INFLUENCE OF THE SEMICONDUCTOR CONDUCTIVITY ON THE VALUE OF THE SCHOTTKY BARRIER

В данной работе исследовано влияние проводимости полупроводника на Барьер Шотки в контакте металл полупроводник. В качестве объектов исследования выбраны контакты с алюминием следующих полупроводников: арсенида индия(InAs), арсенида галлия (GaAs)антимонида индия(InSb) и сульфида кадмия(CdS). Выбор этих кристаллов связан с тем, что ширина запрещенной зоны этих полупроводников возрастает от Еg = 0,18 эВ у арсенида индия до Еg = 2,53 эВ у сульфида кадмия, что соответствует поставленной задаче в данной работе. In this paper, the influence of the conductivity of a semiconductor on the Schottky Barrier in the metal-semiconductor contact is investigated. Contacts with aluminum of the following semiconductors were selected as objects of research: indium arsenide(InAs), gallium arsenide (GaAs), indium antimonide(InSb), and cadmium sulfide(CDs). The choice of these crystals is due to the fact that the band gap of these semiconductors increases from U = 0.18 eV for indium arsenide to U =eV for cadmium sulfide, which corresponds to the task in this paper.

SEMICONDUCTOR CONDUCTIVITY

In given article has been expressed solids, free carriers during their motion continuously experience collisions with atoms and ions of impurities and various defects, as a result, free carriers scatter as well. KEY WORDS: semiconductor, conductivity, source, ion, experience, atoms.

Electrophysical characteristics of nanodimensional cobalte-cuprate-manganite LaNa2CoCuMnO6 and nickelite-cuprate-manganite LaNa2NiCuMnO6

The temperature dependences of the electric capacity, dielectric constant and electrical resistance of cobaltecuprate-manganite of lanthanum and sodium of LaNa2CoCuMnO6 and nickelite-cuprate-manganite of lanthanum and sodium of LaNa2NiCuMnO6 were investigated on the LCR-800 serial device (manufactured by Taiwan) at the operating frequencies of 1 kHz, 5 kHz, and 10 kHz in interval of 293–483 K through 10 K continuously in dry air. It was determined that LaNa2CoCuMnO6 in interval of 293–483 K shows the semiconductor conductivity. A band gap ( Е) is 0.54eV. The compound has the high values of the dielectric constant, which are equal 2.17106 (1 kHz), 2.31105 (5 kHz), 8.22104 (10 kHz) at 293 K and 8.49108 (5 kHz), 7.87107 (10 kHz) at 483 K. LaNa2NiCuMnO6 in interval of 293–483 K demonstrates the semiconductor conductivity ( Е = 0.48 eV), at 433–443 K — the metallic conductivity and at 453–483 K — the semiconductor conductivity ( Е = 2.33 eV).The values of the dielectric constant are 4.97103 (1 kHz), 9.2102 (5 kHz), 5.1101 (10 kHz) at 293 K and 1.02106 (1 kHz), 1.98105 (5 kHz) and 9.76104 (10 kHz) at 483 K. The compounds can be classified as the narrow-band gap semiconductors and they are of interest for the semiconductor and microcapacitor technologies.

Molecular Dynamics Analysis of SiC Single Crystal Materials

SiC is modeled as a new generation of semiconductor materials because of its excellent properties. The 6H-SiC is modeled by Materials Studio. The band and state density of 6H-SiC are analyzed. In addition, 6H-SiC Substrate, the AL element doping, from the microscopic mechanism, analyzed the 6H-SiC semiconductor conductivity.

A Density Functional Theory Study on the Ultra Long Single Walled Armchair (3, 3) (Bn)Xcy Nanotubes

The single walled armchair (3,3) (BN)xCy nanotubes with different ratios of B, C and N atoms were studied with density functional theory of B3LYP/3-21G(d) combined with the periodic boundary conditions in simulating the ultra long tube model. Different types of twelve models were examined and the diameter, energy, energy gaps and the band structures were obtained. The energy gaps were within 0.203eV to 2.620eV showing semiconductor conductivity. Results show that the energy gap and the band structure depend on both the atom ratio and arrangement.