Highly Sensitive Temperature Sensor: Ligand‐Treated Ag Nanocrystal Thin Films on PDMS with Thermal Expansion Strategy

The purpose of this paper is to show both theoretically and experimentally the feasibility of the photothermal surface-deformation (PTD) technique for a highly sensitive, completely contactless detection, as well as a lateral and depth-resolved localization, of absorption in optical thin films. Peculiarities in the interpretation of the measuring signal, such as the influence of the thermal-expansion coefficient of the substrate and the focal diameter of the heating beam, have been pointed out.As a relevant example, the absorption of evaporated ZrO2, single layers on BK 7 substrates has been measured at λ = 515 nm. Their bulk absorption is shown to be strongly influenced by both deposition parameters and the baking procedure.

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A highly sensitive and precise temperature sensor based on optoelectronic oscillator

Optics Communications ◽

10.1016/j.optcom.2020.126625 ◽

2021 ◽

Vol 483 ◽

pp. 126625

Author(s):

Luoqiu Xu ◽

Xiao Hu ◽

Yuguang Zhang ◽

Jinqiao Yi ◽

Yu Yu ◽

...

Keyword(s):

Temperature Sensor ◽

Optoelectronic Oscillator ◽

Highly Sensitive

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Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽

10.3390/coatings11020153 ◽

2021 ◽

Vol 11 (2) ◽

pp. 153

Author(s):

Chuen-Lin Tien ◽

Tsai-Wei Lin

Keyword(s):

Thin Films ◽

Thermal Expansion ◽

Thermal Stress ◽

Young’S Modulus ◽

Thermal Expansion Coefficient ◽

Expansion Coefficient ◽

Young's Modulus ◽

Heating Temperature ◽

Glass Substrates ◽

Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

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Highly Sensitive Temperature Sensor Based on Surface Plasmon Resonance in a Liquid-filled Hollow-core Negative-curvature Fiber

Optik ◽

10.1016/j.ijleo.2021.166970 ◽

2021 ◽

pp. 166970

Author(s):

Ying Han ◽

Lin Gong ◽

Fanchao Meng ◽

Hailiang Chen ◽

Yan Wang ◽

...

Keyword(s):

Surface Plasmon Resonance ◽

Surface Plasmon ◽

Plasmon Resonance ◽

Temperature Sensor ◽

Negative Curvature ◽

Hollow Core ◽

Highly Sensitive

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Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

MRS Proceedings ◽

10.1557/proc-546-103 ◽

1998 ◽

Vol 546 ◽

Cited By ~ 7

Author(s):

V. Ziebartl ◽

O. Paul ◽

H. Baltes

Keyword(s):

Thin Films ◽

Finite Element ◽

Thermal Expansion ◽

Silicon Nitride ◽

Excellent Agreement ◽

Energy Minimization ◽

Coefficient Of Thermal Expansion ◽

Temperature Dependent ◽

Minimization Method ◽

Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

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Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch

Applied Physics Letters ◽

10.1063/1.5011394 ◽

2018 ◽

Vol 112 (4) ◽

pp. 042109 ◽

Cited By ~ 6

Author(s):

Khaled H. Khafagy ◽

Tarek M. Hatem ◽

Salah M. Bedair

Keyword(s):

Thin Films ◽

Thermal Expansion ◽

Thermal Expansion Coefficients ◽

High Thermal Expansion ◽

Expansion Coefficients

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Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

MRS Proceedings ◽

10.1557/proc-0914-f11-02 ◽

2006 ◽

Vol 914 ◽

Cited By ~ 3

Author(s):

George Andrew Antonelli ◽

Tran M. Phung ◽

Clay D. Mortensen ◽

David Johnson ◽

Michael D. Goodner ◽

...

Keyword(s):

Thin Films ◽

Thermal Expansion ◽

Coefficient Of Thermal Expansion ◽

Chemical Vapor ◽

Dielectric Materials ◽

Free Standing ◽

Dielectric Thin Films ◽

X Ray ◽

Chemical Vapor Deposited ◽

Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

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