Anomalous Channel-Length Dependence in Nanofluidic Osmotic Energy Conversion

Understanding the diffusive behavior of particles and large molecules in channels is of fundamental importance in biological and synthetic systems, such as channel proteins, nanopores, and nanofluidics. Although theoretical and...

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Channel length dependence of discrete dopant effects in narrow si nanowire transistors: A full 3D NEGF study

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5677945 ◽

2010 ◽

Author(s):

A. Martinez ◽

A. Asenov ◽

M. Aldegunde

Keyword(s):

Channel Length ◽

Si Nanowire ◽

Nanowire Transistors ◽

Length Dependence

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Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

Microelectronics Reliability ◽

10.1016/j.microrel.2019.113424 ◽

2019 ◽

Vol 100-101 ◽

pp. 113424 ◽

Cited By ~ 1

Author(s):

Hyeokjin Kim ◽

Giyoun Roh ◽

Young-Kyu Kwon ◽

Bongkoo Kang

Keyword(s):

Mechanical Stress ◽

Channel Length ◽

Stress Effect ◽

Strained Si ◽

Shallow Trench Isolation ◽

Length Dependence ◽

Trench Isolation

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(Invited) Channel Length Dependence of Mechanical Strain for Flexible (a-IGZO) TFT

ECS Meeting Abstracts ◽

10.1149/ma2018-02/36/1212 ◽

2018 ◽

Keyword(s):

Mechanical Strain ◽

Channel Length ◽

Length Dependence ◽

Igzo Tft

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Channel Length Dependence of the Body-Factor Effect in NMOS Devices

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ◽

10.1109/tcad.1983.1270015 ◽

1983 ◽

Vol 2 (1) ◽

pp. 2-4 ◽

Cited By ~ 5

Author(s):

M. Simard-Normandin

Keyword(s):

Channel Length ◽

The Body ◽

Length Dependence ◽

Factor Effect

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Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

IEEE Electron Device Letters ◽

10.1109/led.2009.2031418 ◽

2009 ◽

Vol 30 (11) ◽

pp. 1212-1214 ◽

Cited By ~ 36

Author(s):

S. Poli ◽

M.G. Pala

Keyword(s):

Silicon Nanowire ◽

Channel Length ◽

Length Dependence ◽

Low Field ◽

Field Mobility ◽

Low Field Mobility

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Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Journal of Applied Physics ◽

10.1063/1.4922714 ◽

2015 ◽

Vol 117 (23) ◽

pp. 234502 ◽

Cited By ~ 8

Author(s):

Jae Gwang Um ◽

Mallory Mativenga ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Channel Length ◽

Oxide Thin Film ◽

Negative Bias ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Length Dependence ◽

Indium Gallium

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Channel-length dependence of substrate current characteristic of LDD MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22213 ◽

1985 ◽

Vol 32 (9) ◽

pp. 1885-1887

Author(s):

S.N. Shabde ◽

F. Barman ◽

A. Bhattacharyya

Keyword(s):

Channel Length ◽

Current Characteristic ◽

Length Dependence ◽

Substrate Current

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Temperature and channel-length dependence of impact ionization in p-channel MOSFETs

Proceedings of 1994 VLSI Technology Symposium ◽

10.1109/vlsit.1994.324425 ◽

2002 ◽

Cited By ~ 8

Author(s):

M. Mastrapasqua ◽

J. Bude ◽

M. Pinto ◽

L. Manchanda ◽

K.F. Lee

Keyword(s):

Impact Ionization ◽

Channel Length ◽

Length Dependence

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