Effect of electrical properties on gas sensitivity of polypyrrole/cds nanocomposites

2015 ◽  
Vol 132 (32) ◽  
pp. n/a-n/a ◽  
Author(s):  
Bharati Yeole ◽  
Tanushree Sen ◽  
D. P. Hansora ◽  
Satyendra Mishra
Keyword(s):  
Electrical Properties ◽  
Gas Sensitivity ◽  
Cds Nanocomposites

Sub-Ppm Gas Sensitivity and Electrical Properties of Highly (100)-Oriented SnO2 Thin Film on Sapphire Substrate

2020 ◽  
Vol MA2020-01 (28) ◽  
pp. 2115-2115
Author(s):  
Ki Ando ◽  
Naoki Hukuda ◽  
Hiroyuki Shinoda ◽  
Nobuki Mutsukura
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Sapphire Substrate ◽  
Sno2 Thin Film ◽  
Gas Sensitivity

scholarly journals The Influence of Atmosphere on Electrical Property of Copper Oxide Nanoparticles

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Minghan Chen ◽  
Huichao Zhu ◽  
Xiaogan Li ◽  
Jun Yu ◽  
Haitao Cai ◽  
...  
Keyword(s):  
Electrical Property ◽  
Electrical Properties ◽  
Copper Oxide ◽  
Copper Oxide Nanoparticles ◽  
Water Bath ◽  
Oxide Nanoparticles ◽  
Electric Currents ◽  
Gas Sensitivity ◽  
Xrd And Tem ◽  
Insulating Substrates

In the present work the authors have fabricated copper oxide nanoparticles through a water bath method and investigated their composition and microstructure using XRD and TEM methods. Their electrical properties were investigated under different atmospheres and temperatures after painting them onto the insulating substrates with interdigital Pt and Au electrodes. The electric currents are found dramatically dependent on the variation of humidity, temperature, and ratio of oxygen to nitrogen. In the end, the HCHO gas sensitivity of these nanoparticles has been investigated.

Synthesis and electrical properties of PANI-CNT-CdS nanocomposites

2016 ◽  
Author(s):  
M. Goswami ◽  
A. Mukherjee ◽  
R. Ghosh ◽  
A. K. Meikap
Keyword(s):  
Electrical Properties ◽  
Cds Nanocomposites

BaZrO3Thin Films For Humidity Gas Sensor

2007 ◽  
Vol 1010 ◽  
Author(s):  
XiaoXin Chen ◽  
Michael Sorenson ◽  
Clayton Butler ◽  
Loren Rieth ◽  
Mark S. Miller ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Gas Sensor ◽  
Ionic Conduction ◽  
Gas Sensing ◽  
Gas Sensitivity ◽  
Structure And Morphology ◽  
Deposited Films

AbstractMicroscale (MEMS) gas sensing devices for power plant and automobile exhaust gas are being developed. Bulk BaZrO3 has been previously found to be sensitive to H2O at high temperatures, but was never studied in a thin film form. This research thrust focuses on undoped BaZrO3 and doped BaZrO3 with Y.Thin films were deposited on oxidized n-type silicon substrates at room temperature from ceramic targets with an Ar sputtering ambient. Various deposition pressures and deposition powers were used for the initial investigation. The structural and electrical properties of the deposited films were characterized to investigate their relationships to the deposition process parameters. X-ray diffraction (XRD) was used to measure the crystal structure of the deposited films, and in particular was used to determine if any crystallographic texture is present in the films. XRD results indicate the as-deposited films are amorphous before annealing. Films sputtered with and without oxygen in the ambient were compared. The crystal structure and morphology of BaZrO3 and BaZrO3 doped with Y after annealing were also determined. The materials changed from amorphous to crystalline after annealing at temperatures of 800 °C and 1000 °C for 3 hours in forming gas (2% H2 balanced with Ar gas) and oxygen. Temperature was found to dominate over deposition conditions in determining the final film structure. Atomic force microscopy was used to examine the morphology of the thin films. Gas sensor test structures using a Pt thin film metallization for interdigitated electrode structures were fabricated for gas sensing measurements. The experiments with the completed test structures measured the materials¡¦ resistivity as a function of temperature and gas concentration. Both materials decrease in resistance with increasing temperature, which is consistent with ionic conduction. Some experiments tested the gas sensitivity and selectivity of the films to the target gas H2O vapor (humidity) and possible cross sensitive gases H2 and CO2. Both materials need further development to evaluate their suitability for thin film sensors. First, the films were found to be highly resistive, making characterization of the electrical properties very difficult. Second, O2 ambient annealing gas will be applied to compare the crystal structure and morphology of both films with an Ar ambient annealing process.

Characterization and Electrical Properties of WO3 Sensing Thin Films

1996 ◽  
Vol 459 ◽  
Author(s):  
C. Cantalini ◽  
S. Di Nardo ◽  
L. Lozzi ◽  
M. Passacantando ◽  
M. Pelino ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electrical Response ◽  
Binding Energies ◽  
Gas Sensitivity ◽  
Force Microscopy ◽  
Dry Air ◽  
Atomic Force ◽  
Glancing Angle

ABSTRACTThe microstructure and the electrical properties of thermallyevaporated WO3 thin films have been investigated by glancing angle XRD, atomic force microscopy AFM, X-ray photoelectron spectroscopy XPS and dc techniques. Thin films of 1500 Å thickness have been obtained by evaporating high purity WO3 powders by an electricallyheated crucible at 5 × 10−4 Pa on sapphire substrates. Theas-deposited films have resulted to be amorphous. After annealing at 500°C in dry air for 6, 12 and 24 hours the films have shown well crystallized structures with preferential orientations of WO3 in the (200)direction. The increase of the annealing time has shown marked influence onthe microstructural features of the films surface, as highlighted by AFM investigations. The binding energies of W 4f7/2 have been close to that of WO3, the 24 h annealed yielded an O/W ratio close to 2.9 which is in good agreement with the theoretical one. The gas sensitivity, selectivity and stability of the annealed films in presence of NO2 gas (between 0.7 and 5 ppm) have been evaluated by measuring the electrical change of the film resistance in dry air and in gasatmosphere conditions. The influence of NO and Humidity interfering gases to the NO2 electrical response has been also evaluated. The 500 °C annealed at 24 h has shown better electrical properties in terms of NO2 sensitivity, stability and cross sensitivity effects.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Sign in / Sign up

Export Citation Format

Share Document