Plasma-Assisted Chemical Vapor Deposition of Fe: TiO2Films for Photoelectrochemical Hydrogen Production

Very recently, the septuple-atomic-layer, MoSi2N4 has been successfully synthesized by chemical vapor deposition method. However, pristine MoSi2N4 exhibits some shortcomings, including poor visible-light harvesting and low separation rate of photo-excited...

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One-step chemical vapor deposition of MoS2 nanosheets on SiNWs as photocathodes for efficient and stable solar-driven hydrogen production

Nanoscale ◽

10.1039/c7nr09235k ◽

2018 ◽

Vol 10 (7) ◽

pp. 3518-3525 ◽

Cited By ~ 28

Author(s):

Die Hu ◽

Jie Xiang ◽

Qingwei Zhou ◽

Shaoqiang Su ◽

Zongbao Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Hydrogen Production ◽

Vapor Deposition ◽

Chemical Vapor ◽

Mos2 Nanosheets ◽

One Step

A one-step chemical vapor deposition for the synthesis of SiNWs/MoS2 photocathodes for efficient and stable solar-driven hydrogen production.

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Hydrogen Production by Steam Reforming of Methane in Biogas Using Membrane Reactors with Dimethoxydimethylsilane-derived Silica Membranes Prepared by Chemical Vapor Deposition

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN ◽

10.1252/jcej.21we016 ◽

2021 ◽

Vol 54 (7) ◽

pp. 387-394

Author(s):

Kazuki Akamatsu ◽

Masato Suzuki ◽

Xiao-lin Wang ◽

Shin-ichi Nakao

Keyword(s):

Chemical Vapor Deposition ◽

Hydrogen Production ◽

Steam Reforming ◽

Vapor Deposition ◽

Chemical Vapor ◽

Membrane Reactors ◽

Silica Membranes ◽

Steam Reforming Of Methane

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In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137653 ◽

1995 ◽

Vol 53 ◽

pp. 256-257

Author(s):

J. Drucker ◽

R. Sharma ◽

J. Kouvetakis ◽

K.H.J. Weiss

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Effect ◽

Line Drawing ◽

Chemical Vapor ◽

Environmental Cell ◽

Engineering Changes ◽

Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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