Multi‐State Heterojunction Transistors Based on Field‐Effect Tunneling–Transport Transitions

2021 ◽  
pp. 2101243
Author(s):  
Dong Un Lim ◽  
Sae Byeok Jo ◽  
Joohoon Kang ◽  
Jeong Ho Cho
Keyword(s):  
Field Effect ◽  
Tunneling Transport ◽  
Heterojunction Transistors

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

2015 ◽  
Vol 106 (8) ◽  
pp. 083501 ◽  
Author(s):  
Takahiro Mori ◽  
Yukinori Morita ◽  
Noriyuki Miyata ◽  
Shinji Migita ◽  
Koichi Fukuda ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Transport

scholarly journals Thermionic and tunneling transport mechanisms in graphene field-effect transistors

2008 ◽  
Vol 205 (7) ◽  
pp. 1527-1533 ◽  
Author(s):  
Victor Ryzhii ◽  
Maxim Ryzhii ◽  
Taiichi Otsuji
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Transport Mechanisms ◽  
Tunneling Transport

CHARGE CENTROID DETERMINATION IN FIELD-EFFECT EXPERIMENTS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-503-C4-506
Author(s):  
S. D. Senturia ◽  
J. Rubinstein ◽  
S. J. Azoury ◽  
D. Adler
Keyword(s):  
Field Effect

The Model for Calculation the Hall Effect Parameter

2004 ◽  
Vol 9 (2) ◽  
pp. 129-138
Author(s):  
J. Kleiza ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Mapping Method ◽  
Sample Thickness ◽  
System Of Nonlinear Equations ◽  
Specific Resistivity ◽  
Conformal Mapping Method ◽  
Effect Parameter ◽  
The Magnetic Field

A method for calculating the values of specific resistivity ρ as well as the product µHB of the Hall mobility and magnetic induction on a conductive sample of an arbitrary geometric configuration with two arbitrary fitted current electrodes of nonzero length and has been proposed an grounded. During the experiment, under the constant value U of voltage and in the absence of the magnetic field effect (B = 0) on the sample, the current intensities I(0), IE(0) are measured as well as the mentioned parameters under the effect of magnetic fields B1, B2 (B1 ≠ B2), i.e.: IE(β(i)), I(β(i)), i = 1, 2. It has been proved that under the constant difference of potentials U and sample thickness d, the parameters I(0), IE(0) and IE(β(i)), I(β(i)), i = 1, 2 uniquely determines the values of the product µHB and specific resistivity ρ of the sample. Basing on the conformal mapping method and Hall’s tensor properties, a relation (a system of nonlinear equations) between the above mentioned quantities has been found.

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