Investigation of the Effect of Thermal Annealing on Poly(3-hexylthiophene) Nanofibers by Scanning Probe Microscopy: From Single-Chain Conformation and Assembly Behavior to the Interfacial Interactions with Graphene Oxide

ABSTRACTWe present a Scanning Probe Microscopy study of doping and sensing properties of reduced graphene oxide (rGO)-based nanosensors. rGO devices are created by dielectrophoretic assembly of rGO platelets onto interdigitated electrode arrays, which are lithographically pre-patterned on top of SiO2/Si wafers. The availability of several types of oxygen functional groups allows rGO to interact with a wide range of organic dopants, including methanol, ethanol, acetone, and ammonia. We perform sensitive Scanning Kelvin Probe Microscopy (SKPM) measurements on patterned rGO electronic circuits and show that the local electrical potential and charge distribution are significantly changed when the device is exposed to organic dopants. We also demonstrate that SKPM experiments allow us to quantify the amount of charge transferred to the sensor during chemical doping, and to spatially resolve the active sites of the sensor where the doping process takes place.

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The Role of Scanning Probe Microscopy in Drug Delivery Research

Critical Reviews in Therapeutic Drug Carrier Systems ◽

10.1615/critrevtherdrugcarriersyst.v13.i3-4.20 ◽

1996 ◽

Vol 13 (3-4) ◽

pp. 225-256 ◽

Cited By ~ 8

Author(s):

Kevin M. Shakesheff ◽

Martyn C. Davies ◽

Clive J. Roberts ◽

Saul J. B. Tendler ◽

Philip M. Williams

Keyword(s):

Drug Delivery ◽

Scanning Probe Microscopy ◽

Scanning Probe ◽

Probe Microscopy

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Advances in Multimodal Scanning Probe Microscopy at the Nanoscale

10.29363/nanoge.ngfm.2019.125 ◽

2019 ◽

Author(s):

Rajiv Giridharagopal ◽

David Ginger

Keyword(s):

Scanning Probe Microscopy ◽

Scanning Probe ◽

Probe Microscopy

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Combined scanning probe microscopy and electron microscopy study of microstructure evolution in copper processed by equal channel angular pressing

Zeitschrift für Metallkunde ◽

10.3139/146.030938 ◽

2003 ◽

Vol 94 (8) ◽

pp. 938-942 ◽

Cited By ~ 2

Author(s):

Eugen Rabkin ◽

David Gorni ◽

Itamar Gutman ◽

Eli Buchman ◽

Michael Kazakevich

Keyword(s):

Electron Microscopy ◽

Equal Channel Angular Pressing ◽

Microstructure Evolution ◽

Scanning Probe Microscopy ◽

Microscopy Study ◽

Electron Microscopy Study ◽

Scanning Probe ◽

Probe Microscopy ◽

Angular Pressing

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Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0082 ◽

2015 ◽

Author(s):

Benedict Drevniok ◽

St. John Dixon-Warren ◽

Oskar Amster ◽

Stuart L Friedman ◽

Yongliang Yang

Keyword(s):

Scanning Probe Microscopy ◽

Semiconductor Devices ◽

Cmos Image Sensor ◽

Image Sensor ◽

Scanning Probe ◽

Cross Sectional ◽

Probe Microscopy ◽

Dopant Profiling ◽

Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

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Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0519 ◽

2014 ◽

Author(s):

Swaminathan Subramanian ◽

Khiem Ly ◽

Tony Chrastecky

Keyword(s):

Sample Preparation ◽

Failure Analysis ◽

Cross Section ◽

Scanning Probe Microscopy ◽

Preparation Method ◽

Fault Isolation ◽

Scanning Probe ◽

Sample Preparation Method ◽

Probe Microscopy ◽

Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

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