Band gap engineering of amorphous silicon quantum dots for light-emitting diodes

2001 ◽  
Vol 78 (17) ◽  
pp. 2575-2577 ◽  
Author(s):  
Nae-Man Park ◽  
Tae-Soo Kim ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Band Gap Engineering ◽  
Light Emitting

scholarly journals Quantum Dots and Applications

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 897
Author(s):  
Chang-Yeol Han ◽  
Hyun-Sik Kim ◽  
Heesun Yang
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Photovoltaic Cells ◽  
Core Shell ◽  
Special Issue ◽  
High Quality ◽  
Light Emitting ◽  
Size Dependent

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.

Light-emitting diodes based on colloidal silicon quantum dots

2018 ◽  
Vol 39 (6) ◽  
pp. 061008 ◽  
Author(s):  
Shuangyi Zhao ◽  
Xiangkai Liu ◽  
Xiaodong Pi ◽  
Deren Yang
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting

Efficient silicon quantum dots light emitting diodes with an inverted device structure

2016 ◽  
Vol 4 (4) ◽  
pp. 673-677 ◽  
Author(s):  
Li Yao ◽  
Ting Yu ◽  
Lixiang Ba ◽  
Hu Meng ◽  
Xin Fang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Average Diameter ◽  
Device Structure ◽  
Silicon Quantum Dots ◽  
Inverted Structure ◽  
Light Emitting ◽  
Structure Light ◽  
Inverted Device

SiQDs with an average diameter of 2.6 ± 0.5 nm are used as the light emitting material in high-efficiency inverted structure light emitting diodes.

Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DG11 ◽  
Author(s):  
Tae-Youb Kim ◽  
Nae-Man Park ◽  
Cheol-Jong Choi ◽  
Chul Huh ◽  
Chang-Geun Ahn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electrical Characteristic ◽  
Light Emitting Diodes ◽  
Barrier Width ◽  
Tunneling Barrier ◽  
Silicon Quantum Dots ◽  
Light Emitting

Silicon Quantum Dots for Light-Emitting Diodes Extending to the NIR-II Window

2021 ◽  
Author(s):  
Junpei Watanabe ◽  
Hiroyuki Yamada ◽  
Hong-Tao Sun ◽  
Taku Moronaga ◽  
Yasushi Ishii ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting

Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes

2011 ◽  
Vol 50 (4) ◽  
pp. 04DG11 ◽  
Author(s):  
Tae-Youb Kim ◽  
Nae-Man Park ◽  
Cheol-Jong Choi ◽  
Chul Huh ◽  
Chang-Geun Ahn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electrical Characteristic ◽  
Light Emitting Diodes ◽  
Barrier Width ◽  
Tunneling Barrier ◽  
Silicon Quantum Dots ◽  
Light Emitting

Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride

2000 ◽  
Vol 638 ◽  
Author(s):  
Nae-Man Park ◽  
Tae-Soo Kim ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Full Color ◽  
Mean Size

AbstractAmorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence were observed from the a-Si QD strictures by controlling the fot size. An organe light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on vottage was less than 5 V. An external quantum effiency of 2×10−3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Physics and Device Structures of Highly Efficient Silicon Quantum Dots Based Silicon Nitride Light-Emitting Diodes

2006 ◽  
Vol 12 (6) ◽  
pp. 1545-1555 ◽  
Author(s):  
Gun Yong Sung ◽  
Nae-Man Park ◽  
Jae-Heon Shin ◽  
Kyung-Hyun Kim ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Highly Efficient ◽  
Device Structures
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