Effect of Processing Conditions on Electric and Dielectric Properties of Polymer‐Derived Sic Ceramics

2018 ◽  
pp. 165-174
Author(s):  
Chengying Xu
Keyword(s):  
Dielectric Properties ◽  
Processing Conditions ◽  
Sic Ceramics

Effects of Processing Conditions on the Dielectric Properties of CaCu3Ti4O12 Ceramics

2007 ◽  
pp. 210-212
Author(s):  
Chih Ming Wang ◽  
Kuo Sheng Kao ◽  
Shih Yuan Lin ◽  
Ying Chung Chen ◽  
Shang Chih Weng
Keyword(s):  
Dielectric Properties ◽  
Processing Conditions

Effect of Sintering Temperature on Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared by Mechanochemical Process

2014 ◽  
Vol 974 ◽  
pp. 157-161
Author(s):  
Masturah Mohamed ◽  
Mahesh Talari ◽  
Mohd Salleh Mohd Deni ◽  
Azlan Zakaria
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Sintering Temperature ◽  
Processing Conditions ◽  
Dielectric Measurements ◽  
Frequency Range ◽  
Grain Sizes ◽  
Barrier Capacitance ◽  
Different Temperatures ◽  
Increasing Temperature

CaCu3Ti4O12(CCTO) is well known to have colossal dielectric constant in the range of 105.It is widely accepted that this phenomenon may be attributed to internal layer barrier capacitance (IBLC) model. The dielectric properties of CCTO were reported to be strongly dependent on the processing conditions and grain size. In this work, CCTO samples with different grain sizes were produced by varying sintering temperature in order to investigate IBLC effect on dielectric properties of CCTO. The samples were sintered at four different temperatures, (T=1100°C, 1050°C, 1000°C and 950°C). Dielectric measurements were carried out for the samples in the frequency range of 102– 106Hz using impedance spectrometer. Electron micrographs showed that increasing temperature promoted the grain growth of CCTO while sintering. The internal crystalline defects are seen to play major role by increasing the grain conductivity in dipole formation and increased the dielectric constant of the samples.

The Dielectric Properties of the Piezoelectric PZT Thick Films

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3412-3417 ◽  
Author(s):  
F. Tang ◽  
M. Chinkhota ◽  
W. D. Brown ◽  
J. T. Wang
Keyword(s):  
Dielectric Properties ◽  
Smart Materials ◽  
Thick Films ◽  
Dielectric Constants ◽  
Experimental Results ◽  
Processing Conditions ◽  
Processing Methods ◽  
Smart Materials And Structures ◽  
Before And After ◽  
Piezoelectric Films

The piezoelectric PZT thick films were fabricated by spinning and painting techniques in our laboratory. The purpose of this paper is to study the characteristics of the piezoelectric films that could be used as the sensors in devices, smart materials and structures. The effects of processing methods and processing conditions on dielectric properties of thick films are investigated. The temperature dependencies of the dielectric constants and the loss of the sample are measured before and after poling. Our experimental results might provide a better understanding of the behavior of these types of materials regarding their applications in monitoring, active controlling and diagnosing.

Effects of Processing Conditions on the Dielectric Properties of CaCu3Ti4O12 Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 210-212 ◽  
Author(s):  
Chih Ming Wang ◽  
Kuo Sheng Kao ◽  
Shih Yuan Lin ◽  
Ying Chung Chen ◽  
Shang Chih Weng
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Processing Parameters ◽  
Processing Conditions ◽  
X Ray Diffraction ◽  
Conventional Solid State Reaction ◽  
X Ray ◽  
Dielectric Constant And Loss ◽  
Surface Microstructures ◽  
Xrd Patterns

In this present work, we adopt conventional solid state reaction techniques to obtain CaCu3Ti4O12 (CCTO) ceramics and the dielectric properties of polycrystalline CCTO samples sintered in the temperature range 900 − 1100°C were investigated. X-ray diffraction (XRD) patterns show no obvious change in crystal phase with various sintering temperature. However, experimental results show that the dielectric properties of CCTO ceramics are very sensitive to processing parameters and the dependence of dielectric constant and loss tangent of CCTO ceramic on processing can be obtained. The effect of sintering conditions on the surface microstructures and the electrical properties of CCTO ceramics are also discussed in this study.

Effect of PbO evaporation on the composition and dielectric properties of PbO-MgO-Nb2O5 based dielectrics

1990 ◽  
Vol 5 (3) ◽  
pp. 629-639 ◽  
Author(s):  
H. C. Ling ◽  
A. M. Jackson ◽  
M. F. Yan ◽  
W. W. Rhodes
Keyword(s):  
Phase Diagram ◽  
Weight Loss ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Ternary System ◽  
Stoichiometric Composition ◽  
Processing Conditions ◽  
Sintering Process ◽  
Rich Region ◽  
Optimum Processing

We have studied the weight loss during sintering and the resulting phase constituents and dielectric properties of a series of compositions in the lead-rich region of the PbO:MgO:Nb2O5 phase diagram near the stoichiometric composition of Pb(Mg1/3Nb2/3)O3 (PMN). While a ternary system of PbTiO3–Pb(CO1/3Nb2/3)O3–PMN was used, only the PMN component was varied in composition. The observed weight loss was ascribed to PbO evaporation from the nonstoichiometric PMN component. It was found that the sintered PMN compositions at about 1000°C correspond to the stoichiometric composition with varying amounts of excess MgO. These sintered compositions can be calculated by taking the Nb ion as the controlling cation in forming the PMN unit cell, from which the excess MgO can be determined. The excess PbO in the starting compositions, above the amount needed to form the sintered compositions of Pb(Mg1/3Nb2/3)O3 plus excess MgO, serves as a densification aid during the sintering process. Subsequently, the excess PbO is lost through evaporation. The peak dielectric constant of these compositions varies between 12000 and 18500, with the highest value attained in the sintered composition corresponding to stoichiometric PMN plus 0.229 mole of excess MgO. The optimum processing conditions for this composition are also identified.

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