Investigation of the Effect of Thermal Annealing on Poly(3-hexylthiophene) Nanofibers by Scanning Probe Microscopy: From Single-Chain Conformation and Assembly Behavior to the Interfacial Interactions with Graphene Oxide

ChemPhysChem ◽  
2016 ◽  
Vol 17 (20) ◽  
pp. 3315-3320 ◽  
Author(s):  
Sanrong Liu ◽  
Xiaojing Ma ◽  
Bo Wang ◽  
Xudong Shang ◽  
Wenliang Wang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Thermal Annealing ◽  
Scanning Probe Microscopy ◽  
Chain Conformation ◽  
Scanning Probe ◽  
Single Chain ◽  
Interfacial Interactions ◽  
Probe Microscopy ◽  
Assembly Behavior

Probing host-guest interactions in hydroxyapatite intercalated graphene oxide nanocomposite: NMR and scanning probe microscopy studies

2019 ◽  
Vol 732 ◽  
pp. 136636
Author(s):  
A. Rajesh ◽  
G. Mangamma ◽  
T.N. Sairam ◽  
S. Subramanian
Keyword(s):  
Graphene Oxide ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

scholarly journals Intrinsic structure and friction properties of graphene and graphene oxide nanosheets studied by scanning probe microscopy

2013 ◽  
Vol 36 (6) ◽  
pp. 1073-1077 ◽  
Author(s):  
YAN-HUAI DING ◽  
HU-MING REN ◽  
FEI-HU CHANG ◽  
PING ZHANG ◽  
YONG JIANG
Keyword(s):  
Graphene Oxide ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Graphene Oxide Nanosheets ◽  
Intrinsic Structure ◽  
Probe Microscopy

Electronic Transport and Doping Effects in Reduced Graphene Oxide Measured by Scanning Probe Microscopy

2013 ◽  
Vol 1505 ◽  
Author(s):  
Christopher E. Kehayias ◽  
Samuel MacNaughton ◽  
Sameer Sonkusale ◽  
Cristian Staii
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Chemical Doping ◽  
Electrode Arrays ◽  
Probe Microscopy ◽  
Reduced Graphene ◽  
Wide Range ◽  
Organic Dopants

ABSTRACTWe present a Scanning Probe Microscopy study of doping and sensing properties of reduced graphene oxide (rGO)-based nanosensors. rGO devices are created by dielectrophoretic assembly of rGO platelets onto interdigitated electrode arrays, which are lithographically pre-patterned on top of SiO2/Si wafers. The availability of several types of oxygen functional groups allows rGO to interact with a wide range of organic dopants, including methanol, ethanol, acetone, and ammonia. We perform sensitive Scanning Kelvin Probe Microscopy (SKPM) measurements on patterned rGO electronic circuits and show that the local electrical potential and charge distribution are significantly changed when the device is exposed to organic dopants. We also demonstrate that SKPM experiments allow us to quantify the amount of charge transferred to the sensor during chemical doping, and to spatially resolve the active sites of the sensor where the doping process takes place.

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Advances in Multimodal Scanning Probe Microscopy at the Nanoscale

2019 ◽  
Author(s):  
Rajiv Giridharagopal ◽  
David Ginger
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

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