Chemical Vapor Deposition: An Eco‐Friendly, CMOS‐Compatible Transfer Process for Large‐Scale CVD‐Graphene (Adv. Mater. Interfaces 13/2019)

Chemical vapor deposition of graphene on transition metals is the most favored method to get large scale homogenous graphene films to date. However, this method involves a very critical step of transferring as grown graphene to desired substrates. A sacrificial polymer film is used to provide mechanical and structural support to graphene, as it is detached from underlying metal substrate, but, the residue and cracks of the polymer film after the transfer process affects the properties of the graphene. Herein, a simple mixture of polystyrene and low weight plasticizing molecules is reported as a suitable candidate to be used as polymer support layer for transfer of graphene synthesized by chemical vapor deposition (CVD). This combination primarily improves the flexibility of the polystyrene to prevent cracking during the transfer process. In addition, the polymer removal solvent can easily penetrate between the softener molecules, so that the polymer film can be easily dissolved after transfer of graphene, thereby leaving no residue. This facile method can be used freely for the large-scale transfer of 2D materials.

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CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽

10.1021/nn202012m ◽

2011 ◽

Vol 5 (9) ◽

pp. 7198-7204 ◽

Cited By ~ 82

Author(s):

Michael E. Ramón ◽

Aparna Gupta ◽

Chris Corbet ◽

Domingo A. Ferrer ◽

Hema C. P. Movva ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Mobility ◽

Chemical Vapor ◽

Large Area ◽

Cobalt Thin Films ◽

Cmos Compatible

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Structure Controlled Synthesis of Vertically Aligned Carbon Nanotubes Using Thermal Chemical Vapor Deposition Process

Journal of Heat Transfer ◽

10.1115/1.4002443 ◽

2010 ◽

Vol 133 (3) ◽

Cited By ~ 12

Author(s):

Myung Gwan Hahm ◽

Young-Kyun Kwon ◽

Ahmed Busnaina ◽

Yung Joon Jung

Keyword(s):

Carbon Nanotubes ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Large Scale ◽

Chemical Vapor ◽

Controlled Synthesis ◽

Full Potential ◽

Thermal Chemical Vapor Deposition ◽

Vertically Aligned ◽

Walled Carbon Nanotubes

Due to their unique one-dimensional nanostructure along with excellent mechanical, electrical, and optical properties, carbon nanotubes (CNTs) become a promising material for diverse nanotechnology applications. However, large-scale and structure controlled synthesis of CNTs still have many difficulties due to the lack of understanding of the fundamental growth mechanism of CNTs, as well as the difficulty of controlling atomic-scale physical and chemical reactions during the nanotube growth process. Especially, controlling the number of graphene wall, diameter, and chirality of CNTs are the most important issues that need to be solved to harness the full potential of CNTs. Here we report the large-scale selective synthesis of vertically aligned single walled carbon nanotubes (SWNTs) and double walled carbon nanotubes (DWNTs) by controlling the size of catalyst nanoparticles in the highly effective oxygen assisted thermal chemical vapor deposition (CVD) process. We also demonstrate a simple but powerful strategy for synthesizing ultrahigh density and diameter selected vertically aligned SWNTs through the precise control of carbon flow during a thermal CVD process.

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A Novel Latching Relay Fabricated Using an Oxide Molded Tungsten Process

MRS Proceedings ◽

10.1557/proc-872-j11.6 ◽

2005 ◽

Vol 872 ◽

Author(s):

J.G. Fleming ◽

Michael Baker ◽

David Luck

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Tensile Stress ◽

Vapor Deposition ◽

Chemical Mechanical Polishing ◽

Chemical Vapor ◽

Metal Contacts ◽

Cmos Compatible ◽

Mems Device ◽

Very High

AbstractIn this paper we describe an oxide molded tungsten process applied to the fabrication of a novel latching relay. The steps in the process are: deposition of a sacrificial oxide, patterning of the oxide, filling of the resulting mold with a blanket film of tungsten using chemical vapor deposition (CVD), and then the removal and planarization of excess tungsten through chemical mechanical polishing (CMP). The process for the incorporation of dielectric isolation has also been developed. The resulting tungsten structures are under high tensile stress, which appears to be compensated in process by the compressive stress of the oxide mold. All the steps are low temperature and the entire process is backend CMOS compatible. This process has been used to fabricate a latching relay which relies on the internal stress of the tungsten and always generates force in a pulling mode. Parts have been successfully fabricated and tested, the devices generate very high forces for a MEMS device and give reasonable contact resistances even without noble metal contacts.

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