Aluminum Oxide and Silicon Nitride Thin Films as Anti-Corrosion Layers

2010 ◽  
pp. 123-134 ◽  
Author(s):  
C. Qu ◽  
P. Li ◽  
J. Fan ◽  
D. Edwards ◽  
W. Schulze ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Aluminum Oxide

scholarly journals Synthesis of textured films of hexagonal barium ferrite on Al2O3/Si3N4 amorphous structure

2021 ◽  
Vol 1198 (1) ◽  
pp. 012015
Author(s):  
A. Yu. Mironovich ◽  
V.G. Kostishyn ◽  
I.M. Isaev
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Aluminum Oxide ◽  
Mechanical Stress ◽  
Barium Ferrite ◽  
Barium Hexaferrite ◽  
Amorphous Structure ◽  
Structural Studies ◽  
Hexagonal Barium Ferrite ◽  
Amorphous Surface

Abstract In this work structural studies of BaFe12O19/Al2O3/Si3N4 thin films with different thicknesses of aluminum oxide and silicon nitride are represented. It is shown that barium hexaferrite crystallizes on the amorphous surface of aluminum oxide with spontaneously formed (00l) uniaxial texture. Microstructural differences in BaFe12O19 films were observed with varying of the thickness of amorphous sublayers, which is explained by the effect of mechanical stress.

Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride

2012 ◽  
Vol 51 (28) ◽  
pp. 6789 ◽  
Author(s):  
Jan Kischkat ◽  
Sven Peters ◽  
Bernd Gruska ◽  
Mykhaylo Semtsiv ◽  
Mikaela Chashnikova ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Optical Properties ◽  
Silicon Nitride ◽  
Aluminum Nitride ◽  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Mid Infrared ◽  
Infrared Optical Properties

Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride

2002 ◽  
Vol 751 ◽  
Author(s):  
Anindya Dasgupta ◽  
Abhijit Roy Chowdhuri ◽  
Christos G. Takoudis
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Aluminum Oxide ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Aluminum Silicate ◽  
Excess Oxygen ◽  
Silicon Substrates ◽  
Interfacial Layers ◽  
Film Substrate

ABSTRACTThin films of aluminum oxide were deposited on silicon nitride thin films using trimethylaluminum and oxygen at 0.5 Torr and 300 °C. Fourier transform infrared (FTIR) and x-ray photoelectron spectroscopic (XPS) analyses of these films showed no aluminum silicate phase at the film-substrate interface. The O/Al ratio in the deposited film was found to be higher than that in stoichiometric Al2O3 indicating the presence of excess oxygen. FTIR spectroscopy and XPS of the annealed samples did not show any formation of silicon oxide, oxynitride or silicate at the aluminum oxide/silicon nitride interface. In contrast to aluminum oxide on clean silicon substrates, using ultrathin silicon nitride as a barrier layer could prevent excess oxygen migration towards the Si substrate and formation of any interfacial layers.

Structure-property correlations in aluminum oxide thin films grown by reactive AC magnetron sputtering

2006 ◽  
Vol 201 (3-4) ◽  
pp. 1109-1116 ◽  
Author(s):  
Atul Khanna ◽  
Deepak G. Bhat ◽  
Adrian Harris ◽  
Ben D. Beake
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Aluminum Oxide ◽  
Structure Property ◽  
Oxide Thin Films ◽  
Property Correlations

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

2010 ◽  
Vol 518 (14) ◽  
pp. 3891-3893 ◽  
Author(s):  
J.C. Alonso ◽  
F.A. Pulgarín ◽  
B.M. Monroy ◽  
A. Benami ◽  
M. Bizarro ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Nanoclusters

In situ IR observation of photo-chemically deposited silicon nitride thin films

1991 ◽  
Vol 48-49 ◽  
pp. 409-413 ◽  
Author(s):  
T. Wadayama ◽  
T. Hihara ◽  
A. Hatta ◽  
W. Suëtaka
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
In Situ Ir

Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

2014 ◽  
Vol 116 (4) ◽  
pp. 043506 ◽  
Author(s):  
F. Volpi ◽  
M. Braccini ◽  
A. Devos ◽  
G. Raymond ◽  
A. Pasturel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Mechanical Behaviour ◽  
Stressed Silicon

Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge

2001 ◽  
Vol 40 (Part 1, No. 6B) ◽  
pp. 4292-4298 ◽  
Author(s):  
Xue-Sen Wang ◽  
Zongquan Li ◽  
Lei Wang ◽  
Yanfang Hu ◽  
Guangjie Zhai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride
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