Universal Patterning for 2D Van der Waals Materials via Direct Optical Lithography

2021 ◽  
pp. 2105302
Author(s):  
Seong Rae Cho ◽  
Seonghun Ahn ◽  
Seung Hyung Lee ◽  
Heonhak Ha ◽  
Tae Soo Kim ◽  
...  
2021 ◽  
pp. 2102917
Author(s):  
Ruijin Sun ◽  
Shifeng Jin ◽  
Jun Deng ◽  
Munan Hao ◽  
Xin Zhong ◽  
...  

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Qianfan Nie ◽  
Caifang Gao ◽  
Feng-Shou Yang ◽  
Ko-Chun Lee ◽  
Che-Yi Lin ◽  
...  

AbstractRecently, researchers have focused on optoelectronics based on two-dimensional van der Waals materials to realize multifunctional memory and neuron applications. Layered indium selenide (InSe) semiconductors satisfy various requirements as photosensitive channel materials, and enable the realization of intriguing optoelectronic applications. Herein, we demonstrate InSe photonic devices with different trends of output currents rooted in the carrier capture/release events under various gate voltages. Furthermore, we reported an increasing/flattening/decreasing synaptic weight change index (∆Wn) via a modulated gate electric field, which we use to imitate medicine-acting metaplasticity with effective/stable/ineffective features analogous to the synaptic weight change in the nervous system of the human brain. Finally, we take advantage of the low-frequency noise (LFN) measurements and the energy-band explanation to verify the rationality of carrier capture-assisted optoelectronics applied to neural simulation at the device level. Utilizing optoelectronics to simulate essential biomedical neurobehaviors, we experimentally demonstrate the feasibility and meaningfulness of combining electronic engineering with biomedical neurology.


2021 ◽  
Author(s):  
Yan Liang ◽  
Shiying Shen ◽  
Baibiao Huang ◽  
Ying Dai ◽  
Yandong Ma

2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional...


2021 ◽  
Author(s):  
Yani Zhang ◽  
Zhuo-ying Song ◽  
Dun Qiao ◽  
Xiaohui Li ◽  
Zhe Guang ◽  
...  

Abstract 2D van der Waals materials are crystals composed of atomic layers, which have atomic thickness scale layers and rich distinct properties, including ultrafast optical response, surface effects, light-mater interaction, small size effects, quantum effects and macro quantum tunnel effects. With the exploration of saturable absorption characteristic of 2D van der Waals materials, a series of potential applications of 2D van der Waals materials as high threshold, broadband and fast response saturable absorbers (SAs) in ultrafast photonics have been proposed and confirmed. Herein, the photoelectric characteristics, nonlinear characteristic measurement technique of 2D van der Waals materials and the preparation technology of SAs are systematically described. Furthermore, the ultrafast pulsed fiber lasers based on classical 2D van der Waals materials including graphene, Transition Metal Chalcogenides (TMCs), Topological Insulators (TIs) and Black Phosphorus (BP) have been fully summarized and analyzed. On this basis, opportunities and directions in this field, as well as the research results of ultrafast pulsed fiber lasers based on the latest 2D van der Waals materials (such as PbO, FePSe3, graphdiyne, bismuthene, Ag2S and MXene etc.), are reviewed and summarized.


Nanoscale ◽  
2019 ◽  
Vol 11 (30) ◽  
pp. 14113-14117 ◽  
Author(s):  
Mengfei Xue ◽  
Qi Zheng ◽  
Runkun Chen ◽  
Lihong Bao ◽  
Shixuan Du ◽  
...  

Near-field imaging of mid-infrared waveguide in SnSe2 slabs promotes two-dimensional van der Waals materials as building blocks for integrated MIR chips.


Author(s):  
Minwoong Joe ◽  
Pawan Srivastava ◽  
Budhi Singh ◽  
Hyobin Ahn ◽  
Changgu Lee

2021 ◽  
Vol 0 (0) ◽  
pp. 1-11
Author(s):  
ZHENG Jia-lu ◽  
◽  
◽  
DAI Zhi-gao ◽  
HU Guang-wei ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Andreas Hutzler ◽  
Birk Fritsch ◽  
Christian D. Matthus ◽  
Michael P. M. Jank ◽  
Mathias Rommel

Sign in / Sign up

Export Citation Format

Share Document