Laser Pump‐Probe Fiber‐Optic Technique for Characterization of Near‐Surface Layers of Solids: Development and Application Prospects for Studying Semiconductors and Weyl Semimetals

2020 ◽  
Vol 532 (8) ◽  
pp. 1900586
Author(s):  
Alexander A. Starostin ◽  
Victor V. Shangin ◽  
Alexander T. Lonchakov ◽  
Artem N. Kotov ◽  
Semyon B. Bobin
1991 ◽  
Vol 35 (B) ◽  
pp. 941-946 ◽  
Author(s):  
H. Schwenke ◽  
R. Gutschke ◽  
J. Knoth

AbstractTotal Reflection X-ray Fluorescence Spectrometry (TXRF) has been used for the characterisation of a 20 nm thick Ni/Fe/Cr-layer on a silicon substrate. Instrumental aspects of the technique as well as the data evaluation procedure on the basis of modelling calculations are outlined in this paper. The effect of standing waves is discussed by means of the selected example. This particular layer serves also as an illustration of the capabilities and limitations of TXRF. At least three surface parameters are covered by the technique, elemental composition, density and layer thickness.


Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.


1997 ◽  
Author(s):  
Robert P. Kenny ◽  
E. Gutierrez ◽  
Alfredo C. Lucia ◽  
Maurice P. Whelan ◽  
F. Gaiazzi

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Cheng-Cheng Zhang ◽  
Bin Shi ◽  
Song Zhang ◽  
Kai Gu ◽  
Su-Ping Liu ◽  
...  

AbstractVertical deformation profiles of subterranean geological formations are conventionally measured by borehole extensometry. Distributed strain sensing (DSS) paired with fiber-optic cables installed in the ground opens up possibilities for acquiring high-resolution static and quasistatic strain profiles of deforming strata, but it is currently limited by reduced data quality due to complicated patterns of interaction between the buried cables and their surroundings, especially in upper soil layers under low confining pressures. Extending recent DSS studies, we present an improved approach using microanchored fiber-optic cables—designed to optimize ground-to-cable coupling at the near surface—for strain determination along entire lengths of vertical boreholes. We proposed a novel criterion for soil–cable coupling evaluation based on the geotechnical bearing capacity theory. We applied this enhanced methodology to monitor groundwater-related vertical motions in both laboratory and field experiments. Corroborating extensometer recordings, acquired simultaneously, validated fiber optically determined displacements, suggesting microanchored DSS as an improved means for detecting and monitoring shallow subsurface strain profiles.


1981 ◽  
Vol 11 ◽  
Author(s):  
George G. Wicks ◽  
Barbara M. Robnett ◽  
W. Duncan Rankin

Leachability is one of the most important properties of solidified nuclear waste forms because it provides information on the performance and the subsequent safety and reliability that the waste products will possess. One of the most important experimental findings in the leachability field has been the discovery and subsequent detailed characterization of protective surface layers that form on waste glass during leaching. These layers can have a beneficial effect on product performance while in storage by improving productdurability with time. As a result of surface layer formation and the effects on subsequent product leaching characteristics, new qualitative and quantitative leaching models have recently been proposed.


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