Optimization of Thermoelectric Properties in Boron Carbide Thin Films Prepared by Ion-Beam Evaporation

2013 ◽  
pp. 199-206
Author(s):  
H. Suematsu ◽  
I. Ruiz ◽  
K. Kobayashi ◽  
M. Takeda ◽  
D. Shimbo ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Carbide ◽  
Thermoelectric Properties ◽  
Ion Beam

Thermoelectric properties of crystallized boron carbide thin films prepared by ion-beam evaporation

2002 ◽  
Vol 407 (1-2) ◽  
pp. 132-135 ◽  
Author(s):  
H. Suematsu ◽  
K. Kitajima ◽  
I. Ruiz ◽  
K. Kobayashi ◽  
M. Takeda ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Carbide ◽  
Thermoelectric Properties ◽  
Ion Beam

scholarly journals Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation

2005 ◽  
Vol 6 (2) ◽  
pp. 181-184 ◽  
Author(s):  
Syunsuke Sasaki ◽  
Masatoshi Takeda ◽  
Keisuke Yokoyama ◽  
Takahiro Miura ◽  
Tsuneo Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Boron Carbide ◽  
Thermoelectric Properties ◽  
Ion Beam ◽  
Thermoelectric Device

scholarly journals Tuning the Electrical and Thermoelectric Properties of N Ion Implanted SrTiO3 Thin Films and Their Conduction Mechanisms

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Anuradha Bhogra ◽  
Anha Masarrat ◽  
Ramcharan Meena ◽  
Dilruba Hasina ◽  
Manju Bala ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Temperature Regime ◽  
Electrical Transport ◽  
Ion Beam ◽  
Temperature Range ◽  
Conduction Mechanisms ◽  
Band Conduction

Abstract The SrTiO3 thin films were fabricated by pulsed laser deposition. Subsequently ion implantation with 60 keV N ions at two different fluences 1 × 1016 and 5 × 1016 ions/cm2 and followed by annealing was carried out. Thin films were then characterized for electronic structure, morphology and transport properties. X-ray absorption spectroscopy reveals the local distortion of TiO6 octahedra and introduction of oxygen vacancies due to N implantation. The electrical and thermoelectric properties of these films were measured as a function of temperature to understand the conduction and scattering mechanisms. It is observed that the electrical conductivity and Seebeck coefficient (S) of these films are significantly enhanced for higher N ion fluence. The temperature dependent electrical resistivity has been analysed in the temperature range of 80–400 K, using various conduction mechanisms and fitted with band conduction, near neighbour hopping (NNH) and variable range hopping (VRH) models. It is revealed that the band conduction mechanism dominates at high temperature regime and in low temperature regime, there is a crossover between NNH and VRH. The S has been analysed using the relaxation time approximation model and dispersive transport mechanism in the temperature range of 300–400 K. Due to improvement in electrical conductivity and thermopower, the power factor is enhanced to 15 µWm−1 K−2 at 400 K at the higher ion fluence which is in the order of ten times higher as compared to the pristine films. This study suggests that ion beam can be used as an effective technique to selectively alter the electrical transport properties of oxide thermoelectric materials.

Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

2014 ◽  
Vol 562 ◽  
pp. 181-184 ◽  
Author(s):  
Zhuang-hao Zheng ◽  
Ping Fan ◽  
Jing-ting Luo ◽  
Xing-min Cai ◽  
Guang-xing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Bismuth Antimony ◽  
Beam Sputtering

The thermoelectric properties and crystallography of Bi‐Sb‐Te‐Se thin films grown by ion beam sputtering

1993 ◽  
Vol 73 (3) ◽  
pp. 1252-1260 ◽  
Author(s):  
H. Noro ◽  
K. Sato ◽  
H. Kagechika
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

The influence of heat treatments on the thermoelectric properties of copper selenide thin films prepared by ion beam sputtering deposition

2016 ◽  
Vol 658 ◽  
pp. 880-884 ◽  
Author(s):  
Ya-dan Li ◽  
Ping Fan ◽  
Zhuang-hao Zheng ◽  
Jing-ting Luo ◽  
Guang-xing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Ion Beam ◽  
Heat Treatments ◽  
Copper Selenide ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

scholarly journals Thermoelectric Properties of CoSb3 Thin Films Prepared by Ion-Beam Sputtering

2000 ◽  
Vol 64 (5) ◽  
pp. 351-354 ◽  
Author(s):  
Yuichi Yamashita ◽  
Toshiyuki Matsui ◽  
Kenji Morii
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Thermoelectric Properties of Zn-Sb Thin Films Grown by Ion Beam Sputtering

2012 ◽  
Vol 538-541 ◽  
pp. 154-157
Author(s):  
Peng Juan Liu ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Dong Ping Zhang ◽  
Xing Min Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Ion Beam ◽  
Composition Analysis ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Sputter Deposited

Antimony (Sb) and zinc (Zn) bilayer was sputter-deposited at room temperature with various Zn contents by ion-beam sputtering and transformed into Antimony zinc after post thermal annealed at 573K for 60 min. A power factor of 6.18×10-4 W/mK2 at 473 K has been obtained when the sputtering time of the Zn was 20 minutes. The maximum Seebeck coefficient is 42.0 μVK-1. Composition analysis shows that the compound of SbZn is achieved and the small Seebeck coefficient is due to the deviation of stoichiometric.

scholarly journals Ion beam irradiation effect on thermoelectric properties of Bi2Te3 and Sb2Te3 thin films

2015 ◽  
Vol 358 ◽  
pp. 229-235 ◽  
Author(s):  
Gaosheng Fu ◽  
Lei Zuo ◽  
Jie Lian ◽  
Yongqiang Wang ◽  
Jie Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Ion Beam ◽  
Irradiation Effect ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Evolution of nanostructured single-phase CoSb3 thin films by low-energy ion beam induced mixing and their thermoelectric performance

2017 ◽  
Vol 19 (36) ◽  
pp. 24886-24895 ◽  
Author(s):  
Manju Bala ◽  
Srashti Gupta ◽  
Sanjeev K. Srivastava ◽  
Sankarakumar Amrithapandian ◽  
Tripurari S. Tripathi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermoelectric Properties ◽  
Single Phase ◽  
Ion Beam ◽  
Low Energy ◽  
Thermoelectric Performance

We report that a nanostructured CoSb3 thin film in a single phase can be synthesized by ion beam processing of Co/Sb bilayer thin films with better thermoelectric properties.

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