CVD synthesis of nanometer SiC coating on diamond particles

Author(s):  
Xutong Zheng ◽  
Yongsheng Liu ◽  
Yejie Cao ◽  
Jing Wang ◽  
Yunhai Zhang
Metals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 196
Author(s):  
Yaqiang Li ◽  
Hongyu Zhou ◽  
Chunjing Wu ◽  
Zheng Yin ◽  
Chang Liu ◽  
...  

The coefficients of thermal expansion (CTE) and thermal conductivity (TC) are important for heat sink applications, as they can minimize stress between heat sink substrates and chips and prevent failure from thermal accumulation in electronics. We investigated the interface behavior and manufacturing of diamond/Cu composites and found that they have much lower TCs than copper due to their low densities. Most defects, such as cavities, form around diamond particles, substantially decreasing the high TC of diamond reinforcements. However, the measurement results for the Cu-coated diamond/Cu composites are unsatisfactory because the nanosized copper layer on the diamond surface grew and spheroidized at elevated sintering temperatures. Realizing ideal interfacial bonding between a copper matrix and diamond particles is difficult. The TC of the 40 vol.% Ti-coated diamond/Cu composite is 475.01 W m−1 K−1, much higher than that of diamond/Cu and Cu-coated diamond/Cu composites under equivalent manufacturing conditions. The minimally grown titanium layer retained its nanosized and was consistent with the sintering temperature. Depositing a nanosized titanium layer on a diamond surface will strengthen interfacial bonding through interface reactions among the copper matrix, nanosized titanium layer and diamond particles, reducing the interfacial thermal resistance and exploiting the high TC of diamond particles, even if defects from powder metallurgy remain. These results provide an important experimental and theoretical basis for manufacturing diamond/Cu composites for heat sink applications.


2011 ◽  
Vol 47 (27) ◽  
pp. 7656 ◽  
Author(s):  
Amy Moore ◽  
Verónica Celorrio ◽  
María Montes de Oca ◽  
Daniela Plana ◽  
Wiphada Hongthani ◽  
...  
Keyword(s):  

2017 ◽  
Vol 122 (3) ◽  
pp. 440-446 ◽  
Author(s):  
A. V. Voitylov ◽  
V. V. Voitylov ◽  
S. A. Klemeshev ◽  
M. P. Petrov ◽  
A. A. Trusov ◽  
...  

2012 ◽  
Vol 512-515 ◽  
pp. 671-675 ◽  
Author(s):  
Ai Guo Zhou ◽  
Liang Li ◽  
Tai Chao Su ◽  
Shang Sheng Li

Ti3SiC2, a ternary carbide, was proposed at this paper to use as the binder of polycrystalline diamonds to overcome the weaknesses of traditional metal binders and ceramic binders. Ti3SiC2was first reported to be in-situ synthesized under high pressure (4GPa) and at high temperature (1400°C) (HPHT) from the mixtures of Ti, Si and graphite powders or the mixture of Ti, SiC and graphite powders. Ti3SiC2-damond composites were also made at HPHT from the previous mixtures and diamond particles. TiCx, Ti5Si3Cxand TiSi2were main impurities and/or intermediate products of Ti3SiC2samples synthesized at HPHT. Ti3SiC2content increased as synthesized time increased from 10 min to 60 min. For as-synthesized composites, diamond particles were evenly distributed in matrix. The diamond particles are bonded well with the matrix by three types of interface.


2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Yushen Wang ◽  
Wei Xiong ◽  
Danna Tang ◽  
Liang Hao ◽  
Zheng Li ◽  
...  

Purpose Traditional simulation research of geological and similar engineering models, such as landslides or other natural disaster scenarios, usually focuses on the change of stress and the state of the model before and after destruction. However, the transition of the inner change is usually invisible. To optimize and make models more intelligent, this paper aims to propose a perceptible design to detect the internal temperature change transformed by other energy versions like stress or torsion. Design/methodology/approach In this paper, micron diamond particles were embedded in 3D printed geopolymers as a potential thermal sensor material to detect the inner heat change. The authors use synthetic micron diamond powder to reinforced the anti-corrosion properties and thermal conductivity of geopolymer and apply this novel geopolymer slurry in the direct ink writing (DIW) technique. Findings As a result, the addition of micron diamond powder can greatly influence the rheology of geopolymer slurry and make the geopolymer slurry extrudable and suitable for DIW by reducing the slope of the viscosity of this inorganic colloid. The heat transfer coefficient of the micron diamond (15 Wt.%)/geopolymer was 50% higher than the pure geopolymer, which could be detected by the infrared thermal imager. Besides, the addition of diamond particles also increased the porous rates of geopolymer. Originality/value In conclusion, DIW slurry deposition of micron diamond-embedded geopolymer (MDG) composites could be used to manufacture the multi-functional geological model for thermal imaging and defect detection, which need the characteristic of lightweight, isolation, heat transfer and wave absorption.


2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.


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