High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

Safe, light, and high-performance engineering structures may be generated by adopting composite materials with stable damage process (i.e., without catastrophic delamination). Interlayer hybrid composites may fail stably by suppressing catastrophic interlayer delamination. This paper provides a detailed analysis of delamination occurring in poly(acrylonitrile-butadiene-styrene) (ABS) or polystyrene (PS) film interleaved carbon-glass/epoxy hybrid composites. The ABS films toughened the interfaces of the hybrid laminates, generating materials with higher mode II interlaminar fracture toughness (GIIC), delamination stress (σdel), and eliminating the stress drops observed in the reference baseline material, i.e., without interleaf films, during tensile tests. Furthermore, stable behaviour was achieved by treating the ABS films in oxygen plasma. The mechanical performance (GIIC and σdel) of hybrid composites containing PS films, were initially reduced but increased after oxygen plasma treatment. The plasma treatment introduced O-C=O and O-C-O-O functional groups on the PS surfaces, enabling better epoxy/PS interactions. Microscopy analysis provided evidence of the toughening mechanisms, i.e., crack deflection, leading plasma-treated PS to stabilise delamination.

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Oxygen plasma treatment of high performance fibers for composites

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2003.12.004 ◽

2004 ◽

Vol 85 (1) ◽

pp. 81-87 ◽

Cited By ~ 120

Author(s):

G.M Wu

Keyword(s):

Plasma Treatment ◽

High Performance ◽

Oxygen Plasma ◽

Oxygen Plasma Treatment

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Thin-Film Transistors: High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment (Adv. Mater. 32/2016)

Advanced Materials ◽

10.1002/adma.201670223 ◽

2016 ◽

Vol 28 (32) ◽

pp. 6984-6984 ◽

Cited By ~ 5

Author(s):

Jaewoo Shim ◽

Aely Oh ◽

Dong-Ho Kang ◽

Seyong Oh ◽

Sung Kyu Jang ◽

...

Keyword(s):

Thin Film ◽

Plasma Treatment ◽

Thin Film Transistors ◽

High Performance ◽

Oxygen Plasma ◽

Oxygen Plasma Treatment

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Reactive oxygen plasma treatment of 3D-printed carbon electrodes towards high-performance electrochemical sensors

Sensors and Actuators B Chemical ◽

10.1016/j.snb.2021.130651 ◽

2021 ◽

Vol 347 ◽

pp. 130651 ◽

Cited By ~ 1

Author(s):

Jian F.S. Pereira ◽

Raquel G. Rocha ◽

Silvia V.F. Castro ◽

Afonso F. João ◽

Pedro H.S. Borges ◽

...

Keyword(s):

Plasma Treatment ◽

High Performance ◽

Oxygen Plasma ◽

Electrochemical Sensors ◽

Reactive Oxygen ◽

Carbon Electrodes ◽

Oxygen Plasma Treatment ◽

3D Printed

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High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.347-350.1535 ◽

2013 ◽

Vol 347-350 ◽

pp. 1535-1539

Author(s):

Jian Jun Zhou ◽

Liang Li ◽

Hai Yan Lu ◽

Ceng Kong ◽

Yue Chan Kong ◽

...

Keyword(s):

Plasma Treatment ◽

Breakdown Voltage ◽

Oxygen Plasma ◽

Cutoff Frequency ◽

Chemical Vapor ◽

Current Gain ◽

Organic Chemical ◽

Oxygen Plasma Treatment ◽

Gan Hemt ◽

High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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