Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

2019 ◽  
Vol 100-101 ◽  
pp. 113424 ◽  
Author(s):  
Hyeokjin Kim ◽  
Giyoun Roh ◽  
Young-Kyu Kwon ◽  
Bongkoo Kang
Keyword(s):  
Mechanical Stress ◽  
Channel Length ◽  
Stress Effect ◽  
Strained Si ◽  
Shallow Trench Isolation ◽  
Length Dependence ◽  
Trench Isolation

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1949-1952 ◽  
Author(s):  
Seonhaeng Lee ◽  
Dongwoo Kim ◽  
Cheolgyu Kim ◽  
Chiho Lee ◽  
Jeongsoo Park ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Channel Width ◽  
Device Performance ◽  
Shallow Trench Isolation ◽  
Stress Effects ◽  
Trench Isolation

Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs

2011 ◽  
Vol 88 (6) ◽  
pp. 882-887 ◽  
Author(s):  
Dongwoo Kim ◽  
Seonhaeng Lee ◽  
T.K. Oh ◽  
S.Y. Cha ◽  
S.J. Hong ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Shallow Trench Isolation ◽  
Trench Isolation

Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy

1999 ◽  
Vol 568 ◽  
Author(s):  
Hernan Rueda ◽  
James Slinkman ◽  
Dureseti Chidambarrao ◽  
Leon Moszkowicz ◽  
Phil Kaszuba ◽  
...  
Keyword(s):  
Finite Element ◽  
Work Function ◽  
Mechanical Stress ◽  
Mechanical Strain ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Shallow Trench Isolation ◽  
Force Microscopy ◽  
Trench Isolation

ABSTRACTmethod for characterizing the mechanical stress induced in silicon technology is described. Analysis by scanning Kelvin probe force microscopy (SKPM) coupled with finite-element (FE) mechanical strain simulations is performed. The SKPM technique detects variations in the semiconductor work function due to strain influences on the band gap. This technique is then used to analyze the strain induced by shallow trench isolation processes for electrical isolation. The SKPM measurements agree with the FE simulations qualitatively.

scholarly journals Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device

2008 ◽  
Vol 55 (6) ◽  
pp. 1558-1562 ◽  
Author(s):  
V. C. Su ◽  
James B. Kuo ◽  
I. S. Lin ◽  
Guan-Shyan Lin ◽  
David C. Chen ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Shallow Trench Isolation ◽  
Kink Effect ◽  
Trench Isolation
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