Simulation approach of new photovoltaic structures based on epitaxial silicon thin layers on a monocrystalline silicon substrate

2021 ◽  
Author(s):  
Djamel Yesref ◽  
Ammaria Bensaoula
Keyword(s):  
Silicon Substrate ◽  
Monocrystalline Silicon ◽  
Thin Layers ◽  
Simulation Approach ◽  
Epitaxial Silicon

Plasma-Initiated Laser Deposition of Polycrystalline and Monocrystalline Silicon Films

1983 ◽  
Vol 29 ◽  
Author(s):  
J. M. Gee ◽  
P. J. Hargis ◽  
M. J. Carr ◽  
D. R. Tallant ◽  
R. W. Light
Keyword(s):  
Polycrystalline Silicon ◽  
Monocrystalline Silicon ◽  
Laser Deposition ◽  
Laser Raman Spectroscopy ◽  
Epitaxial Silicon ◽  
Laser Raman ◽  
Laser Fluences ◽  
Transmission Electron ◽  
Plasma Species ◽  
Deposited Film

ABSTRACTIn this paper we report a new method of silicon deposition using the interaction between the radiation from a pulsed-ultraviolet excimer laser and the plasma species produced in a glow discharge in silane (SiH4). Examination of the deposited film by laser Raman spectroscopy and by transmission electron microscopy revealed that the morphology ranged from polycrystalline silicon at laser fluences of 0.13–0.17 J/cm2 to epitaxial silicon at fluences of 0.4–0.6 J/cm2 . Growth rates of 100 nm/min for polycrystalline silicon and 30 nm/min for monocrystalline silicon were achieved.

Research on ultra-smooth machining technique for monocrystalline silicon substrate

2020 ◽  
Vol 67 (14) ◽  
pp. 1227-1232
Author(s):  
Zhe Wang ◽  
Lingqi Wu ◽  
Aihuan Dun ◽  
Yuanyuan Fang ◽  
Li Song ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Monocrystalline Silicon

scholarly journals Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

2016 ◽  
Vol 34 (3) ◽  
pp. 676-683 ◽  
Author(s):  
R. Skonieczny ◽  
P. Popielarski ◽  
W. Bała ◽  
K. Fabisiak ◽  
K. Paprocki ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Silicon Substrate ◽  
Thin Layers ◽  
Excitation Wavelength ◽  
Type Silicon ◽  
Atomic Force ◽  
Before And After ◽  
Evaporation Technique ◽  
Polarized Raman

AbstractThe cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

Pulsed Nd:YAG laser treatment of monocrystalline silicon substrate

2011 ◽  
Vol 56 (1-4) ◽  
pp. 223-231 ◽  
Author(s):  
Wen-Tse Hsiao ◽  
Shih-Feng Tseng ◽  
Kuo-Cheng Huang ◽  
Yan-Hsin Wang ◽  
Ming-Fei Chen
Keyword(s):  
Laser Treatment ◽  
Nd:Yag Laser ◽  
Silicon Substrate ◽  
Monocrystalline Silicon ◽  
Pulsed Nd:Yag Laser

Electrical Characteristics of Thermal Spray Silicon Coatings

2000 ◽  
Vol 624 ◽  
Author(s):  
S.Y. Tan ◽  
R.J. Gambino ◽  
R. Goswami ◽  
S. Sampath ◽  
H. Herman
Keyword(s):  
Silicon Substrate ◽  
Resistivity Measurement ◽  
Thermal Spraying ◽  
Monocrystalline Silicon ◽  
Vacuum Plasma Spray ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Band Bending ◽  
Van Der Pauw ◽  
Characteristic Pressure

ABSTRACTPolycrystalline silicon deposits were formed on a monocrystalline silicon substrate by thermal spraying. The resulting structure exhibits a device characteristic. Pressure-induced transformations of silicon, namely, Si-III (BC-8) and Si-IX are identified by X-ray diffraction in a Si-I matrix on deposits formed by vacuum plasma spray. The presence of the Si-III and Si-IX indicates that the pressure-quenched silicon deposit is highly conductive, as determined by four-point van der Pauw resistivity measurement. Hall mobility measurements, combined with photoconductivity results, indicate that the highly conductive silicon deposit displays the same range of mobility as a polycrystalline deposit containing only Si-I. The silicon deposit, with or without metastable phases, displays the same photoconductivity properties. The silicon deposit on a monocrystalline silicon substrate exhibits rectifying I–Vcharacteristics, possibly caused by band bending of trapping states associated with impurities segregating at the polycrystalline deposit/monocrystalline substrate interface

Silicon-Framed Tensile Specimens: Techniques and Results

1998 ◽  
Vol 518 ◽  
Author(s):  
D. T. Read
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Bulk Material ◽  
Speckle Pattern ◽  
Maximum Load ◽  
Tensile Tests ◽  
Tensile Specimen ◽  
Electronic Speckle Pattern Interferometry ◽  
Epitaxial Silicon ◽  
Young’S Moduli

AbstractThe silicon-framed tensile specimen design has been used in tensile tests of thin films of a variety of metals and epitaxial silicon. A piezo-actuated microtensile test device holds the specimen while the silicon frame is cut just before testing, imposes the tensile displacement, and provides voltages proportional to force and displacement. This technique is appropriate for films that are hundreds of micrometers long, tens to a few hundred micrometers wide, and from 0.3 to 15 micrometers thick. The specimen film must be amenable to lithographic patterning, must adhere well to the silicon substrate, and must resist a silicon etchant. The specimen fabrication is a bulk-micromachining process, because the silicon substrate is etched through underneath the specimen film. Uniaxial yield strength, ultimate tensile strength, and elongation to maximum load can be measured using the microtensile tester. The addition of laser illumination and digital photography allows implementation of electronic speckle pattern interferometry, for accurate measurement of local displacement. This addition allows evaluation of the tensile Young's modulus. Compared to bulk material, thin films of copper and aluminum have lower apparent Young's moduli, higher yield and ultimate tensile strengths because of their fine grain size, and lower elongation to failure. Correlation between properties measured by indentation and by tensile testing needs further study.

Structural and Chemical Characterization of Cerium Oxide Thin Layers Grown on Silicon Substrate

2015 ◽  
Vol 2 (1) ◽  
pp. 101-107 ◽  
Author(s):  
V. Potin ◽  
J. Lavkova ◽  
S. Bourgeois ◽  
M. Dubau ◽  
I. Matolinova ◽  
...  
Keyword(s):  
Cerium Oxide ◽  
Silicon Substrate ◽  
Chemical Characterization ◽  
Thin Layers

The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning

2007 ◽  
Vol 253 (20) ◽  
pp. 8389-8393 ◽  
Author(s):  
A. Aßmuth ◽  
T. Stimpel-Lindner ◽  
O. Senftleben ◽  
A. Bayerstadler ◽  
T. Sulima ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Atomic Hydrogen ◽  
Epitaxial Silicon ◽  
Substrate Cleaning

Temperature dependence of FT-IR absorption and Raman scattering of copper phthalocyanine thin layers deposited on silicon substrate

2006 ◽  
Vol 782 (2-3) ◽  
pp. 177-182 ◽  
Author(s):  
W. Bała ◽  
A. Grodzicki ◽  
P. Piszczek ◽  
M. Wojdyła ◽  
A. Bratkowski ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Silicon Substrate ◽  
Copper Phthalocyanine ◽  
Thin Layers ◽  
Ir Absorption ◽  
Ft Ir
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