspects of quantum and classical resource consumption, necessary operation complexity, and intrinsic efficiency. It is found that our present scheme is more superior than that one. In addition, the essential reason why the employed state in the entanglement structure is applicable for sharing an arbitrary single-qubit operation among four parties is revealed via deep analyses. With respect to the essential reason, the capacity of the product state in quantum operation sharing (QOS) is consequently shown by simple presenting the corresponding schemes with the state in other entanglement structures.

Coherent transfer of quantum information in a silicon double quantum dot using resonant SWAP gates

Spin-based quantum processors in silicon quantum dots offer high-fidelity single and two-qubit operation. Recently multi-qubit devices have been realized; however, many-qubit demonstrations remain elusive, partly due to the limited qubit-to-qubit connectivity. These problems can be overcome by using SWAP gates, which are challenging to implement in devices having large magnetic field gradients. Here we use a primitive SWAP gate to transfer spin eigenstates in 100 ns with a fidelity of $${\bar{F}}_{{\rm{SWAP}}}^{{\rm{(p)}}}=98 \%$$F¯SWAP(p)=98%. By swapping eigenstates we are able to demonstrate a technique for reading out and initializing the state of a double quantum dot without shuttling charges through the quantum dot. We then show that the SWAP gate can transfer arbitrary two-qubit product states in 300 ns with a fidelity of $${\bar{F}}_{{\rm{SWAP}}}^{{\rm{(c)}}}=84 \%$$F¯SWAP(c)=84%. This work sets the stage for many-qubit experiments in silicon quantum dots.

Defects in SiC for Quantum Computing

Many novel materials are being actively considered for quantum information science and for realizing high-performance qubit operation at room temperature. It is known that deep defects in wide-band gap semiconductors can have spin states and long coherence times suitable for qubit operation. We theoretically investigate from ab-initio density functional theory (DFT) that the defect states in the hexagonal silicon carbide (4H-SiC) are potential qubit materials. The DFT supercell calculations were performed with the local-orbital and pseudopotential methods including hybrid exchange-correlation functionals. Di-vacancies in SiC supercells yielded defect levels in the gap consisting of closely spaced doublet just above the valence band edge, and higher levels in the band gap. The divacancy with a spin state of 1 is charge neutral. The divacancy is characterized by C-dangling bonds and a Si-dangling bonds. Jahn-teller distortions and formation energies as a function of the Fermi level and single photon interactions with these defect levels will be discussed. In contrast, the anti-site defects where C, Si are interchanged have high formation energies of 5.4 eV and have just a single shallow defect level close to the valence band edge, with no spin. We will compare results including the defect levels from both the electronic structure approaches.