Oxygen Atmosphere Annealing Effect on the Thermal Stability of TiO2-x Based Films for Shutter-Less Infrared Image Sensors

2018 ◽  
Vol 775 ◽  
pp. 272-277
Author(s):  
Y. Ashok Kumar Reddy ◽  
In Ku Kang ◽  
Young Bong Shin ◽  
Hee Chul Lee
Keyword(s):  
Thermal Stability ◽  
Infrared Image ◽  
Image Sensor ◽  
Oxygen Atmosphere ◽  
High Resistivity ◽  
Rutile Structure ◽  
Good Thermal Stability ◽  
Oxygen Gas ◽  
Infrared Image Sensors ◽  
Thermal Stability Of

In the present study, we examine the thermal stability of TiO2-x (TiO) and Nb:TiO2-x (TNO) films at different exposing temperatures for the as-deposited and oxygen-atmosphere annealed samples. In order to attain the good thermal stability characteristics, lower resistance of the TiO and TNO samples were annealed in oxygen gas atmosphere at a high flow rate (5 lit/min) of oxygen gas and annealing time (25 min). From the structural studies, it can be confirmed that the annealing process gives the incorporation of oxygen atoms to its vacant sites and the phase transition improvement from the amorphous to rutile structure. The annealed samples reveal the high resistivity and temperature coefficient of resistance (TCR) values than as-deposited samples. Furthermore, it was confirmed that the annealed samples exhibits a significant improvement of thermal stability compared to the as-deposited samples. As a result, the annealed TNO sample exhibits outstanding thermal stability as well as better bolometric performance. Consequently, this study reveals that the annealed TNO sample is appropriate for shutter-less infrared image sensor devices.

An Optimization Study of Thermal Stability of W/GaAs Schottky Gates

1993 ◽  
Vol 300 ◽  
Author(s):  
Marcio Favoretio ◽  
Jacobus W. Swart
Keyword(s):  
Thermal Stability ◽  
Schottky Diodes ◽  
High Resistivity ◽  
Electrical Characteristics ◽  
Rf Power ◽  
Good Thermal Stability ◽  
Deposition Parameters ◽  
Optimization Study ◽  
Film Characteristics ◽  
Thermal Stability Of

ABSTRACTThis paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100°C.

High partial thermal conductivity of luminescence sites: a crucial factor for reducing the heat-induced lowering of the luminescence efficiency

2021 ◽  
Author(s):  
Ni Luo ◽  
Jing Xu ◽  
Xiyue Cheng ◽  
ZhenHua Li ◽  
Yidong Huang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Stability ◽  
Practical Applications ◽  
Good Thermal Stability ◽  
The Past ◽  
Luminescence Efficiency ◽  
Thermal Stability Of

The good thermal stability of a phosphor is crucial for its practical applications. Unfortunately, in the past decades, only Gurney-Mott equation was available to describe the relation between the luminescence...

Thermal Stability of Solid Aluminum Electrolytic Capacitors with Conductive Polyaniline Counter Electrode

2012 ◽  
Vol 512-515 ◽  
pp. 1018-1021
Author(s):  
Xu Fei Zhu ◽  
Long Fei Jiang ◽  
Wei Xing Qi ◽  
Chao Lu ◽  
Ye Song
Keyword(s):  
Thermal Stability ◽  
Counter Electrode ◽  
Electrolytic Capacitor ◽  
Aluminum Electrolytic Capacitor ◽  
Dodecylbenzenesulfonic Acid ◽  
Excellent Thermal Stability ◽  
High Frequencies ◽  
Solid Aluminum ◽  
Good Thermal Stability ◽  
Thermal Stability Of

To overcome the risk of electrolyte leakage and the shortcoming of higher impedance at high frequencies for the conventional aluminum electrolytic capacitor impregnated with electrolyte solutions, solid aluminum electrolytic capacitor employing conducting polyaniline (PANI) as a counter electrode was developed. The as-fabricated solid capacitors have very low impedances at high frequencies and excellent thermal stability. The superior performances can be ascribed to high conductivity and good thermal stability of the camphorsulfonic acid (CSA)-dodecylbenzenesulfonic acid (DBSA) co-doped PANI.

