scholarly journals Nanoelectronic Devices: Microwave Admittance of Gold-Palladium Nanowires with Proximity-Induced Superconductivity (Adv. Electron. Mater. 6/2017)

2017 ◽  
Vol 3 (6) ◽  
Author(s):  
Russell E. Lake ◽  
Joonas Govenius ◽  
Roope Kokkoniemi ◽  
Kuan Yen Tan ◽  
Matti Partanen ◽  
...  
Keyword(s):  
Nanoelectronic Devices ◽  
Palladium Nanowires

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

The use of parameter optimization in the design of VLSI library cells and custom interfaces of nanoelectronic devices

2011 ◽  
Vol 40 (7) ◽  
pp. 473-475
Author(s):  
V. N. Perminov ◽  
S. V. Makarov ◽  
S. A. Kokin ◽  
A. E. Veselov
Keyword(s):  
Parameter Optimization ◽  
Nanoelectronic Devices

Synthesis of Thin and Highly Conductive DNA-Based Palladium Nanowires

2008 ◽  
Vol 20 (6) ◽  
pp. 1099-1104 ◽  
Author(s):  
Khoa Nguyen ◽  
Miguel Monteverde ◽  
Arianna Filoramo ◽  
Laurence Goux-Capes ◽  
Sébastien Lyonnais ◽  
...  
Keyword(s):  
Palladium Nanowires
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