scholarly journals Cover Feature: Defect Engineering of Two‐Dimensional Molybdenum Disulfide (Chem. Eur. J. 29/2020)

2020 ◽  
Vol 26 (29) ◽  
pp. 6290-6290
Author(s):  
Xin Chen ◽  
Peter Denninger ◽  
Tanja Stimpel‐Lindner ◽  
Erdmann Spiecker ◽  
Georg S. Duesberg ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Two Dimensional ◽  
Defect Engineering

scholarly journals Defect Engineering of Two‐Dimensional Molybdenum Disulfide

2020 ◽  
Vol 26 (29) ◽  
pp. 6535-6544 ◽  
Author(s):  
Xin Chen ◽  
Peter Denninger ◽  
Tanja Stimpel‐Lindner ◽  
Erdmann Spiecker ◽  
Georg S. Duesberg ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Two Dimensional ◽  
Defect Engineering

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

Compressible and Flexible PPy@MoS2/C Microwave Absorption Foam with Strong Dielectric Polarization from 2D Semiconductor Intermediated Sandwich Structure

Nanoscale ◽  
2021 ◽  
Author(s):  
Ziqi Yang ◽  
Huiqiao Guo ◽  
Wenbin You ◽  
Zhengchen Wu ◽  
Liting Yang ◽  
...  
Keyword(s):  
Dielectric Property ◽  
Molybdenum Disulfide ◽  
Microwave Absorption ◽  
Sandwich Structure ◽  
Structural Engineering ◽  
Two Dimensional ◽  
Dielectric Polarization ◽  
2D Material ◽  
Major Trend

Structural engineering represents a major trend in two-dimensional (2D) material fields on microscopic interfacial electric/dielectric property and macroscopic device strategy. 2D Molybdenum disulfide (MoS2) with semiconductive feature and lamellar architecture...

Defect engineering of molybdenum disulfide for energy storage

2021 ◽  
Author(s):  
Zefang Yang ◽  
Lin Zhu ◽  
Chao-Nan Lv ◽  
Rui Zhang ◽  
Hai-Yan Wang ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Chemical Properties ◽  
High Energy ◽  
High Energy Density ◽  
Physical And Chemical Properties ◽  
Defect Engineering ◽  
Metal Chalcogenide ◽  
Layered Transition Metal ◽  
Physical And Chemical ◽  
And Chemical Properties

Molybdenum disulfide, a typically layered transition metal chalcogenide, is considered one of the promising electrode candidates for next-generation high energy density batteries owing to its tunable physical and chemical properties,...

Defect-Engineering-Enhanced Electrical Manipulation of Anisotropic Excitons in Two-Dimensional ReS2

2021 ◽  
pp. 101562
Author(s):  
Shuyi Wu ◽  
Wen Pan ◽  
Jinlei Zhang ◽  
Chunlan Ma ◽  
Yun Shan ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Defect Engineering ◽  
Electrical Manipulation

Large-scale fabrication of a flexible, highly conductive composite paper based on molybdenum disulfide–Pt nanoparticle–single-walled carbon nanotubes for efficient hydrogen production

2017 ◽  
Vol 53 (2) ◽  
pp. 380-383 ◽  
Author(s):  
I-Wen Peter Chen ◽  
Yu-Xiang Chen ◽  
Chien-Wei Wu ◽  
Chun-Chien Chiu ◽  
Yu-Chieh Hsieh
Keyword(s):  
Carbon Nanotubes ◽  
Hydrogen Production ◽  
Molybdenum Disulfide ◽  
Large Scale ◽  
Single Walled Carbon Nanotubes ◽  
Two Dimensional ◽  
Pt Nanoparticle ◽  
Two Dimensional Materials ◽  
Walled Carbon Nanotubes ◽  
Composite Paper

Creating efficient hydrogen production properties from the macroscopic assembly of two-dimensional materials is still an unaccomplished goal.

RECENT ADVANCES IN TWO-DIMENSIONAL PHOTONIC CRYSTALS SLAB STRUCTURE: DEFECT ENGINEERING AND HETEROSTRUCTURE

NANO ◽  
2007 ◽  
Vol 02 (01) ◽  
pp. 1-13 ◽  
Author(s):  
BONG-SHIK SONG ◽  
TAKASHI ASANO ◽  
SUSUMU NODA
Keyword(s):  
Photonic Crystals ◽  
Optical Sensors ◽  
Quantum Electrodynamics ◽  
Cavity Quantum Electrodynamics ◽  
Design Rule ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Nanophotonic Devices ◽  
Multiple Wavelength ◽  
Accelerate Development

This paper presents a review on the selected highlights of highly-functional devices in two-dimensional photonic crystals slab structure. By introducing artificial defects in the photonic crystals (that is, defect engineering), novel photonic devices of line-defect waveguides and point-defect nanocavity are demonstrated. For more efficient manipulation of photons, the fundamentals of heterostructure photonic crystals are also reviewed. Heterostructures consist of multiple photonic crystals with different lattice-constants and they provide further high-functionalities such as multiple wavelength operation while maintaining optimized performance and the enhancement of photon manipulation efficiency. Because of the importance of high quality (Q) nanocavity for realization of nanophotonic devices, we also review the design rule of high Q nanocavities and present recent experiments on nanocavities with Q factors in excess of one million (~ 1.2 × 106). The progress of defect engineering and heterostructure in two-dimensional photonic crystals slab structure will accelerate development in ultrasmall photonic chips, cavity quantum electrodynamics, optical sensors, etc.

scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Infrared Detector ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Electric Transport ◽  
Defect Engineering ◽  
Fast Switching ◽  
Metal Dichalcogenides ◽  
Poor Stability

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

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