High-performance spin-coated aluminum oxide dielectric fabricated by a simple oxygen plasma-treatment process

2018 ◽  
Vol 51 (36) ◽  
pp. 365101 ◽  
Author(s):  
Jinglin Wei ◽  
Zhiqiang Fang ◽  
Junbiao Peng ◽  
Wei Cai ◽  
Zhennan Zhu ◽  
...  
2016 ◽  
Vol 28 (32) ◽  
pp. 6985-6992 ◽  
Author(s):  
Jaewoo Shim ◽  
Aely Oh ◽  
Dong-Ho Kang ◽  
Seyong Oh ◽  
Sung Kyu Jang ◽  
...  

Polymers ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2834
Author(s):  
Salvatore Giacomo Marino ◽  
Florian Mayer ◽  
Alexander Bismarck ◽  
Gergely Czél

Safe, light, and high-performance engineering structures may be generated by adopting composite materials with stable damage process (i.e., without catastrophic delamination). Interlayer hybrid composites may fail stably by suppressing catastrophic interlayer delamination. This paper provides a detailed analysis of delamination occurring in poly(acrylonitrile-butadiene-styrene) (ABS) or polystyrene (PS) film interleaved carbon-glass/epoxy hybrid composites. The ABS films toughened the interfaces of the hybrid laminates, generating materials with higher mode II interlaminar fracture toughness (GIIC), delamination stress (σdel), and eliminating the stress drops observed in the reference baseline material, i.e., without interleaf films, during tensile tests. Furthermore, stable behaviour was achieved by treating the ABS films in oxygen plasma. The mechanical performance (GIIC and σdel) of hybrid composites containing PS films, were initially reduced but increased after oxygen plasma treatment. The plasma treatment introduced O-C=O and O-C-O-O functional groups on the PS surfaces, enabling better epoxy/PS interactions. Microscopy analysis provided evidence of the toughening mechanisms, i.e., crack deflection, leading plasma-treated PS to stabilise delamination.


2019 ◽  
Vol 947 ◽  
pp. 96-100
Author(s):  
Chatpawee Hom-On ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Sakson Limwichean ◽  
Viyapol Patthanasetakul ◽  
...  

X-ray photoelectron spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) were used to analyse the effect of oxygen plasma treatment on properties of aluminum oxide thin films. The aluminum oxide films were fabricated using a reactive sputtering system. The as-deposited films were treated with oxygen plasma powered by an RF generator. During the plasma treatment, the pressures were set at 1 x 10-1 to 1x 10-2 mbar, while the RF supplied powers at 100 W and 200 W. It was observed that lower plasma powers and higher pressures resulted in smoother films. The O/Al ratio of the films were found to decrease with increasing plasma powers and pressures. The thickness and refractive index of the films were significantly affected by the oxygen plasma treatment process, which could be related to the change in films’ packing density and the etching at the surface.


2016 ◽  
Vol 28 (32) ◽  
pp. 6984-6984 ◽  
Author(s):  
Jaewoo Shim ◽  
Aely Oh ◽  
Dong-Ho Kang ◽  
Seyong Oh ◽  
Sung Kyu Jang ◽  
...  

2021 ◽  
Vol 347 ◽  
pp. 130651 ◽  
Author(s):  
Jian F.S. Pereira ◽  
Raquel G. Rocha ◽  
Silvia V.F. Castro ◽  
Afonso F. João ◽  
Pedro H.S. Borges ◽  
...  

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..


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