Transparent, P‐channel CuISn Thin‐film Transistor with Field Effect Mobility of 45 cm 2 V –1 s –1 and Excellent Bias Stability

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

MRS Proceedings ◽

10.1557/proc-297-901 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 3

Author(s):

Byung Chul Ahn ◽

Jeong Hyun Kim ◽

Dong Gil Kim ◽

Byeong Yeon Moon ◽

Kwang Nam Kim ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Atmospheric Pressure ◽

Thin Film Transistors ◽

Field Effect ◽

Low Cost ◽

Thin Film Transistor ◽

Field Effect Mobility ◽

Silicon Thin Film ◽

Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

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Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

MRS Advances ◽

10.1557/adv.2018.311 ◽

2018 ◽

Vol 3 (27) ◽

pp. 1525-1533 ◽

Cited By ~ 1

Author(s):

Eleonora Macchia ◽

Alla Zak ◽

Rosaria Anna Picca ◽

Kyriaki Manoli ◽

Cinzia Di Franco ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Field Effect ◽

Thin Film Transistor ◽

Fold Increase ◽

Field Effect Mobility ◽

Figures Of Merit ◽

Electronic Channel ◽

Improved Performance ◽

P Type

ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

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Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization

MRS Proceedings ◽

10.1557/proc-685-d12.3.1 ◽

2001 ◽

Vol 685 ◽

Cited By ~ 1

Author(s):

Barry D. van Dijk ◽

Paul Ch. Van der Wilt ◽

G. J. Bertens ◽

Lis.K. Nanver ◽

Ryoichi Ishihara

Keyword(s):

Thin Film ◽

Chemical Mechanical Polishing ◽

Field Effect ◽

Thin Film Transistor ◽

Subthreshold Swing ◽

Filter Method ◽

Field Effect Mobility ◽

Laser Crystallization ◽

Excimer Laser Crystallization ◽

Grain Filters

AbstractThin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

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Amorphous Silicon Alloy Thin Film Transistor Operation With High Field Effect Mobility

10.1117/12.961070 ◽

1986 ◽

Author(s):

M. Shur ◽

C. Hyun ◽

M. Hack ◽

W. Czubatyj

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Field Effect ◽

High Field ◽

Thin Film Transistor ◽

Alloy Thin Film ◽

Field Effect Mobility ◽

Silicon Alloy

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Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor

Applied Physics Letters ◽

10.1063/1.2093940 ◽

2005 ◽

Vol 87 (15) ◽

pp. 152105 ◽

Cited By ~ 67

Author(s):

Yunseok Jang ◽

Do Hwan Kim ◽

Yeong Don Park ◽

Jeong Ho Cho ◽

Minkyu Hwang ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Field Effect ◽

Thin Film Transistor ◽

Field Effect Mobility

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Improved Thin Film Transistor (TFT) performance using fractionated Poly-3-hexylthiophene (P3HT)

MRS Proceedings ◽

10.1557/proc-708-bb10.56 ◽

2001 ◽

Vol 708 ◽

Cited By ~ 2

Author(s):

Munira Raja ◽

Giles Lloyd ◽

Naser Sedghi ◽

Rafaella di Lucrezia ◽

Simon J. Higgins ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

Schottky Diodes ◽

Thin Film Transistor ◽

Drift Mobility ◽

Process Conditions ◽

Field Effect Mobility ◽

Lower Field ◽

The Third ◽

Residual Catalyst

ABSTRACTBy using the Trznadel method, it has been possible to increase molecular weight, the regio-regularity, and probably to decrease the residual catalyst of poly-3-hexylthiophene thin films. The drift mobility of holes, normal to the surface of cast films, in air, has been found using Schottky diodes, and field-effect mobility has been measured with Thin-Film Transistors. Three types of film have been studied using the two methods of assessing mobility. The as-synthesised films are compared with those that have been fractionated. The third set of films involves doping with 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). The doped films show a field effect mobility of 0.2 cm2V-1s-1: all others being lower. Field effect mobility is approximately two orders of magnitude greater than that in the bulk normal to the plane of the film. Doping levels in the films are found to be similar, probably because of the process conditions.

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Effect Of O2 Plasma Exposure On The Performance Of Polycrystalline Silicon Thin Film Transistors

MRS Proceedings ◽

10.1557/proc-345-99 ◽

1994 ◽

Vol 345 ◽

Author(s):

Chul Ha Kim ◽

Il Lee ◽

Ki Soo Sohn ◽

Su Chul Chun ◽

Jin Jang

Keyword(s):

Thin Film ◽

Polycrystalline Silicon ◽

Field Effect ◽

Thin Film Transistor ◽

Field Effect Mobility ◽

Plasma Exposure ◽

Silicon Thin Film ◽

Current Ratio ◽

Si Thin Film ◽

O2 Plasma

AbstractWe have studied the effect of O2 plasma exposure on the performance of polycrystalline silicon (poly-Si) thin film transistor (TFTs). The field effect mobility is increased and the drain currents at negative gate voltages are reduced by O2 plasma exposure on the surface of the TFT. These improvements in the performance of the poly-Si TFTs are larger in offset structure compared to overlap one. We obtained the on/off current ratio of ∼ 108 after O2 plasma exposure for the poly-Si TFTs with 3 or 4 μm offset length.

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