Transparent ITiO film electrodes on polyethylene terephthalate by oxygen plasma treatment for high-performance flexible electroluminescence device

2018 ◽  
Vol 58 (SA) ◽  
pp. SAAB02 ◽  
Author(s):  
Somchai Arunrungrusmi ◽  
Pakpoom Chansri ◽  
Narong Mungkung
2018 ◽  
Vol 51 (36) ◽  
pp. 365101 ◽  
Author(s):  
Jinglin Wei ◽  
Zhiqiang Fang ◽  
Junbiao Peng ◽  
Wei Cai ◽  
Zhennan Zhu ◽  
...  

2016 ◽  
Vol 28 (32) ◽  
pp. 6985-6992 ◽  
Author(s):  
Jaewoo Shim ◽  
Aely Oh ◽  
Dong-Ho Kang ◽  
Seyong Oh ◽  
Sung Kyu Jang ◽  
...  

Polymers ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2834
Author(s):  
Salvatore Giacomo Marino ◽  
Florian Mayer ◽  
Alexander Bismarck ◽  
Gergely Czél

Safe, light, and high-performance engineering structures may be generated by adopting composite materials with stable damage process (i.e., without catastrophic delamination). Interlayer hybrid composites may fail stably by suppressing catastrophic interlayer delamination. This paper provides a detailed analysis of delamination occurring in poly(acrylonitrile-butadiene-styrene) (ABS) or polystyrene (PS) film interleaved carbon-glass/epoxy hybrid composites. The ABS films toughened the interfaces of the hybrid laminates, generating materials with higher mode II interlaminar fracture toughness (GIIC), delamination stress (σdel), and eliminating the stress drops observed in the reference baseline material, i.e., without interleaf films, during tensile tests. Furthermore, stable behaviour was achieved by treating the ABS films in oxygen plasma. The mechanical performance (GIIC and σdel) of hybrid composites containing PS films, were initially reduced but increased after oxygen plasma treatment. The plasma treatment introduced O-C=O and O-C-O-O functional groups on the PS surfaces, enabling better epoxy/PS interactions. Microscopy analysis provided evidence of the toughening mechanisms, i.e., crack deflection, leading plasma-treated PS to stabilise delamination.


2016 ◽  
Vol 28 (32) ◽  
pp. 6984-6984 ◽  
Author(s):  
Jaewoo Shim ◽  
Aely Oh ◽  
Dong-Ho Kang ◽  
Seyong Oh ◽  
Sung Kyu Jang ◽  
...  

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Wittawat Poonthong ◽  
Narong Mungkung ◽  
Somchai Arunrungrusmi ◽  
Toshifumi Yuji ◽  
Youl-Moon Sung

Thin films of indium zinc oxide (IZO) were deposited on polyethylene terephthalate (PET) substrate with varying plasma power (from 100 W to 300 W) using the radio-frequency (RF) magnetron sputtering technique and electroluminescence (EL) devices. The IZO films that were obtained from this process were treated with oxygen plasma powers using the plasma-enhanced chemical vapor deposition (PECVD) system. After this treatment, the microstructural, electrical, and optical properties of IZO films were observed and reported. The result showed that the IZO/PET films was fabricated at the lowest resistivity ( 2.83 × 10 − 3   Ω · cm ), while the optical characterization displayed the maximum transmittance of 95% in the visible region with a smooth morphology and good crystalline structured, affected by the 300 W of plasma power with the optimum carrier concentration ( 4.93 × 10 21   c m − 3 ) and hall mobility (42.12 cm2/V·sec), respectively. The luminance properties and the EL efficiency were also investigated and shown a 300 W highest point of plasma power with 84 cd/m2 and 0.924 lm/W. The film properties were found responsible for producing and improving the performance of IZO/PET substrate, suitable for displaying the devices.


2021 ◽  
Vol 347 ◽  
pp. 130651 ◽  
Author(s):  
Jian F.S. Pereira ◽  
Raquel G. Rocha ◽  
Silvia V.F. Castro ◽  
Afonso F. João ◽  
Pedro H.S. Borges ◽  
...  

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..


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