Field-Effect Transistors: Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition (Adv. Mater. 47/2017)

Advanced Materials ◽

10.1002/adma.201770334 ◽

2017 ◽

Vol 29 (47) ◽

pp. 1770334

Author(s):

Woojin Jeon ◽

Yeonchoo Cho ◽

Sanghyun Jo ◽

Ji-Hoon Ahn ◽

Seong-Jun Jeong

Keyword(s):

Atomic Layer Deposition ◽

Molybdenum Disulfide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Atomic Layer ◽

Wafer Scale ◽

Layer Deposition

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Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition

Advanced Materials ◽

10.1002/adma.201703031 ◽

2017 ◽

Vol 29 (47) ◽

pp. 1703031 ◽

Author(s):

Woojin Jeon ◽

Yeonchoo Cho ◽

Sanghyun Jo ◽

Ji-Hoon Ahn ◽

Seong-Jun Jeong

Keyword(s):

Atomic Layer Deposition ◽

Molybdenum Disulfide ◽

High Mobility ◽

Atomic Layer ◽

Wafer Scale ◽

Layer Deposition

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Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO2 thin films prepared by atomic layer deposition

Nanotechnology ◽

10.1088/1361-6528/abc98c ◽

2020 ◽

Vol 32 (8) ◽

pp. 085709

Author(s):

Se-Na Choi ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Gate Electrode ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Homogeneous dual-gate MoS2 field-effect transistors integrated by atomic layer deposition-based film synthesis

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-03113-3 ◽

2020 ◽

Vol 31 (7) ◽

pp. 5485-5491 ◽

Author(s):

Tao Chen ◽

Yang Wang ◽

Tianbao Zhang ◽

Hao Zhu ◽

Lin Chen ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition ◽

Dual Gate ◽

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Atomic layer deposition effect on the electrical properties of Al2O3-passivated PbS quantum dot field-effect transistors

Applied Physics Letters ◽

10.1063/1.4914304 ◽

2015 ◽

Vol 106 (9) ◽

pp. 093507 ◽

Author(s):

Hye-Mi So ◽

Hyekyoung Choi ◽

Hyung Cheoul Shim ◽

Seung-Mo Lee ◽

Sohee Jeong ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Quantum Dot ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition ◽

Deposition Effect ◽

Pbs Quantum Dot

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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4720940 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104112 ◽

Author(s):

G. W. Paterson ◽

S. J. Bentley ◽

M. C. Holland ◽

I. G. Thayne ◽

J. Ahn ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Layer Deposition

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Gate hysteresis originating from atomic layer deposition of Al2 O3 onto suspended carbon nanotube field-effect transistors

physica status solidi (b) ◽

10.1002/pssb.201100088 ◽

2011 ◽

Vol 248 (11) ◽

pp. 2664-2667 ◽

Author(s):

Matthias Muoth ◽

Valentin Döring ◽

Christofer Hierold

Keyword(s):

Carbon Nanotube ◽

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition

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High mobility transparent conductive Al-doped ZnO thin films by atomic layer deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.08.207 ◽

2017 ◽

Vol 727 ◽

pp. 565-571 ◽

Author(s):

Man-Ling Lin ◽

Jheng-Ming Huang ◽

Ching-Shun Ku ◽

Chih-Ming Lin ◽

Hsin-Yi Lee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

High Mobility ◽

Atomic Layer ◽

Zno Thin Films ◽

Layer Deposition ◽

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Atomic Layer Deposition of SiO2for the Performance Enhancement of Fin Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.116503 ◽

2013 ◽

Vol 52 (11R) ◽

pp. 116503 ◽

Author(s):

Kazuhiko Endo ◽

Yuki Ishikawa ◽

Takashi Matsukawa ◽

Yongxun Liu ◽

Shin-ichi O'uchi ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition

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