Preparation of copper-indium sulfide thin films by single-source OMCVD: Mass-spectral investigation of decomposition path of the organometallic sources

1992 ◽  
Vol 6 (8) ◽  
pp. 685-691 ◽  
Author(s):  
Ry??ki Nomura ◽  
Yasuharu Seki ◽  
Kazuhisa Konishi ◽  
Haruo Matsuda
Keyword(s):  
Thin Films ◽  
Spectral Investigation ◽  
Indium Sulfide ◽  
Single Source ◽  
Mass Spectral ◽  
Copper Indium ◽  
Decomposition Path

ChemInform Abstract: Indium tert-Butylthiolates as Single Source Precursors for Indium Sulfide Thin Films: Is Molecular Design Enough?

ChemInform ◽  
2010 ◽  
Vol 24 (32) ◽  
pp. no-no
Author(s):  
A. N. MACINNES ◽  
M. B. POWER ◽  
A. F. HEPP ◽  
A. R. BARRON
Keyword(s):  
Thin Films ◽  
Molecular Design ◽  
Indium Sulfide ◽  
Single Source ◽  
Single Source Precursors

Preparation of Copper-Indium-Sulfide Thin Films by Solution Pyrolysis of Organometallic Sources

1988 ◽  
Vol 17 (11) ◽  
pp. 1849-1850 ◽  
Author(s):  
Ryoki Nomura ◽  
Kouichi Kanaya ◽  
Haruo Matsuda
Keyword(s):  
Thin Films ◽  
Indium Sulfide ◽  
Copper Indium

Indium tert-butylthiolates as single source precursors for indium sulfide thin films: Is molecular design enough?

1993 ◽  
Vol 449 (1-2) ◽  
pp. 95-104 ◽  
Author(s):  
Andrew N. MacInnes ◽  
Michael B. Power ◽  
Aloysius F. Hepp ◽  
Andrew R. Barron
Keyword(s):  
Thin Films ◽  
Molecular Design ◽  
Indium Sulfide ◽  
Single Source ◽  
Single Source Precursors

scholarly journals Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 484
Author(s):  
Matthias Schuster ◽  
Dominik Stapf ◽  
Tobias Osterrieder ◽  
Vincent Barthel ◽  
Peter J. Wellmann
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Coarse Grained ◽  
High Porosity ◽  
Low Band Gap ◽  
Seeding Layer ◽  
X Ray ◽  
Face To Face ◽  
Copper Indium ◽  
Vis Spectroscopy

Copper indium gallium sulfo-selenide (CIGS) based solar cells show the highest conversion efficiencies among all thin-film photovoltaic competition. However, the absorber material manufacturing is in most cases dependent on vacuum-technology like sputtering and evaporation, and the use of toxic and environmentally harmful substances like H2Se. In this work, the goal to fabricate dense, coarse grained CuInSe2 (CISe) thin-films with vacuum-free processing based on nanoparticle (NP) precursors was achieved. Bimetallic copper-indium, elemental selenium and binary selenide (Cu2−xSe and In2Se3) NPs were synthesized by wet-chemical methods and dispersed in nontoxic solvents. Layer-stacks from these inks were printed on molybdenum coated float-glass-substrates via doctor-blading. During the temperature treatment, a face-to-face technique and mechanically applied pressure were used to transform the precursor-stacks into dense CuInSe2 films. By combining liquid phase sintering and pressure sintering, and using a seeding layer later on, issues like high porosity, oxidation, or selenium- and indium-depletion were overcome. There was no need for external Se atmosphere or H2Se gas, as all of the Se was directly in the precursor and could not leave the face-to-face sandwich. All thin-films were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and UV/vis spectroscopy. Dense CISe layers with a thickness of about 2–3 µm and low band gap energies of 0.93–0.97 eV were formed in this work, which show potential to be used as a solar cell absorber.

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2.

ChemInform ◽  
2003 ◽  
Vol 34 (9) ◽  
Author(s):  
Oh-Shim Joo ◽  
Kwang-Deog Jung ◽  
Sung-Hoon Cho ◽  
Je-Hong Kyoung ◽  
Chang-Kyu Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Single Source ◽  
Single Source Precursor ◽  
New Type
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