Large scale structures in chemical vapor deposition-grown graphene on Ni thin films

AbstractAn aluminum thin film for ultra large scale integrated circuits(ULSI) metalization has been formed by PACVD using DMEAA(Dimethylethylamine alane) as a precursor. The selectivity was lost but the conformal step coverage was still maintained when the hydrogen plasma was added to conventional CVD process so that perfectly planarized metalization could be obtained.Comparing to thermal CVD, the reflectivity as well as the resistivity could be much improved especially when the film was deposited on SiO2. The deposition rate and the resistivity of PACVD Al thin films deposited on various substrates such as Si, TiN and SiO2 were compared with those of thermal CVD Al thin films.

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Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1)

MRS Advances ◽

10.1557/adv.2016.369 ◽

2016 ◽

Vol 1 (55) ◽

pp. 3667-3672 ◽

Cited By ~ 5

Author(s):

D. Convertino ◽

A. Rossi ◽

V. Miseikis ◽

V. Piazza ◽

C. Coletti

Keyword(s):

Thermal Decomposition ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Large Scale ◽

Chemical Vapor ◽

Layer Growth ◽

Force Microscopy ◽

Layer Graphene ◽

Atomic Force ◽

Grown Graphene

ABSTRACTThis work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene.

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Low Temperature Thermal Chemical Vapor Deposition of Silicon Nitride Thin Films for Microelectronics Applications

MRS Proceedings ◽

10.1557/proc-606-109 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 1

Author(s):

Spyridon Skordas ◽

George Sirinakis ◽

Wen Yu ◽

Di Wu ◽

Haralabos Efstathiadis ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Low Temperature ◽

Vapor Deposition ◽

Large Scale ◽

Chemical Vapor ◽

Nuclear Reaction Analysis ◽

Thermal Chemical Vapor Deposition ◽

Deposition Parameters

AbstractSilicon nitride technology has been incorporated in ultra-large scale integration (ULSI) microchip fabrication, thin film transistors (TFT), solar cells, and many other applications in a rapidly expanding market. Nevertheless, silicon nitride technologies currently in use face considerable limitations. Low pressure chemical vapor deposition (LPCVD) occurs at relatively high temperature (>700 °C) and plasma enhanced chemical vapor deposition (PECVD), although occurring at temperatures below 300 °C, produces hydrogen-rich films and could be self-limiting in terms of conformality and damage to the devices due to ion bombardment. In the present work, successful low temperature thermal chemical vapor deposition (LTCVD) of silicon nitride is reported on 8” silicon wafers. The use of a halide-based silicon precursor, tetraiodosilane (SiI4) has led to the deposition of high quality silicon nitride thin films at temperatures as low as 300 °C.Characterization of resulting film properties has been performed to determine their dependence on deposition parameters by Auger Electron Spectroscopy (AES), Rutherford Backscattering Spectroscopy (RBS), Fourier Transform Infrared (FTIR), Nuclear Reaction Analysis (NRA), Ellipsometry, Capacitance-Voltage (C-V), and Current-Voltage (I-V) measurements.

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Large-scale chemical vapor deposition growth of highly crystalline MoS2 thin films on various substrates and their optoelectronic properties

Current Applied Physics ◽

10.1016/j.cap.2019.07.007 ◽

2019 ◽

Vol 19 (10) ◽

pp. 1127-1131 ◽

Cited By ~ 1

Author(s):

Van Tu Nguyen ◽

Seongju Ha ◽

Dong-Il Yeom ◽

Yeong Hwan Ahn ◽

Soonil Lee ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Large Scale ◽

Chemical Vapor ◽

Optoelectronic Properties ◽

Chemical Vapor Deposition Growth

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Plasticized Polystyrene by Addition of -Diene Based Molecules for Defect-Less CVD Graphene Transfer

Polymers ◽

10.3390/polym12081839 ◽

2020 ◽

Vol 12 (8) ◽

pp. 1839

Author(s):

Tuqeer Nasir ◽

Bum Jun Kim ◽

Muhammad Hassnain ◽

Sang Hoon Lee ◽

Byung Joo Jeong ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Polymer Film ◽

Transfer Process ◽

Vapor Deposition ◽

Large Scale ◽

Chemical Vapor ◽

Polymer Support ◽

Structural Support ◽

Low Weight ◽

Grown Graphene

Chemical vapor deposition of graphene on transition metals is the most favored method to get large scale homogenous graphene films to date. However, this method involves a very critical step of transferring as grown graphene to desired substrates. A sacrificial polymer film is used to provide mechanical and structural support to graphene, as it is detached from underlying metal substrate, but, the residue and cracks of the polymer film after the transfer process affects the properties of the graphene. Herein, a simple mixture of polystyrene and low weight plasticizing molecules is reported as a suitable candidate to be used as polymer support layer for transfer of graphene synthesized by chemical vapor deposition (CVD). This combination primarily improves the flexibility of the polystyrene to prevent cracking during the transfer process. In addition, the polymer removal solvent can easily penetrate between the softener molecules, so that the polymer film can be easily dissolved after transfer of graphene, thereby leaving no residue. This facile method can be used freely for the large-scale transfer of 2D materials.

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