Highly Stable All‐Inorganic Perovskite Quantum Dots Using a ZnX 2 ‐Trioctylphosphine‐Oxide: Application for High‐Performance Full‐Color Light‐Emitting Diode

2020 ◽  
Vol 8 (8) ◽  
pp. 1901897 ◽  
Author(s):  
Seungmin Baek ◽  
Seokwoo Kang ◽  
Chaeyeon Son ◽  
So Jeong Shin ◽  
Jong H. Kim ◽  
...  
Author(s):  
Chung-Ping Yu ◽  
Meng-Ting Chung ◽  
Tzu-Yu Chen ◽  
Yu-Ming Huang ◽  
Chung-Ping Huang ◽  
...  

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Lung-Chien Chen ◽  
Yi-Tsung Chang ◽  
Ching-Ho Tien ◽  
Yu-Chun Yeh ◽  
Zong-Liang Tseng ◽  
...  

AbstractThis work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35.


2018 ◽  
Vol 49 ◽  
pp. 267-270 ◽  
Author(s):  
CHIH-HAO LIN ◽  
CHUN-FU LEE ◽  
CHIEN-CHUNG LIN ◽  
CHEN-HSIEN CHU ◽  
CHIN-WEI SHER ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Fumiya Osawa ◽  
Kazuhiro Marumoto

Abstract Spin-states and charge-trappings in blue organic light-emitting diodes (OLEDs) are important issues for developing high-device-performance application such as full-color displays and white illumination. However, they have not yet been completely clarified because of the lack of a study from a microscopic viewpoint. Here, we report operando electron spin resonance (ESR) spectroscopy to investigate the spin-states and charge-trappings in organic semiconductor materials used for blue OLEDs such as a blue light-emitting material 1-bis(2-naphthyl)anthracene (ADN) using metal–insulator–semiconductor (MIS) diodes, hole or electron only devices, and blue OLEDs from the microscopic viewpoint. We have clarified spin-states of electrically accumulated holes and electrons and their charge-trappings in the MIS diodes at the molecular level by directly observing their electrically-induced ESR signals; the spin-states are well reproduced by density functional theory. In contrast to a green light-emitting material, the ADN radical anions largely accumulate in the film, which will cause the large degradation of the molecule and devices. The result will give deeper understanding of blue OLEDs and be useful for developing high-performance and durable devices.


2020 ◽  
Vol 41 (3) ◽  
pp. 233-240
Author(s):  
郭 洁 GUO Jie ◽  
陆 敏 LU Min ◽  
孙思琪 SUN Si-qi ◽  
胡 强 HU Qiang ◽  
张 佳 ZHANG Jia ◽  
...  

2020 ◽  
Vol 59 (49) ◽  
pp. 22230-22237 ◽  
Author(s):  
Junwei Shi ◽  
Fangchao Li ◽  
Yan Jin ◽  
Cheng Liu ◽  
Ben Cohen‐Kleinstein ◽  
...  

2017 ◽  
Vol 6 (2) ◽  
pp. 1700897 ◽  
Author(s):  
Jingjing Liu ◽  
Xuexi Sheng ◽  
Yangqing Wu ◽  
Dongke Li ◽  
Jianchun Bao ◽  
...  

2021 ◽  
Author(s):  
Danyang Li ◽  
Junjie Wang ◽  
Miaozi Li ◽  
Biao Guo ◽  
Lan Mu ◽  
...  

2021 ◽  
Author(s):  
Lung-Chien Chen ◽  
Yen-Hung Tien ◽  
Jianjun Tian

Abstract In this work, trioctylphosphine oxide (TOPO) ligand is employed to improve the quality of CsPbBr1.2I1.8 quantum dots (QDs) films. Lead nitrate (Pb(NO3)2) is also used to passivate the surface of the films. The study of ligand and surface passivation on the luminous efficiency of red light-emitting diode (LED) is discussed. The CsPbBr1.2I1.8 QDs films co-doped with TOPO and Pb(NO3)2 can effectively improve the performance of the CsPbBr1.2I1.8 QDs LEDs due to reduction of non-radiation recombination of the carriers and smooth morphology in the active layer, thus improving the injection and transportation capabilities of carriers. As a result, the highest luminosity and current efficiency are 502.7 cd/m2 and 0.175 cd/A, respectively.


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