Partition functions of the tensionless string

We consider string theory on AdS3× S3× 𝕋4 in the tensionless limit, with one unit of NS-NS flux. This theory is conjectured to describe the symmetric product orbifold CFT. We consider the string on different Euclidean backgrounds such as thermal AdS3, the BTZ black hole, conical defects and wormhole geometries. In simple examples we compute the full string partition function. We find it to be independent of the precise bulk geometry, but only dependent on the geometry of the conformal boundary. For example, the string partition function on thermal AdS3 and the conical defect with a torus boundary is shown to agree, thus giving evidence for the equivalence of the tensionless string on these different background geometries. We also find that thermal AdS3 and the BTZ black hole are dual descriptions and the vacuum of the BTZ black hole is mapped to a single long string winding many times asymptotically around thermal AdS3. Thus the system yields a concrete example of the string-black hole transition. Consequently, reproducing the boundary partition function does not require a sum over bulk geometries, but rather agrees with the string partition function on any bulk geometry with the appropriate boundary. We argue that the same mechanism can lead to a resolution of the factorization problem when geometries with disconnected boundaries are considered, since the connected and disconnected geometries give the same contribution and we do not have to include them separately.

Measuring the Ultrafast Spectral Diffusion Dynamics of Colloidal CdSe Nanomaterials

We use ultrafast coherent two-dimensional electronic spectroscopy (2DES) to study the ultrafast spectral diffusion dynamics of colloidal CdSe quantum dots (QDs) and CdSe nanoplatelets (NPLs). The Center Line Slope (CLS) and Nodal Line Slope (NLS) techniques were employed to analyse the 2DES spectra. We show that no spectral diffusion dynamics occurs for the CdSe QDs. On the other hand, spectral diffusion was observed in the CdSe 5 mono-layers NPLs heavy-hole transition. The normalized Frequency Fluctuation Correlation Function (FFCF) of the CdSe NPLs heavy-hole transition was measured to have a major fast decay component at 140 fs.

Anisotropic Emission in Strain-Balanced Quantum Well Solar Cells

Strain-balanced quantum well solar cells (SB-QWSC) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a pin device. The strain-balanced quantum well solar cell benefits from a fundamental efficiency enhancement due to anisotropic emission from the quantum wells. This anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. We have also demonstrated that the photo-generated carriers can escape from the QWs with near unity efficiency, via a thermally-assisted tunneling process, because gain is several orders greater than radiative recombination.

Uncorrelated electron-hole transition Energy in GaN│InGaN│GaN Spherical QDQW Nanoparticles

The electron (hole) energy and uncorrelated \(1S_e - 1S_{h}\) electron-hole transition in Core(GaN)| well(In\(_x\)Ga\(_{1 - x}\)N)| shell(GaN) spherical QDQW nanoparticles is investigated as a function of the inner and the outer radii. The calculations are performed within the framework of the effective-mass approximation and the finite parabolic potential confinement barrier in which two confined parameters are taking account. The Indium composition effect is also investigated. A critical value of the outer and the inner ratio is obtained which constitutes the turning point of two indium composition behaviors.