Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Download Full-text

Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

Download Full-text

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Download Full-text