Synthesis and Application of a Novel Intumescent Flame Retardant Containing Ferrocenyl

2014 ◽  
Vol 1033-1034 ◽  
pp. 931-936
Author(s):  
Cong Yan Chen ◽  
Rui Lan Fan ◽  
Guan Qun Yun
Keyword(s):  
Thermal Stability ◽  
Flame Retardant ◽  
Flame Retardants ◽  
Intumescent Flame Retardant ◽  
Limiting Oxygen Index ◽  
Good Thermal Stability ◽  
H Nmr ◽  
Positive Effect ◽  
Thermal Stability Of ◽  
Phosphate Groups

A novel intumescent flame retardant (IFR) containing ferrocene and caged bicyclic phosphate groups, 1-oxo-4-[4'-(ferrocene carboxylic acid phenyl ester)] amide-2, 6, 7-trioxa-1-phosphabicyclo- [2.2.2] octane (PFAM), was successfully synthesized. The synthesized PFAM were added to flammable polyurethane (PU) as flame retardants and smoke suppressants. The structure of PFAM was characterized by Fourier transform infrared spectroscopy (FTIR), nuclear magnetic resonance (1H NMR) and elemental analysis. Thermal stability of PFAM was tested by themogravimetric analysis (TGA). The results revealed that PFAM had good thermal stability and high char weight, the char weight up to 54% at 600 °C. Flammability properties of PU/PFAM composites were investigated by limiting oxygen index (LOI) test and UL-94 test, respectively. The results of LOI tests showed that the addition of PFAM enhanced flame retardancy of PU. When the content of PFAM reaches to 3%, the LOI value is 22.2. The morphologies of the char for PU and PU/3% PFAM composite can be obtained after LOI testing were examined by SEM. The results demonstrated that PFAM could promote to form the compact and dense intumescent char layer. Experiments showed that, the PFAM application of polyurethane showed positive effect.

scholarly journals Electrospun Silk-Boron Nitride Nanofibers with Tunable Structure and Properties

Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1093
Author(s):  
Ye Xue ◽  
Xiao Hu
Keyword(s):  
Thermal Stability ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Environmental Research ◽  
Strong Interactions ◽  
Helical Structures ◽  
Scanning Calorimetry ◽  
Modulated Differential Scanning Calorimetry ◽  
Good Thermal Stability ◽  
Thermal Stability Of

In this study, hexagonal boron nitride (h-BN) nanosheets and Bombyx mori silk fibroin (SF) proteins were combined and electrospun into BNSF nanofibers with different ratios. It was found that the surface morphology and crosslinking density of the nanofibers can be tuned through the mixing ratios. Fourier transform infrared spectroscopy study showed that pure SF electrospun fibers were dominated by random coils and they gradually became α-helical structures with increasing h-BN nanosheet content, which indicates that the structure of the nanofiber material is tunable. Thermal stability of electrospun BNSF nanofibers were largely improved by the good thermal stability of BN, and the strong interactions between BN and SF molecules were revealed by temperature modulated differential scanning calorimetry (TMDSC). With the addition of BN, the boundary water content also decreased, which may be due to the high hydrophobicity of BN. These results indicate that silk-based BN composite nanofibers can be potentially used in biomedical fields or green environmental research.

Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H2 treatment

2013 ◽  
Vol 579 ◽  
pp. 90-93
Author(s):  
Xin Cai ◽  
Hongwei Liang ◽  
Yuanda Liu ◽  
Rensheng Shen ◽  
Xiaochuan Xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Pressure ◽  
High Resistivity ◽  
Thermal Stability Of

Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization

2007 ◽  
Vol 539-543 ◽  
pp. 3497-3502 ◽  
Author(s):  
J.P. Chu ◽  
C.H. Lin
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
The Other ◽  
Oxide Semiconductor ◽  
Good Thermal Stability ◽  
Cu Films ◽  
Pure Cu ◽  
Thermal Stability Of

Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0), Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared by magnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMS depth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stability of these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electrical property measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ-cm, are seen for Cu(W) film, which is lower than the other films. An evaluation of the leakage current characteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates that Cu with dilute tungsten is more stable than the other films studied. These results further indicate that the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pure Cu films. Therefore, the film is suitable for the future barrierless metallization.

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