MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2.

ChemInform ◽  
2003 ◽  
Vol 34 (9) ◽  
Author(s):  
Oh-Shim Joo ◽  
Kwang-Deog Jung ◽  
Sung-Hoon Cho ◽  
Je-Hong Kyoung ◽  
Chang-Kyu Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Single Source ◽  
Single Source Precursor ◽  
New Type

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2

2002 ◽  
Vol 8 (6) ◽  
pp. 273-276 ◽  
Author(s):  
O.-S. Joo ◽  
K.-D. Jung ◽  
S.-H. Cho ◽  
J.-H. Kyoung ◽  
C.-K. Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Single Source ◽  
Single Source Precursor ◽  
New Type

Preparation and properties of AlN (aluminum nitride) powder/thin films by single source precursor

2019 ◽  
Vol 43 (4) ◽  
pp. 1900-1909 ◽  
Author(s):  
Himanshi Chaurasia ◽  
Santosh K. Tripathi ◽  
Kamlesh Bilgaiyan ◽  
Akhilesh Pandey ◽  
K. Mukhopadhyay ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Inert Atmosphere ◽  
Inert Gases ◽  
Effect Of Temperature ◽  
Single Source ◽  
Nitride Powder ◽  
Single Source Precursor

The precursor hexa urea aluminate(iii) was pyrolysed at various temperature (800 °C to 1000 °C) and pressure (100 Torr to 1 Torr) under inert atmosphere to study the effect of temperature, pressure and inert gases for the conversion of precursor to AlN material/thin films.

A New Single Source Precursor Approach to Gallium and Aluminum Nitride

1995 ◽  
Vol 395 ◽  
Author(s):  
Deborah A. Neumayer ◽  
C.J. Carmalt ◽  
M.F. Arendt ◽  
J.M. White ◽  
A.H. Cowley ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Substrate Temperature ◽  
Film Growth ◽  
Single Source ◽  
Amorphous Thin Films ◽  
Single Source Precursor ◽  
Nitrogen Bonds ◽  
Gan Film

ABSTRACTSingle source precursors which contain preformed gallium-nitrogen and aluminum-nitrogen bonds are being considered for the growth of gallium and aluminum nitride because of their potential for overcoming problems associated with conventional precursors. Presented is the evaluation of dimethylgallium azide, Me2GaN3(1), bisdimethylamidogallium azide, (Me2N)2GaN3(2), and bisdimethylamidoaluminum azide, (Me2N)2AlN3(3) as potential precursors for A1N and GaN film growth. The compounds were evaluated for stability, ease of transport, temperature of decomposition and quality of film deposited. Amorphous thin films of GaN with a band gap of 3.4 eV were deposited with 2 at 250 °C. Increasing the substrate temperature to 580 °C resulted in the deposition of epitaxial GaN films. Polycrystalline A1N films were grown with 3 at 600 °C.

MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9154-9158 ◽  
Author(s):  
M. Lemberger ◽  
S. Thiemann ◽  
A. Baunemann ◽  
H. Parala ◽  
R.A. Fischer ◽  
...  
Keyword(s):  
Thin Films ◽  
Tantalum Nitride ◽  
Single Source ◽  
Metal Electrodes ◽  
Single Source Precursor

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

2005 ◽  
Vol 23 (6) ◽  
pp. 1619-1625 ◽  
Author(s):  
Sreenivas Jayaraman ◽  
Yu Yang ◽  
Do Young Kim ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Hafnium Diboride ◽  
Single Source Precursor

CVD of Zr0.65Ti0.35O2 Thin Films Using a Single-Source Precursor of Novel Anhydrous Mixed-Metal Nitrates

2006 ◽  
Vol 12 (7) ◽  
pp. 423-428 ◽  
Author(s):  
Q. Shao ◽  
A. Li ◽  
W. Zhang ◽  
D. Wu ◽  
Z. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Source ◽  
Mixed Metal ◽  
Metal Nitrates ◽  
Single Source Precursor
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