scholarly journals Organic Photodetectors: Vacuum‐Processed Small Molecule Organic Photodetectors with Low Dark Current Density and Strong Response to Near‐Infrared Wavelength (Advanced Optical Materials 17/2020)

2020 ◽  
Vol 8 (17) ◽  
pp. 2070068
Author(s):  
Chih‐Chien Lee ◽  
Richie Estrada ◽  
Ya‐Ze Li ◽  
Sajal Biring ◽  
Nurul Ridho Al Amin ◽  
...  
Keyword(s):  
Small Molecule ◽  
Current Density ◽  
Dark Current ◽  
Optical Materials ◽  
Near Infrared ◽  
Dark Current Density ◽  
Strong Response ◽  
Infrared Wavelength ◽  
Organic Photodetectors

Vacuum‐Processed Small Molecule Organic Photodetectors with Low Dark Current Density and Strong Response to Near‐Infrared Wavelength

2020 ◽  
Vol 8 (17) ◽  
pp. 2000519 ◽  
Author(s):  
Chih‐Chien Lee ◽  
Richie Estrada ◽  
Ya‐Ze Li ◽  
Sajal Biring ◽  
Nurul Ridho Al Amin ◽  
...  
Keyword(s):  
Small Molecule ◽  
Current Density ◽  
Dark Current ◽  
Near Infrared ◽  
Dark Current Density ◽  
Strong Response ◽  
Infrared Wavelength ◽  
Organic Photodetectors

High-detectivity organic photodetectors based on a thick-film photoactive layer using a conjugated polymer containing a naphtho[1,2-c:5,6-c]bis[1,2,5]thiadiazole unit

2019 ◽  
Vol 7 (20) ◽  
pp. 6070-6076 ◽  
Author(s):  
Zhaomiyi Zeng ◽  
Zhiming Zhong ◽  
Wenkai Zhong ◽  
Jiaxin Zhang ◽  
Lei Ying ◽  
...  
Keyword(s):  
Thick Film ◽  
Layer Thickness ◽  
Current Density ◽  
Dark Current ◽  
Conjugated Polymer ◽  
Dark Current Density ◽  
Photoactive Layer ◽  
Organic Photodetectors

The detectivity of organic photodetectors obviously enhanced with a photoactive layer thickness as a result of the reduced dark current density.

Interfacial thermal charge generation in near-infrared perovskite photodiodes as the origin of dark current density

2021 ◽  
Author(s):  
Rene Janssen ◽  
Riccardo Ollearo ◽  
Junke Wang ◽  
Matthew Dyson ◽  
Christ Weijtens ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Near Infrared ◽  
Dark Current Density ◽  
Charge Generation

Short-wave infrared detector with double barrier structure and low dark current density

2016 ◽  
Vol 14 (2) ◽  
pp. 022501-22505
Author(s):  
Yu Dong Yu Dong ◽  
Guanglong Wang Guanglong Wang ◽  
Haiqiao Ni Haiqiao Ni ◽  
Kangming Pei Kangming Pei ◽  
Zhongtao Qiao Zhongtao Qiao ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Infrared Detector ◽  
Short Wave ◽  
Barrier Structure ◽  
Dark Current Density ◽  
Double Barrier ◽  
Short Wave Infrared ◽  
Double Barrier Structure

scholarly journals Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 76
Author(s):  
U. Zavala-Moran ◽  
M. Bouschet ◽  
J. Perez ◽  
R. Alchaar ◽  
S. Bernhardt ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Spectral Response ◽  
Minority Carrier Lifetime ◽  
Peak Position ◽  
Type Ii ◽  
Dark Current Density ◽  
Time Resolved ◽  
Midwave Infrared ◽  
Electrical Characterizations

In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10−5 A/cm2 at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes.

scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

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