Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor
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ABSTRACTDense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor, MeHSiCH2SiCH2Me(CH2SiMeH2). At deposition temperatures between 700 and 800° C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed.
1984 ◽
Vol 131
(11)
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pp. 2702-2708
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1991 ◽
Vol 38
(3)
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pp. 231-234
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2015 ◽
Vol 418
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pp. 52-56
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Keyword(s):
Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition
1996 ◽
Vol 169
(3)
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pp. 485-490
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2005 ◽
Vol 411
(1-3)
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pp. 198-202
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1990 ◽
2014 ◽
Vol 04
(04)
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pp. 389-395
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