Phase and Polarization Modulations Using Radiation‐Type Metasurfaces

2021 ◽  
pp. 2100159
Author(s):  
Peng Xu ◽  
Han Wei Tian ◽  
Wei Xiang Jiang ◽  
Zhen Zhong Chen ◽  
Tun Cao ◽  
...  
Keyword(s):  
Radiation Type

scholarly journals UV/Vis-Based Persulphate Activation for p-Nitrophenol Degradation

Catalysts ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 480
Author(s):  
Valentin Dubois ◽  
Carmen S. D. Rodrigues ◽  
Ana S. P. Alves ◽  
Luis M. Madeira
Keyword(s):  
Reaction Time ◽  
Oxidation Process ◽  
Activation Process ◽  
Direct Photolysis ◽  
Simulated Solar Light ◽  
Uv Visible ◽  
Oxidation Efficiency ◽  
Nitrophenol Degradation ◽  
Persulphate Oxidation ◽  
Radiation Type

In the present work, the degradation of p-nitrophenol (PNP) and its mineralization by a UV/Vis-based persulphate activation process was investigated. Firstly, a screening of processes as direct photolysis, persulphate alone and persulphate activated by radiation was performed. The incidence of radiation demonstrated to have an important role in the oxidant activation, allowing to achieve the highest PNP and total organic carbon (TOC) removals. The maximum PNP oxidation (100%) and mineralization (61.6%)—both after 2 h of reaction time—were reached when using T = 70 °C, (S2O82−) = 6.4 g/L and I = 500 W/m2. The influence of radiation type (ultraviolet/visible, visible or simulated solar light) was also evaluated, being found that the source with the highest emission of ultraviolet radiation (UV/visible) allowed to achieve the best oxidation efficiency; however, solar radiation also reached very-good performance. According to quenching experiments, the sulphate radical is key in the activated persulphate oxidation process, but the hydroxyl radical also plays an important role.

scholarly journals On the linear stability of compressible plane Couette flow

1994 ◽  
Vol 258 ◽  
pp. 131-165 ◽  
Author(s):  
Peter W. Duck ◽  
Gordon Erlebacher ◽  
M. Yousuff Hussaini
Keyword(s):  
Linear Stability ◽  
Couette Flow ◽  
Small Amplitude ◽  
Reynolds Numbers ◽  
Inviscid Limit ◽  
Plane Couette Flow ◽  
Moving Wall ◽  
Type Boundary ◽  
The Stability ◽  
Radiation Type

The linear stability of compressible plane Couette flow is investigated. The appropriate basic velocity and temperature distributions are perturbed by a small-amplitude normal-mode disturbance. The full small-amplitude disturbance equations are solved numerically at finite Reynolds numbers, and the inviscid limit of these equations is then investigated in some detail. It is found that instabilities can occur, although the corresponding growth rates are often quite small; the stability characteristics of the flow are quite different from unbounded flows. The effects of viscosity are also calculated, asymptotically, and shown to have a stabilizing role in all the cases investigated. Exceptional regimes to the problem occur when the wave speed of the disturbances approaches the velocity of either of the walls, and these regimes are also analysed in some detail. Finally, the effect of imposing radiation-type boundary conditions on the upper (moving) wall (in place of impermeability) is investigated, and shown to yield results common to both bounded and unbounded flows.

TCAD Modeling of Nanoscale Bulk FinFET Structures with Account of Radiation Exposure

2021 ◽  
Vol 26 (5) ◽  
pp. 374-386
Author(s):  
K.O. Petrosyants ◽  
◽  
D.S. Silkin ◽  
D.A. Popov ◽  
Bo Li ◽  
...  
Keyword(s):  
Dose Range ◽  
Channel Length ◽  
Bulk Silicon ◽  
Test Set ◽  
Topological Parameters ◽  
Basic Model ◽  
Effective Mobility ◽  
Before And After ◽  
Semi Empirical ◽  
Radiation Type

Transition from planar MOSFET structures to FinFET 3D structures ensures various radiation type resistance. However, the characteristics of radiation-exposed devices made at different factories vary considerably and it is hard to explain FinFET structures’ radiation resistance dependence on variations of their physical and topological parameters and electrical modes. In this work, a RAD-TCAD model of FinFET on bulk silicon was developed. Additional semi-empirical radiation dependences specific to FinFET structures were introduced into the basic model of a nanometer MOSFET: the charge carrier effective mobility, the traps concentration in the SiO2 and HfO2 oxides and at the Si / SiO2 interface. The model was implemented in the Sen-taurus Synopsys TCAD environment. The model was validated on a test set of FinFET structures with a channel length from 60 nm to 7 nm before and after exposure to gamma irradiation in the dose range up to 1 Mrad. Comparison of the modeled and experimental I-V characteristics has shown an error of no more than 15 %.

Effects of Pressure Ports Layout on Angle of Attack and Sideslip Estimation in the Flush Air Data System

2011 ◽  
Vol 383-390 ◽  
pp. 2996-3000
Author(s):  
Fu Li ◽  
Zhen Luo
Keyword(s):  
Least Squares ◽  
Angle Of Attack ◽  
Inertial Navigation ◽  
Nonlinear Least Squares ◽  
High Accuracy ◽  
Data System ◽  
Evaluation Function ◽  
Theory Evaluation ◽  
Sideslip Estimation ◽  
Radiation Type

Flush air data system (FADS) have been successfully used on the nose tip of large manned/unmanned air vehicles instead of a traditional noseboom air data system. In order to integrate FADS with strapdown inertial navigation, high accuracy of angle of attack and sideslip is required. The estimated accuracy of angle of attack and sideslip in three types of FADS, which have different pressure ports layout, is compared using the nonlinear least squares theory. Evaluation function is provided to evaluate the accuracy of angle of attack and sideslip in different pressure ports layout. The results show that more sensors and radiation-type can provide high accuracy.

Radiative effects for some bidimensional thermoelectric problems

2016 ◽  
Vol 5 (4) ◽  
Author(s):  
Luisa Consiglieri
Keyword(s):  
Steady State ◽  
Weak Solutions ◽  
Elliptic Equations ◽  
Sufficient Conditions ◽  
Coupled System ◽  
Divergence Form ◽  
Radiative Effects ◽  
Existence Of Weak Solutions ◽  
Nonlinear Radiation ◽  
Radiation Type

AbstractThere are two main objectives in this paper. One is to find sufficient conditions to ensure the existence of weak solutions for some bidimensional thermoelectric problems. At the steady-state, these problems consist of a coupled system of elliptic equations of the divergence form, commonly accomplished with nonlinear radiation-type conditions on at least a nonempty part of the boundary of a

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