Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide

2016 ◽  
Vol 4 (46) ◽  
pp. 10935-10944 ◽  
Author(s):  
Shawn Sanctis ◽  
Rudolf C. Hoffmann ◽  
Ruben Precht ◽  
Wolfgang Anwand ◽  
Jörg J. Schneider
Keyword(s):  
Zinc Oxide ◽  
Metal Oxide ◽  
Positron Annihilation ◽  
Emission Spectroscopy ◽  
Positron Annihilation Spectroscopy ◽  
Temperature Dependent ◽  
Photoelectron Emission ◽  
Solution Processed ◽  
Indium Zinc Oxide ◽  
Molecular Precursor

Photoelectron emission spectroscopy and positron annihilation spectroscopy allow a comprehensive interpretation of the performance of IZO-based TFTs.

Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors

2008 ◽  
Vol 11 (1) ◽  
pp. H7 ◽  
Author(s):  
Chaun Gi Choi ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Indium Zinc Oxide
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